Heterogeneous Strain Relaxation in GaAs on Si (100)

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Freundlich ◽  
G. Neu ◽  
A. Leycuras ◽  
R. Carles ◽  
C. Verie
Keyword(s):  
Residual Stress ◽  
Low Temperature ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Photoluminescence Excitation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Low Temperature Photoluminescence ◽  
Epilayer Surface

AbstractResidual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.

Macro-and Microstrain Relaxation in Annealed Ag Films During Ageing at Room Temperature

1997 ◽  
Vol 505 ◽  
Author(s):  
R. C. Currie ◽  
R. Delhez ◽  
E. J. Mitiemeijer
Keyword(s):  
Room Temperature ◽  
Strain Relaxation ◽  
Diffraction Line ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Thermally Induced ◽  
X Ray ◽  
Diffraction Line Profile ◽  
The Matrix ◽  
Profile Position

ABSTRACTThe relaxation of thermally induced strain in 500 nm thick polycrystalline Ag layers electron-beam deposited onto Si wafers was traced during ageing at room temperature. The layers consisted predominantly of matrix crystallites with {111} planes parallel to the surface and twin crystallites with {51 l} planes parallel to the surface. The macrostrain in the plane of the layer was determined from the X-ray diffraction line-profile position and the microstrain from the diffraction-line broadening. The residual macrostress relaxed from 160 MPa to 30 MPa in the matrix crystallites and from 170 MPa to 50 MPa in the twin crystallites. Simultaneously with the decrease in macrostress the microstrain decreases significantly for both texture fractions. The strain relaxation behaviour is governed by movement and subsequent annihilation of defects in the layer.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Low-temperature crystal structure of RS-thiocamphor

2004 ◽  
Vol 219 (9) ◽  
Author(s):  
E. Louise R. Robins ◽  
Michela Brunelli ◽  
Asiloé J. Mora ◽  
Andrew N. Fitch
Keyword(s):  
Crystal Structure ◽  
Phase Transitions ◽  
Low Temperature ◽  
Room Temperature ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Orthorhombic Space Group ◽  
Two Phase ◽  
X Ray ◽  
Low Temperature Crystal Structure

AbstractDSC and high-resolution powder X-ray diffraction measurements in the range 295 K–100 K show that RS-thiocamphor undergoes two phase transitions. The first, at around 260 K on cooling, is from the room-temperature body-centred-cubic phase to a short-lived intermediate. At 258 K the low-temperature form starts to appear. The crystal structure of the latter is orthorhombic, space group

Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction

2014 ◽  
Vol 778-780 ◽  
pp. 453-456 ◽  
Author(s):  
Masashi Nakabayashi ◽  
Tatsuo Fujimoto ◽  
Hiroshi Tsuge ◽  
Kiyoshi Kojima ◽  
Kozo Abe ◽  
...  
Keyword(s):  
Residual Stress ◽  
Temperature Distribution ◽  
Room Temperature ◽  
Radial Direction ◽  
Large Strain ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plane Direction ◽  
Lateral Temperature

The room temperature residual stress of 4H-SiC wafers has been investigated using a precise X-ray diffraction method. A large strain was observed for the circumferential direction of wafers, more than ten times larger than those measured along the principal plane direction and the radial direction. Optimizing the lateral temperature distribution in growing crystals leads to reduction of residual stress of wafers with high crystal quality.

Structural, Magnetic, and Electrical Properties of BiFe1-xMnxO3 Thin Films

2009 ◽  
Vol 1199 ◽  
Author(s):  
Danilo G Barrionuevo ◽  
Surinder P Singh ◽  
Maharaj S. Tomar
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Magnetic Measurements ◽  
Sol Gel ◽  
Ion Concentration ◽  
Ferromagnetic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Sol Gel Process

AbstractWe synthesized BiFe1-xMnxO3 (BFMO) for various compositions by sol gel process and thin films were deposited by spin coating on platinum Pt/Ti/SiO2/Si substrates. X-ray diffraction shows all the diffraction planes corresponding to rhombohedrally distorted perovskite BiFeO3 structure. The absence of any impurity phase in the films suggests the incorporation Mn ion preferentially to Fe site in the structure for low concentration. Magnetic measurements reveal the formation of ferromagnetic phase at room temperature with increased Mn substitution. On the other hand, ferroelectric polarization decreases with increasing Mn ion concentration. Raman studies suggest the dopant induced structural distortion.

Phase Transitions and Recrystallization in a Ti-46at%Al-9at%Nb Alloy as Observed by In-Situ High-Energy X-ray Diffraction

2006 ◽  
Vol 980 ◽  
Author(s):  
Klaus-Dieter Liss ◽  
Helmut Clemens ◽  
Arno Bartels ◽  
Andreas Stark ◽  
Thomas Buslaps
Keyword(s):  
Phase Transitions ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Reciprocal Lattice ◽  
Lamellar Microstructure ◽  
High Energy ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray

AbstractHigh-energy synchrotron X-ray diffraction is a powerful tool for bulk studies of materials. In this investigation, it is applied to the investigation of an intermetallic γ-TiAl based alloy with a composition of Ti-46Al-9Nb. The morphology of the reflections on the Debye-Scherrer rings is evaluated in order to approach grain sizes as well as crystallographic correlations. An in-situ heating cycle from room temperature to a temperature above the α-transus temperature has been conducted starting from a massively transformed sample. With increasing temperature the occurrence of strain relaxation, chemical and phase separation, domain orientations, phase transitions, recrystallization processes, and subsequent grain growth can be observed. During cooling to room temperature, crystallographic correlations between the re-appearing γ-phase and the host α-phase, known as the Blackburn correlation, are observed in the reciprocal lattice, which splits into different twinning and domain orientation relationships present in the fully lamellar microstructure.

Low-temperature X-ray diffraction studies on [Cu(4-Xpz)2]x linear chain polymers (where X = Cl, Br, CH3, H; pz = pyrazolate)

1993 ◽  
Vol 71 (3) ◽  
pp. 331-334 ◽  
Author(s):  
Martin K. Ehlert ◽  
Alan Storr ◽  
Robert C. Thompson ◽  
Frederick W. B. Einstein ◽  
Raymond J. Batchelor
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Copper Ions ◽  
Structural Parameters ◽  
Linear Chain ◽  
Crystallographic Axis ◽  
X Ray Diffraction ◽  
Orthorhombic Space Group ◽  
X Ray ◽  
Cell Parameters

Room temperature and low-temperature (110–140 K) powder diffractograms have been obtained for the polymeric compounds [Cu(4-Xpz)2]x (where X = H, CH3, Cl, and Br), and values of the unit cell parameters (orthorhombic, space group Ibam) a, b, and c have been obtained at both high and low temperatures. A single crystal X-ray diffraction study of the X = H compound at 116 K was completed and the results compared with a published study done at room temperature. The structures of these complexes involve extended chains of pyrazolate-bridged copper ions extending along the c crystallographic axis. The X-ray studies indicate little change in the c parameter with decreasing temperature and small but significant changes in the a or b parameters reflecting changes in interchain packing. This study permits some evaluation of how structural parameters are affected by these variations in interchain packing and how these variations may be affecting the magnitude of magnetic exchange in the compounds.

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