scholarly journals Study on Defects in H+ion Implanted B2 type Fe-Al Alloy using Slow Positron Beam

2012 ◽  
Vol 35 ◽  
pp. 75-79 ◽  
Author(s):  
S. Komagata ◽  
A. Kawasuso ◽  
A. Yabuuchi ◽  
M. Maekawa ◽  
C. Batchulun ◽  
...  
Keyword(s):  
Positron Beam ◽  
Al Alloy ◽  
Slow Positron ◽  
Ion Implanted

Positron spectroscopy of bulk and near-surface defects in semiconductors

1989 ◽  
Vol 67 (8) ◽  
pp. 813-817
Author(s):  
P. Hautojārvi
Keyword(s):  
Positron Annihilation ◽  
Positron Lifetime ◽  
Surface Defects ◽  
Positron Beam ◽  
Near Surface ◽  
Slow Positron ◽  
Positron Spectroscopy ◽  
Positron Lifetime Spectroscopy ◽  
Defects In Semiconductors ◽  
Ion Implanted

The use of positron annihilation to study defects in semiconductors is discussed. Positron-lifetime spectroscopy reveals As vacancies in as-grown GaAs and gives information on ionization levels. The vacancy profiles in ion-implanted Si are investigated by slow positron beam.

Vacancy-Type Defects in Ion-Implanted Si Studied By Slow Positron Beam

1987 ◽  
Vol 104 ◽  
Author(s):  
P. Hautojdärvi ◽  
P. Huttunen ◽  
J. Mäkinen ◽  
E. Punkka ◽  
A. Vehanen
Keyword(s):  
Laser Annealing ◽  
Positron Beam ◽  
Amorphous Layer ◽  
Slow Positron ◽  
Clear Separation ◽  
Layer Effect ◽  
Variable Energy ◽  
Ion Implanted

ABSTRACTVariable-energy positron beam studies have been made on ion implanted silicon. After 35, 60 and 100 keV H+ implantation a clear separation between vacancy and H atom distributions was found. In 100 keV As+ and P+ implanted Si the damaged layer extends to 300 and 400 nm, respectively, far beyond the the range of implanted atoms and the amorphous layer. Effect of thermal and laser annealing is also discussed.

Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam

1986 ◽  
Vol 10-12 ◽  
pp. 527-532 ◽  
Author(s):  
Pekka J. Hautojärvi ◽  
H. Huomo ◽  
J. Lahtinen ◽  
J. Mäkinen
Keyword(s):  
Positron Beam ◽  
Slow Positron ◽  
Vacancy Defects ◽  
Ion Implanted

Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

1999 ◽  
Vol 149 (1-4) ◽  
pp. 175-180 ◽  
Author(s):  
J.W. Taylor ◽  
A.S. Saleh ◽  
P.C. Rice-Evans ◽  
A.P. Knights ◽  
C. Jeynes
Keyword(s):  
Depth Profiling ◽  
Positron Beam ◽  
Slow Positron

Vacancy defects in epitaxial La0.7Sr0.3MnO3thin films probed by a slow positron beam

2004 ◽  
Vol 37 (13) ◽  
pp. 1841-1844 ◽  
Author(s):  
S W Jin ◽  
X Y Zhou ◽  
W B Wu ◽  
C F Zhu ◽  
H M Weng ◽  
...  
Keyword(s):  
Positron Beam ◽  
Slow Positron ◽  
Vacancy Defects

Defect characterization of CdTe thin films using a slow positron beam

2007 ◽  
Vol 4 (10) ◽  
pp. 3659-3663 ◽  
Author(s):  
S. Neretina ◽  
D. Grebennikov ◽  
R. A. Hughes ◽  
M. Weber ◽  
K. G. Lynn ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Beam ◽  
Defect Characterization ◽  
Slow Positron ◽  
Cdte Thin Films

Status and Perspectives for a Slow Positron Beam Facility at the HH—NIPNE Bucharest

2009 ◽  
Author(s):  
Mihai Straticiuc ◽  
Liviu Stefan Craciun ◽  
Olimpiu Constantinescu ◽  
Ionica Alina Ghita ◽  
Cristina Ionescu ◽  
...  
Keyword(s):  
Positron Beam ◽  
Slow Positron
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