scholarly journals Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N

2011 ◽  
Vol 99 (2) ◽  
pp. 021903 ◽  
Author(s):  
Martin Feneberg ◽  
Marcus Röppischer ◽  
Norbert Esser ◽  
Christoph Cobet ◽  
Benjamin Neuschl ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoluminescence Excitation

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Valence Band Splitting in Wurtzite InGaAs Nanoneedles Studied by Photoluminescence Excitation Spectroscopy

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11440-11446 ◽  
Author(s):  
Xiaodong Wang ◽  
Ilaria Zardo ◽  
Danče Spirkoska ◽  
Sara Yazji ◽  
Kar Wei Ng ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoluminescence Excitation ◽  
Band Splitting ◽  
Valence Band Splitting

scholarly journals Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy

2011 ◽  
Author(s):  
H. E. Jackson ◽  
S. Perera ◽  
K. Pemasiri ◽  
L. M. Smith ◽  
J. Yarrison-Rice ◽  
...  
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Photoluminescence Excitation ◽  
Valence Band Structure

Near Gap Photoluminescence of GaAs Grown Directly on InP

1989 ◽  
Vol 145 ◽  
Author(s):  
M. Lamont Schnoes ◽  
T.D. Harris ◽  
W.S. Hobson ◽  
R. M. Lum ◽  
J. K. Klingert
Keyword(s):  
Thermal Expansion ◽  
Valence Band ◽  
Spectral Features ◽  
Thermal Expansion Mismatch ◽  
Photoluminescence Excitation ◽  
Carbon Impurity ◽  
The Third ◽  
Inp Substrates ◽  
Split Valence ◽  
Good Agreement

AbstractWe present a detailed photoluminescence and photoluminescence excitation study of GaAs grown directly on InP substrates by MOCVD. Reliable peak assignments are determined. With these peak assignments, we measure strain and strain uniformity, identify impurities, and assess material quality. Most samples exhibit three distinct spectral features. The two highest energy features are the strain split valence band, the third feature is a carbon impurity. The observed splitting is in good agreement with the value predicted from the thermal expansion mismatch.

Valence-band splitting in orderedGa0.5In0.5P measured by polarized photoluminescence excitation spectroscopy

1992 ◽  
Vol 46 (11) ◽  
pp. 7232-7235 ◽  
Author(s):  
D. J. Mowbray ◽  
R. A. Hogg ◽  
M. S. Skolnick ◽  
M. C. DeLong ◽  
S. R. Kurtz ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoluminescence Excitation ◽  
Band Splitting ◽  
Valence Band Splitting

Photoluminescence and Photoluminescence Excitation Spectra of GaAs Grown Directly on Si

1986 ◽  
Vol 67 ◽  
Author(s):  
S. Zemon ◽  
S. K. Shastry ◽  
P. Norris ◽  
C. Jagannath ◽  
G. Lambert
Keyword(s):  
High Temperature ◽  
Valence Band ◽  
Conduction Band ◽  
Tensile Strain ◽  
Second Line ◽  
Photoluminescence Excitation ◽  
Excitation Spectra ◽  
Biaxial Tensile ◽  
Band Transition ◽  
Biaxial Tensile Strain

ABSTRACTThe photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K. A second line, also identified as intrinsic, dominates the spectra below 100 K. A biaxial tensile strain is proposed to account for the two intrinsic lines through a splitting of the valence band degeneracy.

scholarly journals Valence band splitting in wurtzite InP nanowires observed by photoluminescence and photoluminescence excitation spectroscopy

Nano Research ◽  
2010 ◽  
Vol 4 (2) ◽  
pp. 159-163 ◽  
Author(s):  
Gerben L. Tuin ◽  
Magnus T. Borgström ◽  
Johanna Trägårdh ◽  
Martin Ek ◽  
L. Reine Wallenberg ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoluminescence Excitation ◽  
Band Splitting ◽  
Valence Band Splitting

scholarly journals Фотолюминесценция низкоразмерных композитных структур полиметилметакрилат/(Zn,Cd,Mn,Eu)S

2021 ◽  
Vol 91 (5) ◽  
pp. 808
Author(s):  
В.П. Смагин ◽  
А.А. Исаева
Keyword(s):  
Energy Transfer ◽  
Band Gap ◽  
Valence Band ◽  
Energy Levels ◽  
Structural Defects ◽  
Photoluminescence Excitation ◽  
Semiconductor Particles ◽  
Optically Transparent ◽  
Partial Energy ◽  
Low Dimensional

A colloidal technology for the synthesis and doping of low-dimensional structures based on zinc and cadmium sulfides directly in the medium of an acrylic monomer is implemented in the process of obtaining optically transparent compositions of polymethylmethacrylate/(Zn,Cd,Mn,Eu)S. It is shown that the photoluminescence of the compositions is associated with a system of levels of structural defects of semiconductor particles located in its band gap, which are formed during successive doping of ZnS and CdS layers with Mn2+ and Eu3+ ions, and with intraband 5D0 → 7F1,2,4 transitions of 4f-electrons of Eu3+ ions. Photoluminescence excitation it occurs as a result of the transition of electrons from the valence band of a semiconductor to the levels of defects in its structure and partial energy transfer to the excited energy levels of Eu3+ ions.

Band-Edge Luminescence of MOCVD GaAs Grown Directly on Silicon

1987 ◽  
Vol 102 ◽  
Author(s):  
M. G. Lamont ◽  
T. D. Harris ◽  
R. Sauer ◽  
R. M. Lum ◽  
J. K. Klingert
Keyword(s):  
Temperature Variation ◽  
Valence Band ◽  
Selective Excitation ◽  
Substrate Thickness ◽  
Spectral Features ◽  
Photoluminescence Excitation ◽  
Si Substrates ◽  
Band Edge Luminescence ◽  
Split Valence ◽  
Thick Layers

ABSTRACTWe report a detailed study using photoluminescence and photoluminescence excitation of MOCVD GaAs grown directly on Si substrates. Temperature variation and selective excitation allow reliable assignment of spectral features. This assignment permits measurements of strain and strain uniformity, identification of impurities, and assessment of general materials quality. In 2–5μm thick layers similar spectra are observed with little variation from substrate character. Most samples show one of the two split valence band features plus defect recombination, always including carbon. Strain uniformity varies widely and correlates with substrate thickness. The range of spectra observed from a variety of samples, and guidelines for interpretation of nonresonantly excited spectra will be discussed.

Sign in / Sign up

Export Citation Format

Share Document