Characterization of MBE Grown GaAs With Isoelectronic Doping of Indium or Antimony

1987 ◽  
Vol 102 ◽  
Author(s):  
A.Z. Li ◽  
H.K. Kim ◽  
J. Jeong ◽  
J. Zhao ◽  
T.E. Schlesinger ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Growth Temperature ◽  
Deep Trap ◽  
Atomic Percent ◽  
Electron Traps ◽  
Trap Concentration ◽  
Dlts Spectrum ◽  
Isoelectronic Doping ◽  
Additional Improvement

ABSTRACTThe effects of In and Sb on the concentration of electron traps in MBE grown n-type GaAs are investigated. Two traps, labeled M3 and M6, dominate the DLTS spectrum. It is observed that at growth temperatures of 500 and 550° C their concentrations can be reduced by up to two orders of magnitude by the introduction of a few atomic percent of either In or Sb. The percent In or Sb producing the lowest trap concentrations decreases with increasing substrate temperature and thus for a substrate growth temperature of 600° C no additional improvement in the deep trap concentration is observed.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.D. HUNT ◽  
N. LEWIS ◽  
E.L. HALL ◽  
L.G. JTURNER ◽  
L.J. SCHOWALTER ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Reactive Deposition ◽  
Ion Channeling ◽  
Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Raman Characterization of Protocrystalline Silicon Films

2009 ◽  
Vol 1153 ◽  
Author(s):  
A. J. Syllaios ◽  
S. K. Ajmera ◽  
G. S. Tyber ◽  
C. L. Littler ◽  
R. E. Hollingworth
Keyword(s):  
Substrate Temperature ◽  
Dopant Concentration ◽  
Hydrogen Dilution ◽  
Spectral Peaks ◽  
And Performance ◽  
And Shifts ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Raman Spectral

AbstractAn increasingly important application of thin film hydrogenated amorphous silicon (α-Si:H) is in infrared detection for microbolometer thermal imaging arrays. Such arrays consist of thin α-Si:H films that are integrated into a floating thermally isolated membrane structure. Among the α-Si:H material properties affecting the design and performance of microbolometers is the microstructure. In this work, Raman spectroscopy is used to study changes in the microstructure of protocrystalline p-type α-Si:H films grown by PECVD as substrate temperature, dopant concentration, and hydrogen dilution are varied. The films exhibit the four Raman spectral peaks corresponding to the TO, LO, LA, and TA modes. It is found that the TO Raman peak becomes increasingly well defined (decreasing line width and increasing intensity), and shifts towards the crystalline TO energy as substrate temperature is increased, H dilution of the reactants is increased, or as dopant concentration is decreased.

Characterization of Nano-Crystalline Diamond like Carbon (DLC) Films with Substrate Temperature Using Dense Plasma Focusing Method

2010 ◽  
Author(s):  
Vikram S Yadav ◽  
Devendra K Sahu ◽  
Manveer Singh ◽  
Kuldeep Kumar ◽  
D. C. Dhubkarya ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Dense Plasma ◽  
Diamond Like Carbon ◽  
Nano Crystalline

Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

2011 ◽  
Vol 1396 ◽  
Author(s):  
Suzuka Nishimura ◽  
Muneyuki Hirai ◽  
Kazutaka Terashima
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Cubic Gan ◽  
Gan On Si

ABSTRACTWe have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide (BP) buffer crystals. The growth of GaN was carried out by MOVPE on BP/Si(100) substrate of 2 inches in diameter. By the several evaluations, it was recognized that when the growth temperature is around 750˚C, c-GaN was dominant. The typical growth rate was about 0.5μm/h. We obtained c-GaN layer over 2.5μm thick without cracking.

Growth and Characterization of Single Crystal Epitaxial CoGa on MBE Grown III-V Semiconductors

1988 ◽  
Vol 144 ◽  
Author(s):  
K. C. Garrison ◽  
C. J. Palmstrøm ◽  
R. A. Bartynski
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Structural Quality ◽  
High Quality ◽  
Auger Analysis ◽  
Post Deposition

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.

Growth and Characterization of GaN on Si(111)

1994 ◽  
Vol 339 ◽  
Author(s):  
A. Ohtani ◽  
K. S. Stevens ◽  
R. Beresford
Keyword(s):  
Growth Temperature ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Ion Density ◽  
Nitrogen Ion ◽  
Gan On Si ◽  
Aln Buffer

ABSTRACTWurtzite GaN films on AlN buffer layers were grown on Si (111) by electron cyclotron resonance microwave plasma assisted MBE (ECR-MBE). High resolution x-ray diffraction studies indicate that the mosaic disorder decreases with increasing growth temperature. The grain size is related to the growth temperature. The best (0002) diffraction peak full width at half maximum was 22 min. for a film 1.7 μm thick. Prominent exciton luminescence is observed at 3.46 eV at 10 K.The plasma I-V characteristics were measured with a Langmuir probe near the growth position. The nitrogen ion density has been extracted from the data, and is a strong function of the N2 flow rate, the microwave power and the aperture size of the ECR source. The crystal quality of AlN is strongly affected by the plasma conditions.

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