Six-Inch Diameter GaAs on Si Wafers

1988 ◽  
Vol 116 ◽  
Author(s):  
Jack P. Salerno ◽  
D. S. Hill ◽  
J. W. Lee ◽  
R. E. McCullough ◽  
John C. C. Fan
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
High Quality ◽  
Gaas On Si ◽  
Mechanical And Electrical Properties ◽  
Crystal Gaas ◽  
Specular Surfaces

AbstractThe growth of high-quality single crystal GaAs on Si wafers up to six inches in diameter by organometallic chemical vapor deposition (OMCVD) is reported. These wafers have specular surfaces, excellent thickness uniformity, and are shown to have properties comparable to those of smaller diameter GaAs on Si wafers. The mechanical and electrical properties of the six inch GaAs on Si wafers are shown to be suitable for GaAs device fabrication.

scholarly journals Establishment of a reliable transfer process for fabricating chemical vapor deposition-grown graphene films with advanced and repeatable electrical properties

RSC Advances ◽  
2018 ◽  
Vol 8 (35) ◽  
pp. 19846-19851 ◽  
Author(s):  
Dongyun Sun ◽  
Wei Wang ◽  
Zhaoping Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Transfer Process ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Cvd Method ◽  
Graphene Films ◽  
Grown Graphene ◽  
Commercial Applications

Graphene films grown by the chemical vapor deposition (CVD) method have attracted intensive attention due to their native advantages of both high quality and large quantity for commercial applications.

Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Process Window ◽  
High Quality ◽  
Low Temperature Preparation

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition

1993 ◽  
Vol 132 (3-4) ◽  
pp. 414-418 ◽  
Author(s):  
T. Soga ◽  
T. Suzuki ◽  
M. Mori ◽  
Z.K. Jiang ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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