A study of buried channel formation in oxidized porous silicon

RSC Advances ◽  
2014 ◽  
Vol 4 (101) ◽  
pp. 57402-57411 ◽  
Author(s):  
Z. Y. Dang ◽  
D. Q. Liu ◽  
S. Azimi ◽  
M. B. H. Breese
Keyword(s):  
Porous Silicon ◽  
Ion Irradiation ◽  
High Energy ◽  
Channel Formation ◽  
Low Resistivity ◽  
Type Silicon ◽  
Buried Channel ◽  
Oxidized Porous Silicon ◽  
P Type

We have studied the formation of buried, hollow channels in oxidized porous silicon produced by a process based on focused high-energy ion irradiation of low resistivity, p-type silicon.

Hydrogen in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
J. W. Corbett ◽  
J. L. Lindström ◽  
S. J. Pearton
Keyword(s):  
Hydrogen Diffusion ◽  
Hydrogen Passivation ◽  
Floating Zone ◽  
Dangling Bonds ◽  
Low Resistivity ◽  
Shallow Donors ◽  
Type Silicon ◽  
Shallow Acceptors ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTWe summarize the recent results in hydrogen passivation in silicon, including presenting comprehensive diffusion profiles, i.e., profiles in floating zone n-type and p-type silicon vs resistivity. Domination of hydrogen diffusion by impurity trapping is clearly indicated for part of the profile in low resistivity p-type Si. Also mentioned are the current models of hydrogen passivation of dangling bonds, shallow acceptors, shallow donors, and hyper-deep defects.

Development of Silicon-Based UV-Photodetector Prototypes using Photoluminescent Nanocrystalline Silicon Overlayers

2000 ◽  
Vol 638 ◽  
Author(s):  
Carlos Navarro ◽  
Luis F. Fonseca ◽  
Guillermo Nery ◽  
O. Resto ◽  
S. Z. Weisz
Keyword(s):  
Porous Silicon ◽  
Active Zone ◽  
Silicon Detector ◽  
Nanocrystalline Silicon ◽  
Incident Radiation ◽  
Enhancement Effect ◽  
Type Silicon ◽  
Quantum Confinement Effects ◽  
Si Films ◽  
P Type

AbstractThe maximum photoresponse of a normal silicon photodetector, that uses a p-n junction as the active zone, is obtained when the incident radiation wavelength is around 750nm. This response diminishes significantly when the incident radiation is near or in the UV region. Meanwhile, nanocrystalline silicon (nc-Si) films with high transparency above 650nm and high absorbance in the UV can be prepared. By quantum confinement effects, a fraction of this absorbed UV energy is re-emitted as visible photons that can be used by the junction. We study the enhancement of the UV-photoresponse of two silicon detector prototypes with a silicon p-n junction active zone and with a photoluminescent nc-Si overlayer. One prototype is made with a porous silicon/n-type silicon/p-type silicon/p++-silicon/metal configuration and the other with an Eu-doped Si-SiO2 overlayer instead of the porous silicon one. The comparison between both prototypes and the control is presented and discussed stressing on the enhancement effect introduced by the photoluminescent overlayers, stability and reproducibility.

Annealing Behavior of Donorlike Defects Induced by High-Fluence Irradiation of High-Energy Particles in p-Type Silicon

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 5187-5188 ◽  
Author(s):  
Hideharu Matsuura ◽  
Takuya Ishida ◽  
Taishi Kirihataya ◽  
Osamu Anzawa ◽  
Sumio Matsuda
Keyword(s):  
High Energy ◽  
High Fluence ◽  
Annealing Behavior ◽  
Type Silicon ◽  
P Type ◽  
High Energy Particles

Fabrication of patterned porous silicon using high-energy ion irradiation

2006 ◽  
Vol 13 (3-4) ◽  
pp. 259-261 ◽  
Author(s):  
E. J. Teo ◽  
M. B. H. Breese ◽  
A. A. Bettiol ◽  
F. J. T. Champeaux ◽  
F. Watt ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Ion Irradiation ◽  
High Energy

FEATURES OF P-TYPE SILICON COMBUSTION IN THE SOLID FUEL PSI-NACLO4 · H2O COMPOSITES

2020 ◽  
Author(s):  
V. N. MIRONOV ◽  
◽  
O. G. PENYAZKOV ◽  
P. N. KRIVOSHEYEV ◽  
Y. A. BARANYSHYN ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Solid Fuel ◽  
Type Silicon ◽  
Oxidative Reactions ◽  
P Type ◽  
Propagation Velocities

The ability of porous silicon to actively participate in oxidative reactions leading to combustion and explosion when interacting with reagents in the pores was established about twenty years ago [1] but because of the high propagation velocities of these physicochemical transformations (102-103 m/s), it was di©cult to understand their mechanisms.

Improvement in the photoluminescence efficiency of porous silicon using high-energy silicon ion irradiation

1996 ◽  
Vol 29 (2) ◽  
pp. 462-465 ◽  
Author(s):  
Tejashree M Bhave ◽  
S V Bhoraskar ◽  
Shriram Kulkarni ◽  
V N Bhoraskar
Keyword(s):  
Porous Silicon ◽  
Ion Irradiation ◽  
High Energy ◽  
Photoluminescence Efficiency
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