Hydrogen Neutralization of Chalcogen double donor Centers in Single-Crystal Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
Gerhard Pensl ◽  
G. Roos ◽  
P. Stolz ◽  
N. M. Johnson ◽  
C. Holm
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Doped Silicon ◽  
Dlts Spectra

ABSTRACTChalcogen (S,Se,Te) -doped silicon samples were hydrogen neutralized by different passivation techniques. The electrically active double-donor densities were determined by DLTS measurements. DLTS spectra reveal that both donor levels recover simultaneously. The activation energy for re-activation of neutralized isolated and pure pair sulphur double-donors is Ea(So/+) = 2,13 ± 0,15 eV and Ea(S2o/+) = 2,1 ± 0,15 eV, respectively.

scholarly journals Механизм диффузии монооксидов углерода и кремния в кристалле кубического карбида кремния

2019 ◽  
Vol 61 (12) ◽  
pp. 2334
Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Silicon Monoxide ◽  
Vacancy Mechanism ◽  
Reaction Products ◽  
Crystal Silicon ◽  
Single Crystal Sic ◽  
Co Gas

The basic processes are described occurring in the case of the diffusion of carbon monoxide CO and silicon monoxide SiO through a layer of single-crystal silicon carbide SiC. This problem arises when a single-crystal SiC layer is grown by the method of atom substitution due to the chemical reaction of a crystalline silicon substrate with CO gas. The reaction products are the epitaxial layer of SiC and the gas SiO. It has been shown that CO and SiO molecules decompose in SiC crystals. Oxygen atoms migrate through interstitials in the [110] direction only with an activation energy of 2.6 eV. The migration of Si and C atoms occurs by the vacancy mechanism in the corresponding sublattices with activation energies of 3.6 eV and 3.9 eV, respectively, and also in the [110] direction only.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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