Dependence of Hydrogen Diffusion on the Electric Field in p-Type Silicon

2004 ◽  
Vol 151 (9) ◽  
pp. G564 ◽  
Author(s):  
Y. L. Huang ◽  
B. Wdowiak ◽  
R. Job ◽  
Y. Ma ◽  
W. R. Fahrner
Keyword(s):  
Electric Field ◽  
Hydrogen Diffusion ◽  
Type Silicon ◽  
P Type

Hydrogen in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
J. W. Corbett ◽  
J. L. Lindström ◽  
S. J. Pearton
Keyword(s):  
Hydrogen Diffusion ◽  
Hydrogen Passivation ◽  
Floating Zone ◽  
Dangling Bonds ◽  
Low Resistivity ◽  
Shallow Donors ◽  
Type Silicon ◽  
Shallow Acceptors ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTWe summarize the recent results in hydrogen passivation in silicon, including presenting comprehensive diffusion profiles, i.e., profiles in floating zone n-type and p-type silicon vs resistivity. Domination of hydrogen diffusion by impurity trapping is clearly indicated for part of the profile in low resistivity p-type Si. Also mentioned are the current models of hydrogen passivation of dangling bonds, shallow acceptors, shallow donors, and hyper-deep defects.

Effects in Silicon Explained by Atomic Hydrogen

1987 ◽  
Vol 104 ◽  
Author(s):  
A. Schnegg ◽  
H. Prigge ◽  
M. Grundner ◽  
P. O. Hahn ◽  
H. Jacob
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Diffusion ◽  
Silicon Layer ◽  
Deuterium Content ◽  
Slight Reduction ◽  
Oh Groups ◽  
Acceptor Concentration ◽  
Type Silicon ◽  
Crystal Imperfections ◽  
P Type

ABSTRACTThe chemomechanical polishing mechanism is described as a corrosive attack of water forming Si-H and Si-OH groups. By adding ammonia or amines to the slurry we observe an irlfease of the resistivity corresponding to a neutralization of up to 1 × 1017 acceptor atoms cm−3 in the case of p-type silicon, whereas n-type silicon can show a slight reduction in resistivity due to the neutralization of the residual acceptor concentration.SIMS measurements show the presence of hydrogen in the bulk. Using deuterium instead of hydrogen, a correlation could be established between the deuterium content of the wafer, measured by the effusion technique, and the degree of the acceptor compensation.As can be shown by resistivity and C/V-measurements, under the conditions of polishing the supposed inactivator hydrogen migrates to a distance finally corresponding to the thickness of a wafer. This is contrary to the comm on method of plasma treatment, where a damaged silicon layer is supposed to act as a barrier to the hydrogen diffusion. Differences in the IR spectra can be explained this way.Crystal imperfections in the bulk and on the surface influences the migration of hydrogen essentially.

Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon

1990 ◽  
Vol 209 ◽  
Author(s):  
R. Rizk ◽  
P. De Mierry ◽  
D. Ballutaud ◽  
M. Aucouturier ◽  
D. Mathiot
Keyword(s):  
Hydrogen Diffusion ◽  
New Approach ◽  
Kinetic And Thermodynamic Parameters ◽  
Dissociation Energies ◽  
Molecule Formation ◽  
Type Silicon ◽  
P Type ◽  
Phosphorus Doped ◽  
Diffusion Profiles

ABSTRACTDeuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm−3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model. The new approach which excludes the H2 molecule formation, as applied recently to ptype silicon, allows the determination of kinetic and thermodynamic parameters such as diffusion coefficients, activation and dissociation energies. These parameters 6re compared with those found for p-type silicon and discussed in the light ofavailable data for n-type material.

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type
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