Vacancy-Type Defects in Ion-Implanted Si Studied By Slow Positron Beam

1987 ◽  
Vol 104 ◽  
Author(s):  
P. Hautojdärvi ◽  
P. Huttunen ◽  
J. Mäkinen ◽  
E. Punkka ◽  
A. Vehanen
Keyword(s):  
Laser Annealing ◽  
Positron Beam ◽  
Amorphous Layer ◽  
Slow Positron ◽  
Clear Separation ◽  
Layer Effect ◽  
Variable Energy ◽  
Ion Implanted

ABSTRACTVariable-energy positron beam studies have been made on ion implanted silicon. After 35, 60 and 100 keV H+ implantation a clear separation between vacancy and H atom distributions was found. In 100 keV As+ and P+ implanted Si the damaged layer extends to 300 and 400 nm, respectively, far beyond the the range of implanted atoms and the amorphous layer. Effect of thermal and laser annealing is also discussed.

Isochronal annealing studies on 1.1 MeV Fe ion irradiated RAFM steel using variable energy slow positron beam

2017 ◽  
Author(s):  
Renjith Ramachandran ◽  
C. David ◽  
R. Rajaraman ◽  
S. Abhaya ◽  
B. K. Panigrahi ◽  
...  
Keyword(s):  
Positron Beam ◽  
Isochronal Annealing ◽  
Slow Positron ◽  
Rafm Steel ◽  
Variable Energy

Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam

1991 ◽  
Vol 30 (Part 1, No. 2) ◽  
pp. 201-206 ◽  
Author(s):  
Akira Uedono ◽  
Long Wei ◽  
Chisei Dosho ◽  
Hitoshi Kondo ◽  
Shoichiro Tanigawa ◽  
...  
Keyword(s):  
Positron Beam ◽  
Defect Production ◽  
Variable Energy ◽  
Ion Implanted

Positron spectroscopy of bulk and near-surface defects in semiconductors

1989 ◽  
Vol 67 (8) ◽  
pp. 813-817
Author(s):  
P. Hautojārvi
Keyword(s):  
Positron Annihilation ◽  
Positron Lifetime ◽  
Surface Defects ◽  
Positron Beam ◽  
Near Surface ◽  
Slow Positron ◽  
Positron Spectroscopy ◽  
Positron Lifetime Spectroscopy ◽  
Defects In Semiconductors ◽  
Ion Implanted

The use of positron annihilation to study defects in semiconductors is discussed. Positron-lifetime spectroscopy reveals As vacancies in as-grown GaAs and gives information on ionization levels. The vacancy profiles in ion-implanted Si are investigated by slow positron beam.

scholarly journals Sintering of zirconia-based nanomaterials studied by variable-energy slow-positron beam

2014 ◽  
Vol 505 ◽  
pp. 012020 ◽  
Author(s):  
I Prochazka ◽  
J Cizek ◽  
O Melikhova ◽  
W Anwand ◽  
G Brauer ◽  
...  
Keyword(s):  
Positron Beam ◽  
Slow Positron ◽  
Variable Energy

Light Absorption Effects on the Nd Laser Annealing of Ion Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
P. Baeri ◽  
A.E. Bapbarino ◽  
S.U. Campisano ◽  
M.G. Grimaldi ◽  
G. Foti ◽  
...  
Keyword(s):  
Energy Density ◽  
Heat Flow ◽  
Low Temperature ◽  
Laser Annealing ◽  
Amorphous Material ◽  
Amorphous Layer ◽  
Absorbed Energy ◽  
Pre Treatment ◽  
Crystallization Onset ◽  
Ion Implanted

ABSTRACTThe crystallization onset and the annealing thresholds have been nmeasured as a function of the absorbed energy density in ion implanted amorphous silicon irradiated with nanosecond Nd pulse. Thin amorphous layers (∼500 Å) require higher thresholds ccapared with thick (∼4000 Å) amorphous layers. This result can be explained in terms of balance between absorbed energy and heat flow. For a given thickness of the amorphous layer the thresholds depend on the absorption coefficient of the amorphous material. This last parameter has been varied frcm 104 to 102 CM−1 by low temperature (T<400°C) pre-treatment of the ion implanted sample. The observed drastic variations of both crystallizazion and annealing thresholds agree well with nunerical evaluation of heat flow.

Effect of Sintering on Defects in Yttria Stabilised Zirconia

2012 ◽  
Vol 733 ◽  
pp. 236-239 ◽  
Author(s):  
Ivan Procházka ◽  
Jakub Čížek ◽  
Oksana Melikhova ◽  
Wolfgang Anwand ◽  
Gerhard Brauer ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Subsurface Layer ◽  
Positron Beam ◽  
Annihilation Radiation ◽  
Strong Suppression ◽  
Slow Positron ◽  
Open Volume ◽  
Zirconia Nanopowders ◽  
Variable Energy

A variable energy slow positron beam was utilised to investigate depth dependent effects of sintering on the tetragonal yttria stabilised zirconia nanopowders. Positron implantation was combined with the determination of Doppler broadened profiles of annihilation radiation. The results are consistent with recent positron lifetime data showing that sintering at elevated temperatures leads to a disappearance of pores and a significant grain growth, which is demonstrated by a strong suppression of positronium formation and a substantial decrease in concentration of open volume defects at triple points, respectively, with increasing sintering temperature. An existence of a subsurface layer of a relatively high content of defects was shown in sintered samples and tentatively attributed to arise from a diffusion of open volume defects from the sample interior toward the surface or from a sintering-induced surface modification.

scholarly journals Study on Defects in H+ion Implanted B2 type Fe-Al Alloy using Slow Positron Beam

2012 ◽  
Vol 35 ◽  
pp. 75-79 ◽  
Author(s):  
S. Komagata ◽  
A. Kawasuso ◽  
A. Yabuuchi ◽  
M. Maekawa ◽  
C. Batchulun ◽  
...  
Keyword(s):  
Positron Beam ◽  
Al Alloy ◽  
Slow Positron ◽  
Ion Implanted

scholarly journals A new approach to near-surface positron annihilation analysis of ion irradiated ferritic alloys

2021 ◽  
Author(s):  
Vladimir Krsjak ◽  
Petr Hruška ◽  
Jarmila Degmova ◽  
Stanislav Sojak ◽  
Pavol Noga ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Ion Beam ◽  
Positron Beam ◽  
Ion Beam Irradiation ◽  
Near Surface ◽  
Slow Positron ◽  
New Approach ◽  
Ferritic Alloys ◽  
Positron Annihilation Lifetime ◽  
Variable Energy

The present work provides an innovative approach to the near-surface slow-positron-beam (SPB) study of structural materials exposed to ion-beam irradiation. This approach enables the use of variable-energy positron annihilation lifetime...

Sign in / Sign up

Export Citation Format

Share Document