Characterization of Nano-Crystalline Diamond like Carbon (DLC) Films with Substrate Temperature Using Dense Plasma Focusing Method

2010 ◽  
Author(s):  
Vikram S Yadav ◽  
Devendra K Sahu ◽  
Manveer Singh ◽  
Kuldeep Kumar ◽  
D. C. Dhubkarya ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Dense Plasma ◽  
Diamond Like Carbon ◽  
Nano Crystalline

scholarly journals Characterization of Ultra-Thin Diamond-Like Carbon Films by SEM/EDX

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 729
Author(s):  
Chanida Puttichaem ◽  
Guilherme P. Souza ◽  
Kurt C. Ruthe ◽  
Kittipong Chainok
Keyword(s):  
Regression Models ◽  
Hard Disk Drives ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Disk Drives ◽  
Cross Sectional ◽  
Protective Films ◽  
High Throughput Method ◽  
Multiple Regression Models

A novel, high throughput method to characterize the chemistry of ultra-thin diamond-like carbon films is discussed. The method uses surface sensitive SEM/EDX to provide substrate-specific, semi-quantitative silicon nitride/DLC stack composition of protective films extensively used in the hard disk drives industry and at Angstrom-level. SEM/EDX output is correlated to TEM to provide direct, gauge-capable film thickness information using multiple regression models that make predictions based on film constituents. The best model uses the N/Si ratio in the films, instead of separate Si and N contributions. Topography of substrate/film after undergoing wear is correlatively and compositionally described based on chemical changes detected via the SEM/EDX method without the need for tedious cross-sectional workflows. Wear track regions of the substrate have a film depleted of carbon, as well as Si and N in the most severe cases, also revealing iron oxide formation. Analysis of film composition variations around industry-level thicknesses reveals a complex interplay between oxygen, silicon and nitrogen, which has been reflected mathematically in the regression models, as well as used to provide valuable insights into the as-deposited physics of the film.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Characterization of diamond-like carbon films by SEM, XRD and Raman spectroscopy

2010 ◽  
Vol 256 (21) ◽  
pp. 6403-6407 ◽  
Author(s):  
Hua Pang ◽  
Xingquan Wang ◽  
Guling Zhang ◽  
Huan Chen ◽  
Guohua Lv ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Carbon Films ◽  
Diamond Like Carbon
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