Some mechanical and electrical properties of polyfluoro-p-xylylene films prepared by chemical vapor deposition

1990 ◽  
Vol 40 (910) ◽  
pp. 1795-1800
Author(s):  
D. Liu ◽  
F. Y. Liu ◽  
X. L. Huang ◽  
F. Q. Qu ◽  
K. C. Kao
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mechanical And Electrical Properties

Six-Inch Diameter GaAs on Si Wafers

1988 ◽  
Vol 116 ◽  
Author(s):  
Jack P. Salerno ◽  
D. S. Hill ◽  
J. W. Lee ◽  
R. E. McCullough ◽  
John C. C. Fan
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
High Quality ◽  
Gaas On Si ◽  
Mechanical And Electrical Properties ◽  
Crystal Gaas ◽  
Specular Surfaces

AbstractThe growth of high-quality single crystal GaAs on Si wafers up to six inches in diameter by organometallic chemical vapor deposition (OMCVD) is reported. These wafers have specular surfaces, excellent thickness uniformity, and are shown to have properties comparable to those of smaller diameter GaAs on Si wafers. The mechanical and electrical properties of the six inch GaAs on Si wafers are shown to be suitable for GaAs device fabrication.

Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition

1993 ◽  
Vol 132 (3-4) ◽  
pp. 414-418 ◽  
Author(s):  
T. Soga ◽  
T. Suzuki ◽  
M. Mori ◽  
Z.K. Jiang ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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