Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films

1994 ◽  
Vol 357 ◽  
Author(s):  
Jinshan Li ◽  
Robert Sinclair ◽  
Stephen S. Rosenblum ◽  
Hidetaka Hayashi
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Transition Layer ◽  
Barium Ferrite ◽  
Lattice Mismatch ◽  
Interface Reaction ◽  
Magnetic Thin Films ◽  
Point Of View ◽  
Si Substrates ◽  
Out Of Plane

AbstractUsing facing target sputtering, crystalline magnetoplumbite-type barium ferrite (BaFe12O19 or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as ZnFe2O4, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth.

Reaction-mediated texturing of barium ferrite magnetic thin films on ZnO underlayer

1995 ◽  
Vol 10 (9) ◽  
pp. 2343-2349 ◽  
Author(s):  
Jinshan Li ◽  
Robert Sinclair ◽  
Stephen S. Rosenblum ◽  
Hidetaka Hayashi
Keyword(s):  
Thin Films ◽  
Transition Layer ◽  
Barium Ferrite ◽  
Lattice Mismatch ◽  
Magnetic Thin Films ◽  
Point Of View ◽  
Ex Situ ◽  
Si Substrates ◽  
Out Of Plane ◽  
Facing Target Sputtering

Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite (BaFe12O19 or BaM) thin films have been prepared in situ at a substrate temperature of 640 °C without postdeposition annealing. Using our facing target sputtering system, BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230 Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2°c-axis dispersion angle, as indicated by x-ray diffraction (XRD). Cross-section transmission electron microscopy (XTEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as ZnFe2O4, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. ZnFe2O4 is a reaction product of BaM and ZnO, as indicated by both TEM and XRD. After ex situ annealing the film in air at 800 °C, the ZnFe2O4 layer becomes thicker at the expense of BaM and ZnO. The lattice parameters of both BaM and ZnO decreased as annealing time increased.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al2O3(001) buffer layer

2004 ◽  
Vol 264 (1-3) ◽  
pp. 463-467 ◽  
Author(s):  
D. Akai ◽  
K. Hirabayashi ◽  
M. Yokawa ◽  
K. Sawada ◽  
M. Ishida
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Si Substrates

Epitaxial growth of magnetoresistive (00h), (0hh), and (hhh) La2/3Sr1/3MnO3 thin films on (001)Si substrates

1999 ◽  
Vol 74 (12) ◽  
pp. 1743-1745 ◽  
Author(s):  
J. Fontcuberta ◽  
M. Bibes ◽  
B. Martínez ◽  
V. Trtik ◽  
C. Ferrater ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Si Substrates

Room-temperature epitaxial growth of indium tin oxide thin films on Si substrates with an epitaxial CeO2 ultrathin buffer

2002 ◽  
Vol 415 (1-2) ◽  
pp. 272-275 ◽  
Author(s):  
J Tashiro ◽  
A Sasaki ◽  
S Akiba ◽  
S Satoh ◽  
T Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Si Substrates

EFFECT OF SUBSTRATE ON THE EPITAXIAL GROWTH OF BOROCARBIDE THIN FILMS

2003 ◽  
Vol 17 (04n06) ◽  
pp. 824-829 ◽  
Author(s):  
CARLO FERDEGHINI ◽  
GIUSEPPE GRASSANO ◽  
EMILIO BELLINGERI ◽  
DANIELE MARRÈ ◽  
WEGDAN RAMADAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Coincident Site Lattice ◽  
Superconducting Properties ◽  
Axis Orientation ◽  
High Vacuum Condition ◽  
Crystallographic Symmetry

The influence of the substrate on the epitaxial growth of borocarbide thin films was extensively studied. LuNi 2 B 2 C thin films were deposited by pulsed laser ablation from a stoichiometry target in high vacuum condition on different kind of substrates. Different cuts of MgO crystals with different surface crystallographic symmetry were employed. All the samples show a good c-axis orientation and rocking curves around LuNi 2 B 2 C (004) reflection show important differences both in width and in shape for the samples deposited on the different substrates. The growth of the film is effectively driven by the substrate even in the case of big lattice mismatch as in the case of MgO substrates. Different behaviors of the in-plane texture were observed on the different MgO cuts: an almost perfect epitaxial growth was obtained on the MgO (110) whereas multiple in-plane orientations are present on MgO (100) and (111). These results and all the observed orientations are well explained and understood in term of a simple geometrical near-coincident site lattice model (NCSL). A correlation between structural and superconducting properties is observed and the properties of best samples are similar to monocrystals ones ( T c = 16.4 K Δ T c = 0.3 K , RRR = 13).

Influence of stress on structural and dielectric anomaly of Bi2(Zn1/3Ta2/3)207 thin films

2005 ◽  
Vol 875 ◽  
Author(s):  
Jun Hong Noh ◽  
Hee Bum Hong ◽  
Kug Sun Hong
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Interfacial Layer ◽  
Monoclinic Phase ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Dielectric Anomaly ◽  
Laser Deposition ◽  
Cubic Phase ◽  
Si Substrates

AbstractBi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.

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