Growth of A β-SiC Filli on a Si Substrate by a Direct Carbonization Method

1991 ◽  
Vol 220 ◽  
Author(s):  
Yasuaki Hirano ◽  
Taroh Inada
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Crystallization Process ◽  
Thermal Reaction ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Film Properties ◽  
X Ray ◽  
Si Substrates ◽  
Sic Films

Single crystal β-SiC films have been fabricated on (100)Si substrates through a thermal reaction between the substrate and carbon atoms sublimed from a high purity graphite source. The substrate temperature during the deposition ranged from 600 to 1100°C. The film properties were analyzed by RHEED and x-ray diffraction measurements. RBS measurements and TEM observations have also been made to investigate the film properties. The single crystal β-SiC films grow at and above 1000°C on (100) substrates. The activation energy is found to be around 1.1 eV for the crystallization process.

Low-Temperature Heteroepitaxy of β-SiC on Si (111) Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
T. Eshita ◽  
T. Suzuki ◽  
T. Hara ◽  
F. Mieno ◽  
Y. Furumura ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Large Area ◽  
Growth Technique ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Structure ◽  
Sic Films

AbstractWe developed a heteroepitaxial growth technique for large-area β-SiC films on Si substrates without buffer layers at 850ºC and 1000ºC. The substrates were vicinal 4-inch (111) Si wafers. The β-SiC films had smooth surfaces and were crack-free. X-ray diffraction and electron diffraction analysis revealed that the films grown at 1000ºC were single crystals. Satisfactory characteristics were obtained in aMOSFET with a β-SiC/Si02/poly-Si substrate structure. Our evaluations indicate that the β-SiC films were high-quality crystals.

Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si

2009 ◽  
Vol 615-617 ◽  
pp. 149-152 ◽  
Author(s):  
Andrea Severino ◽  
Ruggero Anzalone ◽  
Corrado Bongiorno ◽  
M. Italia ◽  
Giuseppe Abbondanza ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Si Substrate ◽  
Large Area ◽  
X Ray ◽  
Si Substrates ◽  
Fault Density ◽  
Transmission Electron ◽  
Pole Figures ◽  
Sic Films ◽  
Miscut Angle

The choice of off-axis (111) Si substrates is poorly reported in literature despite of the ability of such an oriented Si substrate in the reduction of stacking faults generation and propagation. The introduction of off-axis surface would be relevant for the suppression of incoherent boundaries. We grew 3C-SiC films on (111) Si substrates with a miscut angle from 3° to 6° along <110> and <11 >. The film quality was proved to be high by X-Ray diffraction (XRD) characterization. Transmission electron microscopy was performed to give an evaluation of the stacking fault density while pole figures were conducted to detect microtwins. Good quality single crystal 3C-SiC films were finally grown on 6 inch off-axis (111)Si substrate. The generated stress on both 2 and 6 inch 3C-SiC wafers has been analyzed and discussed.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

The crystal structure of a simple enol formed in a single-crystal-to-single-crystal enolene rearrangement

2004 ◽  
Vol 82 (2) ◽  
pp. 301-305 ◽  
Author(s):  
Kenneth CW Chong ◽  
Brian O Patrick ◽  
John R Scheffer
Keyword(s):  
Crystal Structure ◽  
Single Crystal ◽  
Single Crystals ◽  
Diffraction Data ◽  
Room Temperature ◽  
Thermal Reaction ◽  
Thermal Rearrangement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Phenyl Ketone

When crystals of 9-tricyclo[4.4.1.0]undecalyl-4-(carbomethoxy)phenyl ketone (1) were allowed to stand in the dark for extended periods of time at room temperature, the compound underwent a thermal reaction — the enolene rearrangement — to afford enol 2. The crystals remained transparent and appeared unchanged in shape as the reaction proceeded. X-ray diffraction data were collected on single crystals containing 17%, 25%, 66%, and 100% of the enol. The crystal structure of a simple enol was obtained via this novel single-crystal-to-single-crystal enolene rearrangement.Key words: single crystal, thermal, rearrangement, enol, enolene.

Enhancement of Aurivillius Phase Formation Kinetics in SBT Thin Films using Nanoparticle Seeding

2003 ◽  
Vol 784 ◽  
Author(s):  
Yun-Mo Sung ◽  
Woo-Chul Kwak ◽  
Se-Yon Jung ◽  
Seung-Joon Hwang
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Phase Transformation ◽  
Phase Formation ◽  
X Ray Diffraction ◽  
Aurivillius Phase ◽  
X Ray ◽  
Si Substrates ◽  
Formation Kinetics ◽  
Kinetics Of

ABSTRACTPt/Ti/SiO2/Si substrates seeded by SBT nanoparticles (∼60–80 nm) were used to enhance the phase formation kinetics of Sr0.7Bi2.4Ta2O9 (SBT) thin films. The volume fractions of Aurivillius phase formation obtained through quantitative x-ray diffraction (Q-XRD) analyses showed highly enhanced kinetics in seeded SBT thin films. The Avrami exponents were determined as ∼1.4 and ∼0.9 for unseeded and seeded SBT films, respectively, which reveals different nucleation modes. By using Arrhenius–type plots the activation energy values for the phase transformation of unseeded and seeded SBT thin films were determined to be ∼264 and ∼168 kJ/mol, respectively. This gives a key reason to the enhanced kinetics in seeded films. Microstructural analyses on unseeded SBT thin films showed formation of randomly oriented needle-like crystals, while those on seeded ones showed formation of domains comprised of directionally grown worm-like crystals.

scholarly journals 3C-SiC Films on Si for MEMS Applications: Mechanical Properties

2009 ◽  
Vol 615-617 ◽  
pp. 633-636 ◽  
Author(s):  
Christopher Locke ◽  
G. Kravchenko ◽  
P. Waters ◽  
J. D. Reddy ◽  
K. Du ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Small Degree ◽  
Film Stress ◽  
Si Substrate ◽  
Plastic Properties ◽  
Si Substrates ◽  
High Residual Stress ◽  
Mems Cantilevers ◽  
Sic Films

Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3C-SiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates were measured by means of nanoindentation using a Berkovich diamond tip. These results indicate that polycrystalline SiC thin films are attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging. MEMS cantilevers and membranes fabricated from a 2 µm thick single crystal 3C-SiC grown on (100)Si under similar conditions resulted in a small degree of bow with only 9 µm of deflection for a cantilever of 700 µm length with an estimated tensile film stress of 300 MPa. Single crystal 3C-SiC films on (111)Si substrates have the highest elastic and plastic properties, although due to high residual stress they tend to crack and delaminate.

Laser Recrystallization of InP Films on Oxidized Si Substrate

1985 ◽  
Vol 53 ◽  
Author(s):  
Li Xiqiang ◽  
Zhu Weiwen ◽  
Lin Chenglu ◽  
Wang Weiyuan ◽  
Tsou Shihchang
Keyword(s):  
Grain Size ◽  
Laser Power ◽  
Beam Diameter ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Laser Recrystallization ◽  
Before And After

ABSTRACTThe InP films with thickness of 1-2 µm and resistivity of 10-10−3Ω-cm were sputtered on oxidized Si substrates heated at about 300°C to form as InP SOI. Using X-ray diffraction, ED, TEM, Hall and RBS, we have investigated the grain size, compositions, thermal stability and electrical characteristics of InP SOI before and after CW Ar+ laser recrystallization. The sputtered InP SOI films appear as polycrystalline and its grain size increases with increasing of irradiated laser power from 5.8 to 7.0 W at a beam diameter of 70 µm. After irradiation at 7 W the single crystal ED patterns are obtained, the mobility and carrier concentrations amount to 103cm2/Vs and 1017cm−3, respectively, and the compositions are stoichiometric.

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