Study of Initial Stages of Heteroepitaxy Using Graded Thickness Samples

1987 ◽  
Vol 102 ◽  
Author(s):  
D. K. Biegelsen ◽  
F. A. Ponce ◽  
B. S. Krusor ◽  
J. C. Tramontana ◽  
R. D. Yingling
Keyword(s):  
Clean Surface ◽  
Growth Mechanisms ◽  
Heteroepitaxial Growth ◽  
Continuous Evolution ◽  
Gaas On Si ◽  
Sample Deposition ◽  
Graded Thickness ◽  
Nucleation Growth

ABSTRACTIn this paper we introduce the technique of graded thickness sample deposition to study the heteroepitaxial growth mechanisms of GaAs on Si. We can observe the continuous evolution from the initial clean surface, through nucleation, growth and coalescence of the deposited material.

Initial Stages of GaAs Epitaxy on Si

1988 ◽  
Vol 116 ◽  
Author(s):  
O. K. Biegelsen ◽  
F. A. Ponce ◽  
B. S. Krusor ◽  
J. C. Tramontana ◽  
R. D. Yingling ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Nucleation And Growth ◽  
Heteroepitaxial Growth ◽  
Island Growth ◽  
Passivating Layer ◽  
Gaas On Si ◽  
Graded Thickness ◽  
Substrate Temperatures

AbstractThe initial stages of heteroepitaxial growth of GaAs on Si have been observed using a technique of graded-thickness sample deposition. We find that an initial uniform passivating layer is grown, followed by three-dimensional nucleation determined by Ga diffusion and clustering, followed in turn by an interfacial reaction limited island growth mechanism. Results for various substrate temperatures and substrate orientations are consistent with the simple models of nucleation and growth.

Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

2006 ◽  
Vol 295 (2) ◽  
pp. 103-107 ◽  
Author(s):  
Wu-Yih Uen ◽  
Zhen-Yu Li ◽  
Yen-Chin Huang ◽  
Meng-Chu Chen ◽  
Tsun-Neng Yang ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
Gaas On Si

Growth of Gaas on Si Using Algap Intermediate Layer

1989 ◽  
Vol 148 ◽  
Author(s):  
N. Noto ◽  
S. Nozaki ◽  
T. Egawa ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Chemical Vapor ◽  
Gaas Layer ◽  
Organic Chemical ◽  
Heteroepitaxial Growth ◽  
Etch Pit ◽  
Gaas On Si ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe have studied heteroepitaxial growth of GaAs on Si using an AlxGa1−xP intermediate layer in an atmospheric-pressure metal organic chemical vapor deposition (NOCVD) reactor. The crystallinity of the GaAs layer depends on AlP composition(x) of the intermediate layer. The bett crystal quality of GaAs layer is obtained when the AlP composition(x) of the intermediate layer is close to 0.5. The X-ray FWHX of 180 arcs and the etch pit density (EPD) of 2.5 × 107cm−2 were obtained in this GaAs/AlGaP/Si structure.

Effects of Silicon Misorientation Angle on the Rf and Dc Characteristics of GaAs-on-Si Mesfets

1995 ◽  
Vol 379 ◽  
Author(s):  
Christos Papavassiliou ◽  
G. Constantinidis ◽  
N. Kornilios ◽  
A. Georgakilas ◽  
E. LÖchterman ◽  
...  
Keyword(s):  
Misorientation Angle ◽  
Defect Density ◽  
Initial Study ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Mbe Growth ◽  
Gaas Mesfet ◽  
Gaas On Si ◽  
Dc Characteristics

ABSTRACTA systematic experimental investigation has been undertaken for the optimization of the wafer parameters and processing for silicon wafers intended for use as substrates for MBE growth, with emphasis on heteroepitaxial growth of GaAs-on- Si. Within this investigation, results are presented of an initial study focused on the optimization of the magnitude of the misorientation angle towards a <110> direction for the growth of GaAs on (001) Si wafers. This angle controls the structure of the stepped (001)Si surface and can influence the defect density and surface smoothness of the GaAs-on-Si layers. Silicon substrates misoriented from 0 deg. up to 9 deg. were cut to specification and subsequently used for the epitaxial growth of GaAs MESFET structures. MESFETs were fabricated and their dc and RF characteristics compared. The resistivity of the GaAs-on-Si buffer layers was evaluated and correlated to the results from device characterization. This work presents the effects of the magnitude of the angle of misorientation in the range from 0 to 9 deg.

GROWTH MODES AND DEFECTS OF MANGANESE MERCURY THIOCYANATE CRYSTALS OBSERVED BY AFM

2009 ◽  
Vol 16 (01) ◽  
pp. 19-22
Author(s):  
Y. L. GENG ◽  
Z. H. SUN
Keyword(s):  
Atomic Force Microscopy ◽  
Screw Dislocation ◽  
Stacking Faults ◽  
Nucleation And Growth ◽  
Controlled Growth ◽  
Growth Mechanisms ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Modes ◽  
Nucleation Growth

Growth mechanisms and defects formation of the manganese mercury thiocyanate (MMTC) crystal have been investigated by atomic force microscopy (AFM). Both screw dislocation controlled growth and 2D nucleation growth occur on the {110} faces. Stacking faults are observed among dislocation hillocks and the formation of them probably results from the different crystallization orientations of different spirals. Hollow channels are found around the nucleation islands and the formation of them is due to the instability of the interface generated by the rapid nucleation and growth speeds.

Two Types of Phase Separation and Crystal Nucleation-Growth Mechanisms for Machinable Glass Ceramic

2007 ◽  
Vol 544-545 ◽  
pp. 929-932
Author(s):  
Xin Pei Ma ◽  
Guang Xin Li ◽  
Jian Feng Yang ◽  
Zhi Hao Jin
Keyword(s):  
Phase Separation ◽  
Fine Particles ◽  
Glass Ceramics ◽  
Nucleation And Growth ◽  
Crystal Nucleation ◽  
Growth Mechanisms ◽  
Phase Precipitation ◽  
Atom Diffusion ◽  
Two Phases ◽  
Nucleation Growth

Machinable mica glass ceramics with more ZnO and B2O3 showed the phase separation by spinodal decomposition. the size of two phases formed by phase separation is in micron meter order. The nucleation and growth of crystal is performed through the diffusion of atoms. Another kind of materials with no ZnO and B2O3 addition behaves different mechanism of phase separation in terms of nucleation and growth. Many fine particles are obtained after the phase separation , the size of which is less than 100nm in diameter. Subsequently nucleation and growth in the crystallization is accomplished by aggregation and unification of the granular phase precipitation. The mechanism of the aggregation and unification nucleation-growth is different from one controlled by atom diffusion in nature. The different mechanisms in crystal nucleation and growth, caused by the composition changing.

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