Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam

1991 ◽  
Vol 30 (Part 1, No. 2) ◽  
pp. 201-206 ◽  
Author(s):  
Akira Uedono ◽  
Long Wei ◽  
Chisei Dosho ◽  
Hitoshi Kondo ◽  
Shoichiro Tanigawa ◽  
...  
Keyword(s):  
Positron Beam ◽  
Defect Production ◽  
Variable Energy ◽  
Ion Implanted

Positron lifetime study on ion-implanted amorphous SiO2 with a variable-energy pulsed positron beam

1994 ◽  
Vol 91 (1-4) ◽  
pp. 410-412 ◽  
Author(s):  
Suzuki Ryoichi ◽  
Kobayashi Yoshinori ◽  
Awazu Koichi ◽  
Mikado Tomohisa ◽  
Chiwaki Mitsukuni ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Positron Beam ◽  
Amorphous Sio2 ◽  
Variable Energy ◽  
Ion Implanted

Vacancy-Type Defects in Ion-Implanted Si Studied By Slow Positron Beam

1987 ◽  
Vol 104 ◽  
Author(s):  
P. Hautojdärvi ◽  
P. Huttunen ◽  
J. Mäkinen ◽  
E. Punkka ◽  
A. Vehanen
Keyword(s):  
Laser Annealing ◽  
Positron Beam ◽  
Amorphous Layer ◽  
Slow Positron ◽  
Clear Separation ◽  
Layer Effect ◽  
Variable Energy ◽  
Ion Implanted

ABSTRACTVariable-energy positron beam studies have been made on ion implanted silicon. After 35, 60 and 100 keV H+ implantation a clear separation between vacancy and H atom distributions was found. In 100 keV As+ and P+ implanted Si the damaged layer extends to 300 and 400 nm, respectively, far beyond the the range of implanted atoms and the amorphous layer. Effect of thermal and laser annealing is also discussed.

Defect Annihilation in Czochralski-Grown Silicon During Out-Diffusion Process Probed with Variable-Energy Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
T. Kitano ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
H. Mikoshiba
Keyword(s):  
High Temperature ◽  
Diffusion Process ◽  
Grown Crystal ◽  
Positron Beam ◽  
Defect Concentration ◽  
Energy Beam ◽  
Oxygen Cluster ◽  
Variable Energy ◽  
Oxygen Atoms

ABSTRACTThe defect annihilation in CZ-crystal was first detected during the process of oxygen out-diffusion, by the positron measurements with a variable-energy beam. The defects, which were related to oxygen atoms such as oxygen cluster, were mainly annihilated at the high temperature, ex., 1150°C. The defect concentration was decreasing down to one tenth, compared with that for an as-grown crystal.

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

Isochronal annealing studies on 1.1 MeV Fe ion irradiated RAFM steel using variable energy slow positron beam

2017 ◽  
Author(s):  
Renjith Ramachandran ◽  
C. David ◽  
R. Rajaraman ◽  
S. Abhaya ◽  
B. K. Panigrahi ◽  
...  
Keyword(s):  
Positron Beam ◽  
Isochronal Annealing ◽  
Slow Positron ◽  
Rafm Steel ◽  
Variable Energy

Characterisation of defects in LiF implanted with Ar+ using variable energy positron beam

2002 ◽  
Vol 192 (1-2) ◽  
pp. 202-205
Author(s):  
E.J. Sendezera ◽  
A.T. Davidson ◽  
P.T. Jili ◽  
M.L. Chithambo ◽  
W. Anwand ◽  
...  
Keyword(s):  
Positron Beam ◽  
Variable Energy

POSITRON INTERACTION IN POLYMERS

2004 ◽  
Vol 19 (23) ◽  
pp. 3951-3959 ◽  
Author(s):  
CORINE BAS ◽  
N. DOMINIQUE ALBÉROLA ◽  
MARIE-FRANCE BARTHE ◽  
JÉRÉMIE De BAERDEMAEKER ◽  
CHARLES DAUWE
Keyword(s):  
Positron Annihilation ◽  
Chemical Structure ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Hole Size ◽  
Doppler Broadening ◽  
Positron Source ◽  
Positron Annihilation Lifetime ◽  
Doppler Broadening Spectra ◽  
Variable Energy

A series of dense copolyimide membranes was characterized using positron annihilation spectroscopy. The positron annihilation lifetime spectroscopy performed on film with a classical positron source gives informations on the positronium fraction formed and also on the hole size within the film. The Doppler broadening spectra (DBS) of the gamma annihilation rays coupled with a variable energy positron beam allow the microstructural analyses as a function of the film depth. Experimental data were also linked to the chemical structure of the polyimides. It was found that the presence of the fluorine atoms strongly affects the positron annihilitation process and especially the DBS responses.

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