Optimization of Ion Implantation processes for 4H-SiC DIMOSFET

MRS Advances ◽  
2016 ◽  
Vol 1 (55) ◽  
pp. 3673-3678 ◽  
Author(s):  
N. Piluso ◽  
E. Fontana ◽  
M.A. Di Stefano ◽  
G. Litrico ◽  
S. Privitera ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Electrical Characteristic ◽  
Implantation Dose ◽  
Annealing Process ◽  
Considerable Improvement ◽  
Electrical Characteristics ◽  
Different Temperatures ◽  
Implantation Process

AbstractIn this paper the defects generated by ion implantation in 4H-SiC DIMOSFET (Double Implanted MOSFETs), and their evolution after annealing process, have been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence (µPL) and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. The role of the annealing process has been carefully investigated by using different temperatures. It appears fundamental for the restoring of the crystal damage. The effect of the ion implantation dose has been investigated as well. By reducing the source ion implanted dose a large decrease of point defects has been detected and a considerable improvement of the electrical characteristic of the DIMOSFET has been observed.

Ion Implantation Defects in 4H-SiC DIMOSFET

2016 ◽  
Vol 858 ◽  
pp. 418-421 ◽  
Author(s):  
Enzo Fontana ◽  
Nicolò Piluso ◽  
Alfio Russo ◽  
Simona Lorenti ◽  
Cinzia M. Marcellino ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Electrical Characteristic ◽  
Source Region ◽  
Considerable Improvement ◽  
Large Reduction ◽  
Electrical Characteristics ◽  
Implantation Process ◽  
Ion Implanted

In this paper the influence of point defects generated by the ion implantation process in 4H-SiC DIMOSFET has been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. In particular it has been observed that a reduction of the source ion implanted dose produces a large reduction of point defects in the source region and a considerable improvement of the electrical characteristic of the DIMOSFET.

scholarly journals The Formation of Amorphous Silicon by Light Ion Damage

1985 ◽  
Vol 45 ◽  
Author(s):  
Y. Shih ◽  
J. Washburn ◽  
E.R. Weber ◽  
R. Gronsky
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Point Defect ◽  
Point Defects ◽  
Liquid Nitrogen Temperature ◽  
Paramagnetic Resonance ◽  
High Resolution Tem ◽  
Different Temperatures ◽  
Boron Ions ◽  
Point Defect Clusters

ABSTRACTA model for formation of amorphous silicon by light ion implantation is proposed. It is suggested that accumulation of point defects and/or complexes is required at the initial stage of the amorphization process. Amorphous zones can only form at the end of incoming light ion tracks when the pre-accumulated concentration of point defects reaches a critical value. Depending on the uniformity of the point defect distribution, two possibilities for the second stage of amorphization are suggested when ion implantation is performed at different temperatures.Silicon wafers implanted with boron ions below and above the critical amorphization dose at various temperatures have been investigated using cross section specimens in high resolution TEM. Complementary analyses of these specimens by Electron Paramagnetic Resonance have revealed the presence of dangling bonds in amorphous zones and point defect clusters. Extrinsic stacking faults with 1/3 <111> displacements and other smaller distortions with 1/x<111> displacements were also found to result from the amorphization process. Liquid nitrogen temperature was found to be necessary to cause complete amorphization of silicon by boron ion implantation.

GaN P-N Structures Fabricated by Mg ION Implantation

1998 ◽  
Vol 537 ◽  
Author(s):  
E.V. Kalinina ◽  
V.A. Solov'ev ◽  
A.S. Zubrilov ◽  
V.A. Dmitriev ◽  
A.P. Kovarsky
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Scattered Electron ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Electron Beam Induced Current ◽  
P Type ◽  
Secondary Ion

AbstractIn this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2 × 1016 cm2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

Exafs Studies of Ion Implanted Bismuth

1984 ◽  
Vol 41 ◽  
Author(s):  
E. M. Kunoff ◽  
M. S. Dresselhaus ◽  
Y. H. Kao
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Nearest Neighbor ◽  
Local Environment ◽  
Sample Surface ◽  
High Energy ◽  
Synchrotron Source ◽  
Different Temperatures ◽  
Total Fluence ◽  
Nearest Neighbor Distances

AbstractMagnetorefiection and preliminary Rutherford Backscattering channeling experiments indicate that point defects induced in the bismuth lattice by ion implantation are largely annealed out during the implantation process due to its low melting temperature of 271.3°C. These experiments also show that the implanted ions cause long range strains in the crystal. Single crystal bismuth samples have been implanted at low temperatures (from 273°K down to 77°K) with 75 As to a total fluence of 5 × 1016/cm2 at energies ranging from 50 keV to 200 keV to yield an approximately constant arsenic profile from the sample surface to a depth of 625 Å. To study the local environment of the implanted As ions, EXAFS measurements have been made at the Cornell High Energy Synchrotron Source (CHESS). From these data, we obtain a comparison of the As nearest neighbor distances in samples implanted at different temperatures. We discuss the effect of sample temperature during implantation on these properties. This work represents the first use of EXAFS to characterize annealing of implantation-induced lattice defects during the process of ion implantation.

The Effect of Ion Implantation on the Interdiffusion in Si/Ge Amorphous Artificial Multilayers

1987 ◽  
Vol 103 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
F. Priolo ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Activation Enthalpy ◽  
Liquid Nitrogen Temperature ◽  
Mixing Length ◽  
Different Temperatures ◽  
Implantation Process ◽  
Amorphous Si ◽  
Diffusive Component ◽  
Process Annealing ◽  
Mixed Samples

ABSTRACTAmorphous Si/Ge artificial multilayers have been implanted with Si and B at liquid nitrogen temperature, and partially ion mixed with Ar at different temperatures. In all cases, the square of the mixing length was found to be proportional to the dose. Annealing of Si-implanted samples showed that after relaxation the diffusivity appeared unaffected by the implantation process. Annealing of the B-implanted samples showed an enhancement of the diffusivity at the higher dose. The diffusive component of the square of the mixing length in the Ar-ion mixed samples has an Arrhenius-type temperature dependence, with an activation enthalpy of 0.22 eV.

scholarly journals GaN p-n Structures Fabricated by Mg Ion Implantation

1999 ◽  
Vol 4 (S1) ◽  
pp. 751-756 ◽  
Author(s):  
E.V. Kalinina ◽  
V.A. Solov’ev ◽  
A.S. Zubrilov ◽  
V.A. Dmitriev ◽  
A.P. Kovarsky
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Scattered Electron ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Electron Beam Induced Current ◽  
P Type ◽  
Secondary Ion

AbstractIn this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2×1016 cm−2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

2006 ◽  
Vol 911 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Fabio Bergamini ◽  
Mariaconcetta Canino ◽  
Antonella Poggi ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Heating Rate ◽  
High Purity ◽  
Annealing Process ◽  
Electrical Characteristics ◽  
Leakage Currents ◽  
Total Fluence ◽  
Implantation Process ◽  
Constant Heating ◽  
Post Implantation

AbstractStructural, morphological and electrical characteristics of Al-implanted p+/n 4H-SiC diodes are compared for the same implantation process and post implantation annealing with identical stationary and cooling cycles but different heating velocity. Al+ ions were implanted at 400°C, with energies in the range 250-350 keV and total fluence of 1.2×1015 cm−2. Post implantation annealing processes were done at 1600°C for 30 min with a constant heating velocity in the range 7 – 40°C/sec and an abrupt cooling cycle. Gas in the annealing ambient was high purity Ar. The Al depth profile of annealed and as implanted samples were equal except for concentrations below 10E17 cm−3 where the former profiles showed a diffusion tail. With the increase of the heating velocity of the post implantation annealing process, sheet resistance of the Al implanted layer and diode leakage currents decrease while the surface roughness increases.

Plasma immersion ion implantation characteristics with q-nonextensive electron velocity distribution

2015 ◽  
Vol 81 (3) ◽  
Author(s):  
N. Navab Safa ◽  
H. Ghomi ◽  
A. R. Niknam
Keyword(s):  
Distribution Function ◽  
Ion Implantation ◽  
Fluid Model ◽  
Electron Distribution Function ◽  
Implantation Dose ◽  
Electron Velocity ◽  
Plasma Parameters ◽  
Electron Velocity Distribution ◽  
Implantation Process ◽  
Plasma Immersion Ion Implantation

The plasma immersion ion implantation process is investigated in the presence ofq–nonextensive electrons by using a one-dimensional fluid model. The effect of the nonextensivity parameter,q, on the plasma parameters and sheath dynamics during the implantation process is studied. The results show that the implantation dose can be enhanced in the presence of energetic electrons at the tail of the distribution function. Different parameters of plasma such as sheath thickness, ion velocity and ion density show more change at the larger values of theq–parameter. Furthermore, the results of simulation tend to what is predicted by the Maxwellian electron distribution function (q= 1).

Effects of Defects in GaAs/AlGaAs Quantum Wells

1993 ◽  
Vol 325 ◽  
Author(s):  
O.L. Russo ◽  
V. Rehn ◽  
T.W. Nee ◽  
K.A. Dumas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Wells ◽  
Point Defects ◽  
Molecular Beam ◽  
Transition Probability ◽  
Band Energy ◽  
Transmission Electron ◽  
Different Temperatures

AbstractHigh Resolution transmission electron microscopy (HRTEM) and electroreflectance (ER) were used to explain the role of point defects in the molecular beam epitaxy (MBE) grown PIN structure containing five coupled (50Å/28Å) GaAs/AlxGa1−xAs quantum wells with x = 0.25. The ER data were taken at 300K and 77K for energies from 1.4 to 2.1 eV from which sub-band energy transitions were determined. Data at 300K showed three transitions whereas four were readily resolved at 77K. HRTEM data determined the uniformity of both the wells and barriers to be within ± 2Å, which neither caused appreciable broadening nor a decrease in the transition probability. However, the data at different temperatures suggest that point defects may be responsible for the decrease in the transition probability.

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