Band-Edge Luminescence of MOCVD GaAs Grown Directly on Silicon

1987 ◽  
Vol 102 ◽  
Author(s):  
M. G. Lamont ◽  
T. D. Harris ◽  
R. Sauer ◽  
R. M. Lum ◽  
J. K. Klingert
Keyword(s):  
Temperature Variation ◽  
Valence Band ◽  
Selective Excitation ◽  
Substrate Thickness ◽  
Spectral Features ◽  
Photoluminescence Excitation ◽  
Si Substrates ◽  
Band Edge Luminescence ◽  
Split Valence ◽  
Thick Layers

ABSTRACTWe report a detailed study using photoluminescence and photoluminescence excitation of MOCVD GaAs grown directly on Si substrates. Temperature variation and selective excitation allow reliable assignment of spectral features. This assignment permits measurements of strain and strain uniformity, identification of impurities, and assessment of general materials quality. In 2–5μm thick layers similar spectra are observed with little variation from substrate character. Most samples show one of the two split valence band features plus defect recombination, always including carbon. Strain uniformity varies widely and correlates with substrate thickness. The range of spectra observed from a variety of samples, and guidelines for interpretation of nonresonantly excited spectra will be discussed.

Near Gap Photoluminescence of GaAs Grown Directly on InP

1989 ◽  
Vol 145 ◽  
Author(s):  
M. Lamont Schnoes ◽  
T.D. Harris ◽  
W.S. Hobson ◽  
R. M. Lum ◽  
J. K. Klingert
Keyword(s):  
Thermal Expansion ◽  
Valence Band ◽  
Spectral Features ◽  
Thermal Expansion Mismatch ◽  
Photoluminescence Excitation ◽  
Carbon Impurity ◽  
The Third ◽  
Inp Substrates ◽  
Split Valence ◽  
Good Agreement

AbstractWe present a detailed photoluminescence and photoluminescence excitation study of GaAs grown directly on InP substrates by MOCVD. Reliable peak assignments are determined. With these peak assignments, we measure strain and strain uniformity, identify impurities, and assess material quality. Most samples exhibit three distinct spectral features. The two highest energy features are the strain split valence band, the third feature is a carbon impurity. The observed splitting is in good agreement with the value predicted from the thermal expansion mismatch.

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Valence Band Splitting in Wurtzite InGaAs Nanoneedles Studied by Photoluminescence Excitation Spectroscopy

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11440-11446 ◽  
Author(s):  
Xiaodong Wang ◽  
Ilaria Zardo ◽  
Danče Spirkoska ◽  
Sara Yazji ◽  
Kar Wei Ng ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoluminescence Excitation ◽  
Band Splitting ◽  
Valence Band Splitting

scholarly journals Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy

2011 ◽  
Author(s):  
H. E. Jackson ◽  
S. Perera ◽  
K. Pemasiri ◽  
L. M. Smith ◽  
J. Yarrison-Rice ◽  
...  
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Photoluminescence Excitation ◽  
Valence Band Structure

Electronic Structure and Magnetic Properties of Iron Doped TiO2 (Rutile): XPS Measurements and CPA Calculations

2014 ◽  
Vol 215 ◽  
pp. 28-34 ◽  
Author(s):  
Michael A. Korotin ◽  
Nikolay A. Skorikov ◽  
Ernst Z. Kurmaev ◽  
Dmitry A. Zatsepin ◽  
Seif O. Cholakh
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Band Gap ◽  
Valence Band ◽  
Coherent Potential Approximation ◽  
Photoelectron Spectra ◽  
Cation Substitution ◽  
Spectral Features ◽  
Potential Approximation ◽  
X Ray

X-ray photoelectron spectra of TiO2:Fe are measured. Electronic structure and magnetic properties of rutile doped by iron are calculated in frames of the coherent potential approximation. The main experimental spectral features of TiO2:Fe such as heterovalent cation substitution (Fe3+→Ti4+), decreasing of the band gap value and appearance of additional features at the bottom and top of X-ray photoelectron spectra of valence band in comparison with those for undoped TiO2 are described.

scholarly journals Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N

2011 ◽  
Vol 99 (2) ◽  
pp. 021903 ◽  
Author(s):  
Martin Feneberg ◽  
Marcus Röppischer ◽  
Norbert Esser ◽  
Christoph Cobet ◽  
Benjamin Neuschl ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoluminescence Excitation

The optical properties and chemical decomposition of lead iodide

1964 ◽  
Vol 280 (1383) ◽  
pp. 566-585 ◽  
Keyword(s):  
Optical Properties ◽  
Absorption Spectrum ◽  
Valence Band ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Irradiation Damage ◽  
Lead Iodide ◽  
Chemical Decomposition ◽  
Excitation Processes ◽  
Split Valence

The optical properties of lead iodide have been measured and the fundamental absorption spectrum is interpreted in terms of ionization and excitation processes. These processes may be regarded as transitions from a split valence band to the conduction band and to exciton levels lying above and below the minimum of the conduction band. This inter­pretation is supported by measurements of photoconductivity and photodecomposition. Two mechanisms are suggested to explain the occurrence of photodecomposition and electron irradiation damage in this substance.

Photoluminescence Study of GaAs/AlGaAs Quantum Wells Grown On Si Substrates

1987 ◽  
Vol 91 ◽  
Author(s):  
C. Jagannath ◽  
S. Zemon ◽  
P. Norris ◽  
B.S. Elman ◽  
S.K. Shastry
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Biaxial Tension ◽  
Light Hole ◽  
Experimental Results ◽  
Photoluminescence Excitation ◽  
Exciton Energy ◽  
Photoluminescence Study ◽  
Si Substrates ◽  
Gaas Substrates

ABSTRACTPhotoluminescence and photoluminescence excitation spectroscopies are utilized to study excitons in GaAs/AlGaAs quantum wells (QW's) fabricated using MBE on MOCVD grown GaAs/Si. The experimental results are understood in terms of the biaxial tension of approximately 3 kbar present in the plane of growth for both the QW's and the GaAs buffer. An important consequence of the biaxial tension is that for QW's with well widths larger than ≈15 nm the light- and heavy- hole sub-bands cross each other in energy. This results in the light-hole exciton energy being lower than that of the heavy-hole exciton, opposite to the case of QW's grown on GaAs substrates.

Heterogeneous Strain Relaxation in GaAs on Si (100)

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Freundlich ◽  
G. Neu ◽  
A. Leycuras ◽  
R. Carles ◽  
C. Verie
Keyword(s):  
Residual Stress ◽  
Low Temperature ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Photoluminescence Excitation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Low Temperature Photoluminescence ◽  
Epilayer Surface

AbstractResidual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.

Sign in / Sign up

Export Citation Format

Share Document