Deep level capture barrier in molecular beam epitaxial grown AlAsySb1−y measured by isothermal capacitance transient spectroscopy

1997 ◽  
Vol 71 (4) ◽  
pp. 506-508 ◽  
Author(s):  
D. K. Johnstone ◽  
Y. K. Yeo ◽  
R. L. Hengehold ◽  
G. W. Turner
Keyword(s):  
Molecular Beam ◽  
Deep Level ◽  
Molecular Beam Epitaxial ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Rapid-Thermal-Processing Induced Deep Level Traps and their Spatial Distribution in MBE GaAs

1987 ◽  
Vol 92 ◽  
Author(s):  
Akio Kitagawa ◽  
Yutaka Tokuda ◽  
Akira Usami ◽  
Takao Wada ◽  
Hiroyuki kano
Keyword(s):  
Thermal Processing ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Spatial Variations ◽  
Molecular Beam Epitaxial ◽  
Gaas Films ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTRapid thermal processing (RTP) using halogen lamps for a Si-doped molecular beam epitaxial (MBE) n-GaAs layers was investigated by deep level transient spectroscopy. RTP was performed at 700°C, 800°C and 900°C for 6 s. Two electron traps NI ( Ec-0.5-0.7eV) and EL2 (Ec - 0.82 eV) are produced by RTP at 800 and 900°C.The peculiar spatial variations of the Nl and EL2 concentration across the MBE GaAs films are observed. The larger concentrations of the trap N1 and EL2 are observed near the edge of the samples, and the minima of N1 and EL2 concentration lie between the center and the edge of the sample. It seems that these spatial variations of N1 and EL2 concentration are consistent with that of the thermal stress induced by RTP. Furthermore, the EL2 concentration near the edge of the sample is suppressed by the contact with the GaAs pieces on the edge around the sample during RTP.

DLTS Study on Annealed Low-Temperature GaAs Layers with An n-I(LT)-n Structure Grown by MBE

1995 ◽  
Vol 378 ◽  
Author(s):  
Tsai-Cheng Lin ◽  
Hiromasa T Kaibe ◽  
Tsugunori Okumura
Keyword(s):  
Low Temperature ◽  
Molecular Beam ◽  
Deep Level ◽  
Gaas Layer ◽  
Electron Trap ◽  
Molecular Beam Epitaxial ◽  
Sample Structure ◽  
Transient Spectroscopy ◽  
Low Temperature Gaas ◽  
Substrate Temperatures

AbstractDeep levels in the annealed low-temperature molecular beam epitaxial (LT-MBE) GaAs layer were successfully characterized by using the capacitance deep-level transient spectroscopy (C-DLTS) as well as photocapacitance quenching technique in combination with a unique sample structure. In this work, we have fabricated the samples by inserting the LT-GaAs layer into two n-type semi-conductive layers, like a sandwich (n-LT-n structure), grown at normal substrate temperatures. DLTS measurements have revealed that one electron trap dominates the annealed LT-MBE GaAs. The dominant electron trap was very similar to the so-called EL3 level. Moreover, we found the midgap level appeared upon 800-900°C RTA, although no midgap level was detected in the as-grown n-LT-n sample (annealed at 620°C) and confirmed with photoquenching measurements that it is the EL2 level.

Variations of Electron Traps in MBE AlxGa1−xAs by Rapid Thermal Processing

1988 ◽  
Vol 126 ◽  
Author(s):  
H. Ueda ◽  
A. Kitagawa ◽  
Y. Tokuda ◽  
A. Usami ◽  
T. Wada ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Activation Energies ◽  
Electron Traps ◽  
Molecular Beam Epitaxial ◽  
Transient Spectroscopy

ABSTRACTUsing deep level transient spectroscopy we have studied the variations of electron traps in molecular beam epitaxial (MBE) AlxGa1−xAs by rapid thermal processing (RTP) using halogen lamps. RTP was performed at 700, 800 and 900 °C for 6s under a SiO2 cap and a capless condition. It is found that during RTP the electron traps with the thermal activation energies of 0.89 and 0.99 eV are produced in Al0.lGa0.9As and Al0.3Ga0.7As, respectively. The thermal activation energies of these traps are close to the reported ones for the trap EL2 in AlxGaM1−xAs. Therefore, these traps are probably related to the trap EL2. In the RTP samples under a capless condition, the concentrations of the trap EL2 in AlxGa1−xAs (x=0.1, 0.3) decreases from the surface to the deeper position in MBE layers, while the depth profile of the trap EL2 in GaAs is flat. It is suggested that the origin of the trap EL2 formation in AlxGa1−xAs is different from one in GaAs.

Effects of Rapid Thermal Processing on Mbe GaAs on Si

1989 ◽  
Vol 146 ◽  
Author(s):  
A. Ito ◽  
A. Kitagawa ◽  
Y. Tokuda ◽  
A. Usami ◽  
H. Kano ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Surface Region ◽  
The Other ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Transient Spectroscopy

ABSTRACTVariations of electron traps in molecular-beam-epitaxial (MBE) GaAs layers grown on Si substrates by rapid thermal processing (RTP) have been investigated with deep level transient spectroscopy (DLTS). RTP was performed at 760 – 910 °C for 9s with Si02 encapsulant. In contrast with the layer on GaAs, the traps AI(Ec – 0.65eV) and A2(Ec – 0.81eV) are observed in the layer on Si. The trap EL2h, one of the EL2 family, is produced by RTP in the layer on Si. Some GaAs surfaces were etched to prove the deeper region. In the surface region, the concentrartion of EL2h is comparable to that of EL2 produced by RTP in the layer on GaAs. On the other hand, in ∿ 1 μm below the surface, the concentration of EL2h is about ten times as large as that of EL2. It is speculated that the stress from the GaAs/Si interface enhances the production of the EL2h concentration. In addition to the EL2, the traps R1(Ec – 0.23 eV), R2(Ec – 0.40 eV), R3(Ec – 0.43eV) and R4(Ec – 0.56 eV) are produced by RTP in the GaAs grown on Si.

Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs

1990 ◽  
Vol 67 (3) ◽  
pp. 1380-1383 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Suk‐Ki Min ◽  
Sung Ho Choh ◽  
Susumu Namba
Keyword(s):  
Leakage Current ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy
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