Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

2014 ◽  
Vol 105 (6) ◽  
pp. 062101 ◽  
Author(s):  
W. Guo ◽  
L. Date ◽  
V. Pena ◽  
X. Bao ◽  
C. Merckling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Chemical Vapor Deposition Growth ◽  
Gaas On Si ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 1014 ◽  
pp. 22-26
Author(s):  
Yi Zhuo ◽  
Zi Min Chen ◽  
Sheng Dong Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this work, In2O3 thin films were grown on (111) yttria-stabilized zirconia (YSZ) by metal-organic chemical vapor deposition (MOCVD) at different temperature. It is found that samples grown at low temperature showed lower residual stress but higher mosaicity while high growth temperatures could also cause deterioration in crystal quality due to increasing lattice mismatch. To obtain high quality In2O3 film with low residual strain, a 30-nm thick layer grown at 530 °C was introduced as buffer layer, considering both stress relaxation and crystalline mosaicity. By using two-step growth method, a 400 nm-thick, high quality, near-strain-free In2O3 thin film with the full width at half maximum (FWHM) values of (222) diffraction peaks being as narrow as 648 arcsec was successfully obtained.

Metal–Organic Chemical Vapor Deposition Growth of ZnGeN2 Films on Sapphire

2019 ◽  
Vol 19 (8) ◽  
pp. 4661-4666 ◽  
Author(s):  
Md Rezaul Karim ◽  
Benthara Hewage Dinushi Jayatunga ◽  
Zixuan Feng ◽  
Kathleen Kash ◽  
Hongping Zhao
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Metal Organic Chemical Vapor Deposition Growth of GaN and GaMnN Multifunctional Nanostructures

2005 ◽  
Vol 901 ◽  
Author(s):  
Shalini Gupta ◽  
Hun Kang ◽  
Matthew Kane ◽  
William E Fenwick ◽  
Nola Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Nitrogen Atmosphere ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractQuantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect ofin-situactivation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.

Controlling nucleation of monolayer WSe 2 during metal-organic chemical vapor deposition growth

2D Materials ◽  
2016 ◽  
Vol 3 (2) ◽  
pp. 025015 ◽  
Author(s):  
Sarah M Eichfeld ◽  
Víctor Oliveros Colon ◽  
Yifan Nie ◽  
Kyeongjae Cho ◽  
Joshua A Robinson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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