Production of GexSi1−x, and SiC Films on Si Substrates Using Particle-Beam Technologies

1992 ◽  
Vol 281 ◽  
Author(s):  
V. A. Kagadey ◽  
O. B. Ladizhensky ◽  
N. I. Lebedeva ◽  
E. N. Matin ◽  
D. I. Proskurovsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Point Defects ◽  
Particle Beam ◽  
High Dose ◽  
Si Substrate ◽  
Enhanced Diffusion ◽  
Si Substrates ◽  
Prolonged Annealing ◽  
Sic Films ◽  
High Dose Implantation

ABSTRACTThe paper presents the results of preliminary experiments on the production of GexSi1−x/Si structures using deposition of a thin Ge film on a Si substrate, implantation of Si ions and rapid electron-beam annealing. The conditions under which monocrystalline layers form have been found. It is supposed that the large depth of Ge penetration into Si is due to enhanced diffusion of Ge conditioned by the high density of point defects in the doped Si. It has been established that high-dose implantation of C ions into Si and subsequent electron beam annealing result in the formation of a monocrystalline layer of the SiC phase in the case of pulsed (∼0.7 μs) heating and liquid-phase recrystallisation and a polycrystalline SiC layer in the case of prolonged annealing.

Investigation of Lateral and Vertical Profiles Enhanced by Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Mineji ◽  
K. Hamada ◽  
S. Saito
Keyword(s):  
Point Defects ◽  
Diffusion Control ◽  
High Dose ◽  
Vertical Profiles ◽  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Junction Formation ◽  
D Region ◽  
High Dose Implantation

AbstractIn shallow junction formation with junction depth below 0.1μm, enhanced diffusion control is essential. The purpose of this paper is to investigate the B enhanced diffusion by point defects, introduced by high dose implantation with amorphization. Ge ions were implanted to induce amorphization within the S/D region of pMOS. These results were compared with that of the B enhanced diffusion by point defects, induced by Si+ implant with non-amorphization. These results suggest that the B enhanced diffusion in lateral profiles is much smaller, compared with that in vertical profiles, when point defects were introduced by amorphization.

Pulsed Electron Beam Annealing of GaAs after High Dose Implantation of Hydrogen

1997 ◽  
Vol 248-249 ◽  
pp. 253-256 ◽  
Author(s):  
T. Hauser ◽  
L. Bredell ◽  
H. Gaigher ◽  
H. Alberts ◽  
A. Botha ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Dose ◽  
Pulsed Electron Beam ◽  
High Dose Implantation

Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Krishnamoorthy ◽  
D. Venables ◽  
K. Moeller ◽  
K. S. Jones ◽  
B. Freer
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Diffusion Enhancement ◽  
Defect Microstructures ◽  
Dose Dependent ◽  
Higher Doses ◽  
Defect Microstructure

Abstract(001) CZ silicon wafers were implanted with arsenic (As+) at energies of 10–50keV to doses of 2×1014 to 5×1015/cm2. All implants were amorphizing in nature. The samples were annealed at 700°C for 16hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

Simulation of Transient Enhanced Diffusion in Silicon Taking into Account Ostwald Ripening of Defects

2002 ◽  
Vol 717 ◽  
Author(s):  
Masashi Uematsu
Keyword(s):  
Time Dependence ◽  
Diffusion Model ◽  
Low Dose ◽  
Ostwald Ripening ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Annealing Conditions ◽  
Transient Enhanced Diffusion ◽  
High Dose Implantation ◽  
Medium Dose

AbstractThe transient enhanced diffusion (TED) of high-dose implanted P is simulated taking into account Ostwald ripening of end-of-range (EOR) defects. First, we integrated a basic diffusion model based on the simulation of in-diffusion, where no implanted damages are involved. Second, from low-dose implantation, we developed a model for TED due to {311} self-interstitial (I) clusters involving Ostwald ripening and the dissolution of {311} clusters. Third, from medium-dose implantation, we showed that P-I clusters should be taken into account, and during the diffusion, the clusters are dissolved to emit self-interstitials that also contribute to TED. Finally, from high-dose implantation, EOR defects are modeled and we derived a formula to describe the time-dependence for Ostwald ripening of EOR defects, which is more significant at higher temperatures and longer annealing times. The simulation satisfactorily predicts the TED for annealing conditions, where the calculations overestimate the diffusion without taking Ostwald ripening into account.

Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si

1996 ◽  
Vol 439 ◽  
Author(s):  
V. Krishnamoorthy ◽  
D. Venables ◽  
K. Moeller ◽  
K. S. Jones ◽  
B. Freer
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Diffusion Enhancement ◽  
Defect Microstructures ◽  
Dose Dependent ◽  
Higher Doses ◽  
Defect Microstructure

Abstract(001) CZ silicon wafers were implanted with arsenic (As+) at energies of 10–50keV to doses of 2x 1014 to 5x1015/cm2. All implants were amorphizing in nature. The samples were annealed at 700°C for 16hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

scholarly journals 3C-SiC Films on Si for MEMS Applications: Mechanical Properties

2009 ◽  
Vol 615-617 ◽  
pp. 633-636 ◽  
Author(s):  
Christopher Locke ◽  
G. Kravchenko ◽  
P. Waters ◽  
J. D. Reddy ◽  
K. Du ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Small Degree ◽  
Film Stress ◽  
Si Substrate ◽  
Plastic Properties ◽  
Si Substrates ◽  
High Residual Stress ◽  
Mems Cantilevers ◽  
Sic Films

Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3C-SiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates were measured by means of nanoindentation using a Berkovich diamond tip. These results indicate that polycrystalline SiC thin films are attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging. MEMS cantilevers and membranes fabricated from a 2 µm thick single crystal 3C-SiC grown on (100)Si under similar conditions resulted in a small degree of bow with only 9 µm of deflection for a cantilever of 700 µm length with an estimated tensile film stress of 300 MPa. Single crystal 3C-SiC films on (111)Si substrates have the highest elastic and plastic properties, although due to high residual stress they tend to crack and delaminate.

Growth of A β-SiC Filli on a Si Substrate by a Direct Carbonization Method

1991 ◽  
Vol 220 ◽  
Author(s):  
Yasuaki Hirano ◽  
Taroh Inada
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Crystallization Process ◽  
Thermal Reaction ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Film Properties ◽  
X Ray ◽  
Si Substrates ◽  
Sic Films

Single crystal β-SiC films have been fabricated on (100)Si substrates through a thermal reaction between the substrate and carbon atoms sublimed from a high purity graphite source. The substrate temperature during the deposition ranged from 600 to 1100°C. The film properties were analyzed by RHEED and x-ray diffraction measurements. RBS measurements and TEM observations have also been made to investigate the film properties. The single crystal β-SiC films grow at and above 1000°C on (100) substrates. The activation energy is found to be around 1.1 eV for the crystallization process.

High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon

2013 ◽  
Vol 740-742 ◽  
pp. 327-330 ◽  
Author(s):  
Maki Suemitsu ◽  
Shota Sanbonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
The Other ◽  
High Rate ◽  
Si Substrate ◽  
High Quality ◽  
Si Substrates ◽  
Growth Method ◽  
Step Growth ◽  
Sic Film ◽  
Sic Films

In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

Investigation of the microstructure of hetero-epitaxial Si/CoSi2/Si (001) and (111) structures by TEM

1990 ◽  
Vol 48 (4) ◽  
pp. 386-387
Author(s):  
C.W.T. Bulle-Lieuwma ◽  
A.H. van Ommen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
High Resolution Electron Microscopy ◽  
High Dose ◽  
Metal Base ◽  
Si Substrates ◽  
Transmission Electron ◽  
Resolution Electron ◽  
High Dose Implantation

Hetero-epitaxial Si/CoSi2/Si structures have been formed by high dose implantation of Co+ ions into (001) and (111) Si substrates and subsequent annealing of the substrates. Such structures are of interest due to their application as metal base base and permeable base transistors. We have studied the microstructure of both as-implanted and annealed structures by transmission electron microscopy (TEM), including high-resolution electron microscopy (HREM). HREM was performed using a Philips 300 kV electron microscope with a point resolution of approximately 0.19 nm. CoSi2 layers have been formed by implantation of 170 keV Co+ ions at a temperature of 450°C and to doses of 1× 1017 and 2× 1017 Co+ / cm2. The wafers were annealed for 30 minutes in a N2/H2 ambient at a temperature of 1000°C. In the as implanted structures, the Co is present in the form of epitaxial CoSi2 precipitates. Precipitates occur both in an aligned (A-type) and twinned (B-type) orientation. Annealing of the implanted structures results in the formation of a buried CoSi2 layer of aligned orientation. A striking observation is that the CoSi2 layer has an aligned orientation with respect to the Si matrix, whereas CoSi2 grown on top of (111) Si has a twinned orientation. The mechanism behind this phenomenon is not fully understood. We think that geometrical aspects play a crucial role. Therefore we have studied in detail the geometry of the coordination of coherent CoSi2 precipitates.

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