Initial Stages of GaAs Epitaxy on Si

1988 ◽  
Vol 116 ◽  
Author(s):  
O. K. Biegelsen ◽  
F. A. Ponce ◽  
B. S. Krusor ◽  
J. C. Tramontana ◽  
R. D. Yingling ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Nucleation And Growth ◽  
Heteroepitaxial Growth ◽  
Island Growth ◽  
Passivating Layer ◽  
Gaas On Si ◽  
Graded Thickness ◽  
Substrate Temperatures

AbstractThe initial stages of heteroepitaxial growth of GaAs on Si have been observed using a technique of graded-thickness sample deposition. We find that an initial uniform passivating layer is grown, followed by three-dimensional nucleation determined by Ga diffusion and clustering, followed in turn by an interfacial reaction limited island growth mechanism. Results for various substrate temperatures and substrate orientations are consistent with the simple models of nucleation and growth.

Tem Characterization of Highly Oriented Diamond Films on (001) Silicon Synthesized by Bias Enhanced Nucleation Technique

1996 ◽  
Vol 458 ◽  
Author(s):  
Seung-Joon Jeon ◽  
Arun Kumar Chawla ◽  
Young-Joon Baik ◽  
Changmo Sung
Keyword(s):  
Surface Morphology ◽  
Growth Mechanism ◽  
Silicon Substrate ◽  
Three Dimensional ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Texture Formation ◽  
Tem Characterization ◽  
Nucleation And Growth Mechanism

ABSTRACTHighly oriented diamond films were deposited on a (001) silicon substrate by bias enhanced MPCVD technique. Three-dimensional TEM characterizations were carried out to understand the nucleation and growth mechanism of diamond grains. The surface morphology, defects, and misorientations of diamond films were compared as a function of synthesizing temperatures and thickness of the films. From our experimental results the texture formation mechanism of diamond films is discussed.

Study of Initial Stages of Heteroepitaxy Using Graded Thickness Samples

1987 ◽  
Vol 102 ◽  
Author(s):  
D. K. Biegelsen ◽  
F. A. Ponce ◽  
B. S. Krusor ◽  
J. C. Tramontana ◽  
R. D. Yingling
Keyword(s):  
Clean Surface ◽  
Growth Mechanisms ◽  
Heteroepitaxial Growth ◽  
Continuous Evolution ◽  
Gaas On Si ◽  
Sample Deposition ◽  
Graded Thickness ◽  
Nucleation Growth

ABSTRACTIn this paper we introduce the technique of graded thickness sample deposition to study the heteroepitaxial growth mechanisms of GaAs on Si. We can observe the continuous evolution from the initial clean surface, through nucleation, growth and coalescence of the deposited material.

AFM Observations on the Growth Mechanisms of Epitaxial Perovskite Oxide SrRuO3 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
R. A. Rao ◽  
Q. Gan ◽  
C. B. Eom
Keyword(s):  
Thin Films ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Plane Domain ◽  
Perovskite Oxide ◽  
X Ray Diffraction ◽  
Island Growth ◽  
Step Flow ◽  
Atomic Force ◽  
Step Flow Growth

ABSTRACTThe growth mechanism and surface morphology of epitaxial SrRuO3 thin films deposited on exact and vicinal (001) SrTiO3 and exact (001) LaAlO3 substrates has been studied. Vicinal substrates with miscut angle, a, up to 4° toward [010] direction were used. Atomic force microscope images show that the films grown on exact (001) SrTiO3 substrate had a growth mechanism involving two dimensional nucleation. In contrast, characteristic step patterns were observed on the films deposited on vicinal substrates, suggesting that these films had a step flow growth mode. The films deposited on exact (001) LaAlO3 substrates had a three dimensional island growth, due to the incoherence between the film and substrate lattice. These results were found to be consistent with the results of x-ray diffraction analysis of the in-plane domain structure.

Formation of coherent twins in YBa2Cu3O7–δ superconductors

1989 ◽  
Vol 4 (4) ◽  
pp. 795-801 ◽  
Author(s):  
C. J. Jou ◽  
J. Washburn
Keyword(s):  
Oxygen Uptake ◽  
Growth Mechanism ◽  
Oxygen Uptake Rate ◽  
Nucleation And Growth ◽  
Electron Microscopic ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
Twin Formation ◽  
Boundary Model ◽  
Nucleation And Growth Mechanism

A nucleation-and-growth mechanism for the twin formation in YBa2Cu3O7–δ superconductors based on the oxygen uptake rate curve and published transmission electron microscopic observations is proposed together with an oxygen-depleted twin boundary model. The difficulty of reaching stoichiometric YBa2Cu3O7 is explained.

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

2006 ◽  
Vol 295 (2) ◽  
pp. 103-107 ◽  
Author(s):  
Wu-Yih Uen ◽  
Zhen-Yu Li ◽  
Yen-Chin Huang ◽  
Meng-Chu Chen ◽  
Tsun-Neng Yang ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
Gaas On Si
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