Hydrogen in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
J. W. Corbett ◽  
J. L. Lindström ◽  
S. J. Pearton
Keyword(s):  
Hydrogen Diffusion ◽  
Hydrogen Passivation ◽  
Floating Zone ◽  
Dangling Bonds ◽  
Low Resistivity ◽  
Shallow Donors ◽  
Type Silicon ◽  
Shallow Acceptors ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTWe summarize the recent results in hydrogen passivation in silicon, including presenting comprehensive diffusion profiles, i.e., profiles in floating zone n-type and p-type silicon vs resistivity. Domination of hydrogen diffusion by impurity trapping is clearly indicated for part of the profile in low resistivity p-type Si. Also mentioned are the current models of hydrogen passivation of dangling bonds, shallow acceptors, shallow donors, and hyper-deep defects.

Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon

1990 ◽  
Vol 209 ◽  
Author(s):  
R. Rizk ◽  
P. De Mierry ◽  
D. Ballutaud ◽  
M. Aucouturier ◽  
D. Mathiot
Keyword(s):  
Hydrogen Diffusion ◽  
New Approach ◽  
Kinetic And Thermodynamic Parameters ◽  
Dissociation Energies ◽  
Molecule Formation ◽  
Type Silicon ◽  
P Type ◽  
Phosphorus Doped ◽  
Diffusion Profiles

ABSTRACTDeuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm−3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model. The new approach which excludes the H2 molecule formation, as applied recently to ptype silicon, allows the determination of kinetic and thermodynamic parameters such as diffusion coefficients, activation and dissociation energies. These parameters 6re compared with those found for p-type silicon and discussed in the light ofavailable data for n-type material.

Hydrogen Passivation of Laser-Induced Acceptor Defects in p-Type Silicon

1982 ◽  
Vol 72 (2) ◽  
pp. K155-K158 ◽  
Author(s):  
E. M. Lawson ◽  
S. J. Pearton
Keyword(s):  
Hydrogen Passivation ◽  
Type Silicon ◽  
P Type

Effects in Silicon Explained by Atomic Hydrogen

1987 ◽  
Vol 104 ◽  
Author(s):  
A. Schnegg ◽  
H. Prigge ◽  
M. Grundner ◽  
P. O. Hahn ◽  
H. Jacob
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Diffusion ◽  
Silicon Layer ◽  
Deuterium Content ◽  
Slight Reduction ◽  
Oh Groups ◽  
Acceptor Concentration ◽  
Type Silicon ◽  
Crystal Imperfections ◽  
P Type

ABSTRACTThe chemomechanical polishing mechanism is described as a corrosive attack of water forming Si-H and Si-OH groups. By adding ammonia or amines to the slurry we observe an irlfease of the resistivity corresponding to a neutralization of up to 1 × 1017 acceptor atoms cm−3 in the case of p-type silicon, whereas n-type silicon can show a slight reduction in resistivity due to the neutralization of the residual acceptor concentration.SIMS measurements show the presence of hydrogen in the bulk. Using deuterium instead of hydrogen, a correlation could be established between the deuterium content of the wafer, measured by the effusion technique, and the degree of the acceptor compensation.As can be shown by resistivity and C/V-measurements, under the conditions of polishing the supposed inactivator hydrogen migrates to a distance finally corresponding to the thickness of a wafer. This is contrary to the comm on method of plasma treatment, where a damaged silicon layer is supposed to act as a barrier to the hydrogen diffusion. Differences in the IR spectra can be explained this way.Crystal imperfections in the bulk and on the surface influences the migration of hydrogen essentially.

Dependence of Hydrogen Diffusion on the Electric Field in p-Type Silicon

2004 ◽  
Vol 151 (9) ◽  
pp. G564 ◽  
Author(s):  
Y. L. Huang ◽  
B. Wdowiak ◽  
R. Job ◽  
Y. Ma ◽  
W. R. Fahrner
Keyword(s):  
Electric Field ◽  
Hydrogen Diffusion ◽  
Type Silicon ◽  
P Type

scholarly journals Electrical Instability of CdTe:Si Crystals

2017 ◽  
Vol 18 (1) ◽  
pp. 29-33
Author(s):  
Ye.S. Nykoniuk ◽  
O.E. Panchuk ◽  
S.V. Solodin ◽  
Z.I. Zakharuk ◽  
P.M. Fochuk ◽  
...  
Keyword(s):  
Dopant Concentration ◽  
Impurity States ◽  
Deep Acceptor ◽  
Type Conductivity ◽  
Low Resistance ◽  
Shallow Donors ◽  
Electrical Instability ◽  
Hall Effect Measurements ◽  
Shallow Acceptors ◽  
P Type

Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 1018 - 1019 cm-3), allowed to classify the studied samples and the conditions under which probably the definite crystal and impurity states are realized. We have found the distinction between 3 type of CdTe:Si crystals: (1) low-resistance p-type crystals with shallow acceptors, in which Si impurity is localized mainly in the large inclusions; (2) semi-insulating crystal with deep acceptors and submicron size dopant precipitates that are source/drain for interstitials Sii - shallow donors;  and (3) low-resistance crystals in which the n-type conductivity is provided by shallow donors: Sii (and/or SiCd). Therefore the silicon is responsible for n-type conductivity of doped samples, introducing as a donor Siі and provides semi-insulating state by forming deep acceptor complexes (SiCd-VCd2-)- with (Еv + 0.65 eV). Besides, the submicron silica precipitates, that have a tendto"dissolution" at relatively low temperatures, can act aselectricallyactive centers.

Hydrogen passivation of shallow acceptors in p-type InP

1989 ◽  
Vol 4 (2) ◽  
pp. 87-90 ◽  
Author(s):  
J Chevallier ◽  
A Jalil ◽  
B Theys ◽  
J C Pesant ◽  
M Aucouturier ◽  
...  
Keyword(s):  
Hydrogen Passivation ◽  
Shallow Acceptors ◽  
P Type

Arsenic Redistribution and Outdiffusion in Implanted Czochralski-Grown P-Type Silicon During Rapid Thermal Annealing

1988 ◽  
Vol 100 ◽  
Author(s):  
G. Chaussemy ◽  
B. Canut ◽  
S. N. Kumar ◽  
D. Barbier ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Coefficients ◽  
Good Description ◽  
Temperature Dependent ◽  
One Dimensional ◽  
Type Silicon ◽  
The One ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTThe effects of the implantation parameters (dose and energy) on the Arsenic redistribution and outdiffusion rate in (100) p-type silicon, after 7–12 s Rapid Thermal Annealing in the 1100–1200°C temperature range have been investigated. Four doses ranging from 2×1014 to l×1016 cm−2, and As+ energies between 70 and 170 keV, have been studied. The experimental diffusion profiles obtained from the SIMS measurements, in complement with the RBS results, were modelled using the one dimensional Fick's equation with semi-infinite boundary conditions, using a concentration and temperature dependent diffusion coefficient D(C, T). The As diffusivity was classically attributed to As+V0, As+V−, and As+V − pairs with the related diffusion coefficients taken from the literature. A relatively good description of the As redistribution was obtained without introducing any transient or SPE effects.

A study of buried channel formation in oxidized porous silicon

RSC Advances ◽  
2014 ◽  
Vol 4 (101) ◽  
pp. 57402-57411 ◽  
Author(s):  
Z. Y. Dang ◽  
D. Q. Liu ◽  
S. Azimi ◽  
M. B. H. Breese
Keyword(s):  
Porous Silicon ◽  
Ion Irradiation ◽  
High Energy ◽  
Channel Formation ◽  
Low Resistivity ◽  
Type Silicon ◽  
Buried Channel ◽  
Oxidized Porous Silicon ◽  
P Type

We have studied the formation of buried, hollow channels in oxidized porous silicon produced by a process based on focused high-energy ion irradiation of low resistivity, p-type silicon.

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