Epitaxial Thin Film Growth and Device Development in Monocrystalline Alpha and Beta Silicon Carbide

1989 ◽  
Vol 162 ◽  
Author(s):  
Robert F. Davis ◽  
J. W. Palmour ◽  
J. A. Edmond
Keyword(s):  
Film Growth ◽  
Schottky Diodes ◽  
Leakage Currents ◽  
Device Development ◽  
Barrier Heights ◽  
Inversion Domain ◽  
Commercial Applications ◽  
Inversion Domain Boundaries ◽  
And Inversion ◽  
Sic Films

ABSTRACTHigh purity monocrystalline β-SiC films have been chemically vapor deposited on Si (100) and α-SiC (0001) by numerous groups around the world using SiH4 and C3H8 or C2H4 carried in H2. Films grown on nominal Si (100) contain substantial concentrations of dislocations, stacking faults and inversion domain boundaries; those deposited on α-SiC (0001) contain primarily double positioning boundaries. Both types of boundaries may be eliminated by using off-axis orientations of the respective substrates. However, the films grown on off-axis a substrates were the a(6H) polytype. Schottky diode, p-n junction, MESFET, MOSFET and HBT devices have been fabricated with encouraging results for future commercial applications. The barrier heights and ideality factors of Au Schottky diodes on β-SiC ranged from 0.9—1.15 eV and 1.2—1.6, respectively. However, the reverse leakage currents were much lower and the breakdown voltages considerably higher at all temperatures for the diodes on the α-SiC films. MESFETs fabricated using the diodes in the alpha films were superior to those in beta with the transconductance being more than 15 times greater in the former. Enhancement-and depletion-mode MOSFETs exhibited better behavior in terms of saturation, drain voltage and high temperature operation. All films produced on a-SiC substrates were superior to those produced in beta films grown on Si.

Schottky Diode Characteristics of CVD—Grown β —SiC Epitaxial Films on (n11) Silicon Substrates ( n= 1,3,4,5,6 ).

1988 ◽  
Vol 116 ◽  
Author(s):  
Yoshihisa Fujii ◽  
Atsuko Ogura ◽  
Katsuki Furukawa ◽  
Mitsuhiro Shigeta ◽  
Akira Suzuki ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Schottky Diodes ◽  
Epitaxial Films ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Leakage Currents ◽  
Substrate Orientation ◽  
Si Substrates ◽  
Barrier Heights ◽  
Sic Films

AbstractSchottky barrier contacts have been made on CVD—grown β - SiC on Si substrates, and their C—V and I—V characteristics are measured. Dependence of the Schottky characteristics on Si substrate orientation ((n11),(n=1,3,4,5,6), and (100)) is examined. The Schottky diodes of the β-SiC films on Si (611), Si(411), and Si (111) show excellent characteristics compared with the conventional Schottky diodes using Si(100) substrates. That is, reverse leakage currents are small, ideality factors are close to unity, and barrier heights are larger.

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

Interfacial steps, dislocations, and inversion domain boundaries in the GaN/AlN/Si (0001)/(111) epitaxial system

2005 ◽  
Vol 242 (8) ◽  
pp. 1617-1627 ◽  
Author(s):  
G. P. Dimitrakopulos ◽  
A. M. Sanchez ◽  
Ph. Komninou ◽  
Th. Kehagias ◽  
Th. Karakostas ◽  
...  
Keyword(s):  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries ◽  
And Inversion

scholarly journals Surface transformation and inversion domain boundaries in gallium nitride nanorods

2009 ◽  
Vol 95 (21) ◽  
pp. 211907 ◽  
Author(s):  
Pan Xiao ◽  
Xu Wang ◽  
Jun Wang ◽  
Fujiu Ke ◽  
Min Zhou ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Surface Transformation ◽  
Inversion Domain Boundaries ◽  
And Inversion

scholarly journals Inversion domain boundaries in wurtzite GaN

2021 ◽  
Vol 103 (16) ◽  
Author(s):  
M. M. F. Umar ◽  
Jorge O. Sofo
Keyword(s):  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111)

1988 ◽  
Vol 64 (8) ◽  
pp. 4082-4085 ◽  
Author(s):  
R. W. Fathauer ◽  
T. L. Lin ◽  
P. J. Grunthaner ◽  
P. O. Andersson ◽  
J. M. Iannelli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Barrier Heights ◽  
Effective Barrier

Junction lines of inversion domain boundaries with stacking faults in GaN

2004 ◽  
Vol 70 (11) ◽  
Author(s):  
J. Kioseoglou ◽  
G. P. Dimitrakopulos ◽  
Ph. Komninou ◽  
H. M. Polatoglou ◽  
A. Serra ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries
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