The Effect of Ion Implantation on the Interdiffusion in Si/Ge Amorphous Artificial Multilayers

1987 ◽  
Vol 103 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
F. Priolo ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Activation Enthalpy ◽  
Liquid Nitrogen Temperature ◽  
Mixing Length ◽  
Different Temperatures ◽  
Implantation Process ◽  
Amorphous Si ◽  
Diffusive Component ◽  
Process Annealing ◽  
Mixed Samples

ABSTRACTAmorphous Si/Ge artificial multilayers have been implanted with Si and B at liquid nitrogen temperature, and partially ion mixed with Ar at different temperatures. In all cases, the square of the mixing length was found to be proportional to the dose. Annealing of Si-implanted samples showed that after relaxation the diffusivity appeared unaffected by the implantation process. Annealing of the B-implanted samples showed an enhancement of the diffusivity at the higher dose. The diffusive component of the square of the mixing length in the Ar-ion mixed samples has an Arrhenius-type temperature dependence, with an activation enthalpy of 0.22 eV.

scholarly journals The Formation of Amorphous Silicon by Light Ion Damage

1985 ◽  
Vol 45 ◽  
Author(s):  
Y. Shih ◽  
J. Washburn ◽  
E.R. Weber ◽  
R. Gronsky
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Point Defect ◽  
Point Defects ◽  
Liquid Nitrogen Temperature ◽  
Paramagnetic Resonance ◽  
High Resolution Tem ◽  
Different Temperatures ◽  
Boron Ions ◽  
Point Defect Clusters

ABSTRACTA model for formation of amorphous silicon by light ion implantation is proposed. It is suggested that accumulation of point defects and/or complexes is required at the initial stage of the amorphization process. Amorphous zones can only form at the end of incoming light ion tracks when the pre-accumulated concentration of point defects reaches a critical value. Depending on the uniformity of the point defect distribution, two possibilities for the second stage of amorphization are suggested when ion implantation is performed at different temperatures.Silicon wafers implanted with boron ions below and above the critical amorphization dose at various temperatures have been investigated using cross section specimens in high resolution TEM. Complementary analyses of these specimens by Electron Paramagnetic Resonance have revealed the presence of dangling bonds in amorphous zones and point defect clusters. Extrinsic stacking faults with 1/3 <111> displacements and other smaller distortions with 1/x<111> displacements were also found to result from the amorphization process. Liquid nitrogen temperature was found to be necessary to cause complete amorphization of silicon by boron ion implantation.

Optimization of Ion Implantation processes for 4H-SiC DIMOSFET

MRS Advances ◽  
2016 ◽  
Vol 1 (55) ◽  
pp. 3673-3678 ◽  
Author(s):  
N. Piluso ◽  
E. Fontana ◽  
M.A. Di Stefano ◽  
G. Litrico ◽  
S. Privitera ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Electrical Characteristic ◽  
Implantation Dose ◽  
Annealing Process ◽  
Considerable Improvement ◽  
Electrical Characteristics ◽  
Different Temperatures ◽  
Implantation Process

AbstractIn this paper the defects generated by ion implantation in 4H-SiC DIMOSFET (Double Implanted MOSFETs), and their evolution after annealing process, have been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence (µPL) and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. The role of the annealing process has been carefully investigated by using different temperatures. It appears fundamental for the restoring of the crystal damage. The effect of the ion implantation dose has been investigated as well. By reducing the source ion implanted dose a large decrease of point defects has been detected and a considerable improvement of the electrical characteristic of the DIMOSFET has been observed.

Composition- and Temperature-Dependence of Ion Mixing in Amorphous Si/Ge Artificial Multilayers

1988 ◽  
Vol 128 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
F. Priolo ◽  
D. C. Jacobson
Keyword(s):  
Temperature Dependence ◽  
Dose Rate ◽  
Diffraction Peak ◽  
Mixing Length ◽  
X Ray Diffraction ◽  
Average Composition ◽  
X Ray ◽  
Composition Modulation ◽  
Amorphous Si ◽  
Diffusive Component

ABSTRACTAmorphous Si/Ge artificial multilayers with a repeat length of around 60A have been partially mixed with 1.5 MeV Ar+ ions at temperatures in the range 77–673K. The change in the intensity of the first X-ray diffraction peak resulting from the composition modulation is used to determine the mixing lengths. The diffusive component of the square of the mixing length, at a given dose, is independent of the dose rate and has an Arrhenius-type temperature dependence, with activation enthalpies between 0.19 and 0.22 eV, depending on the average composition.

Recrystallization Characteristics of Amorphous Si

1988 ◽  
Vol 100 ◽  
Author(s):  
Rodney A. Herring ◽  
Eric M. Fiore
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Single Crystal ◽  
High Energy ◽  
Formation Mechanisms ◽  
Implantation Energy ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Amorphous Si

ABSTRACTThe microstructure of high-energy (0.5–6.0 MEV) As-ion implanted Si and rapid thermal annnealed (RTA'd) Si has been studied by transmission electron microscopy (TEM). The implantations formed buried amorphous layers that recrystallized during RTA at different temperatures and became either single crystal or polycrystalline depending on their implation energy and fluence. At energies > 2.5 MeV and fluences < 1015 cm−2, recrystallization occurred below 400°C and regowth was single crystal. At an energy of 6 MeV and fluence of 5 × 1015 cm−2 recrystallization occurred above 600°C and regrowth was polycrystalline. When the implantation energy and fluence were reduced to 0.5 MeV and 2 × 1014 cm−2, respectively, recrystallization occurred above 600°C and regrowth was polycrystalline. The above results are explained by both the formation mechanisms of amorphous Si resulting from ion implantation and the structural order of a-Si.

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

Studies of Polymer Solvation by Dielectric Relaxation Spectroscopy IV:Polyvinylpyrrolidone in Urea Derivatives at Different Temperatures

1991 ◽  
Vol 46 (11) ◽  
pp. 1001-1008 ◽  
Author(s):  
M. Rohmann ◽  
M. Stockhausen
Keyword(s):  
Activation Enthalpy ◽  
Repeat Unit ◽  
Dielectric Spectrum ◽  
Type Ii ◽  
Polymer Content ◽  
Dielectric Relaxation Spectroscopy ◽  
Urea Derivatives ◽  
Solvation Numbers ◽  
Different Temperatures ◽  
Repeat Unit Of Polymer

AbstractThe dielectric spectrum is measured up to 72 GHz of solutions of polyvinylpyrrolidone (PVP) in tetramethylurea (TMU), dimethylethylene urea and dimethylpropylene urea. Concentrations are up to a monomole fraction of 0.65 (PVP 1200) or 0.5 (PVP 40 000). Measuring temperatures are 20CC for all systems and additionally 40 and 60°C for the TMU solutions. For the description of the results a superposition of Debye type components is used, which are discussed in particular with respect to the solvent contributions. These can be distinguished into three regions: (i) Unaffected bulk-type; (ii) loosely affected, relaxation time and activation enthalpy increasing with increasing polymer content; (iii) quasi bound and moving together with the polymer. The solvation numbers (total of affected solvent per repeat unit of polymer) are about 1.5 to 2.

Synthesis of Iron Oxynitride by Nitrogen Ion Implantation of Iron Oxide

1988 ◽  
Vol 100 ◽  
Author(s):  
S. B. Ogale ◽  
Seema Teli ◽  
Sunita Chopda ◽  
D. M. Phase ◽  
S. M. Kanetkar
Keyword(s):  
Iron Oxide ◽  
Ion Implantation ◽  
Conversion Electron ◽  
Mossbauer Spectroscopy ◽  
Nitrogen Implantation ◽  
Nitrogen Ion Implantation ◽  
Conversion Electron Mössbauer Spectroscopy ◽  
Conversion Electron Mossbauer Spectroscopy ◽  
Implantation Process ◽  
Nitrogen Ion

ABSTRACTThe effect of N2+ ion implantation in ∝-Fe2O3 has been investigated by means of Conversion Electron Mossbauer Spectroscopy (CEMS). It Is shown that at a dose value of 1×1017 ions/cm2 and 3×1017 Ions/cm2 the samples exhibit new Interesting hyperfine features which can not be ascribed to known oxide or nitride phases. It Is thus concluded that Iron Oxynitrlde Is formed by the nitrogen Implantation process.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

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