Rapid Thermal Annealing of Fib-Implanted Ga Shallow Impurity Profiles

1987 ◽  
Vol 101 ◽  
Author(s):  
C-M. Lin ◽  
A.J. Steckl ◽  
T.P. Chow
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
High Dose Rate ◽  
High Dose ◽  
Beam Diameter ◽  
Si Substrates ◽  
Concentration Depth Profile ◽  
Shallow Impurity

ABSTRACTIn this paper, we present the results of a study to fabricate shallow p+ n junction using Ga FIB implantation in conjunction with rapid thermal annealing (RTA). A focused 75 KeV ion beam with BO mA/cm2 current density and 0.5 μm beam diameter was used to implant Ga into (100) Si substrates at the doses from 1E13 to 5E15/cm2. The annealing temperature is from 600 °C to 1000 °C for various times, 10–30 sec. Secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP) were used to measure the implanted Ga atomic and carrier concentration depth profiles. As compared to the conventional broad beam (BB) implantation, the FIB implanted impurity concentration depth profile has a longer tail and thus a deeper p+n junction. The damage generated by the high dose rate implantation is possibly responsible for this phenomenon. The results of SRP measurements of the FIB as-implanted samples show no Scif-anneal ing occured during implantations. p+n diodes fabricated using FIB exhibit good junction properties: ideality factor of 1.1, reverse–bias leakage current of below 5 nA/cm2 at -IV, and breakdown voltage of about 35 V.

Amorphous Phase Transformation During Rapid Thermal Annealing of Ion-Implanted Si

1985 ◽  
Vol 52 ◽  
Author(s):  
D. Kirillov ◽  
R. A. Powell ◽  
D. T. Hodul
Keyword(s):  
Thermal Annealing ◽  
Amorphous Phase ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
High Energy ◽  
Local Order ◽  
High Dose ◽  
Annealing Effects ◽  
Ion Species ◽  
Low Order

ABSTRACTVariations in the local order of the amorphous phase of Si produced by ion implantation and subjected to rapid thermal annealing were studied using the Raman scattering technique. It was found that the low order amorphous phase was formed independently of implantation ion species for low dose, low energy implantation at room temperature. For high energy, high dose implantation with heavy ions, the ion beam annealing effects were apparent and the higher order amorphous phase was formed. Rapid thermal annealing produced transformation from the low order phase to the high order amorphous phase. The continuous transformation was completed when the detectable crystalline phase regrowth started.

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

scholarly journals Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2248 ◽  
Author(s):  
Hadi Mahmodi ◽  
Md Hashim ◽  
Tetsuo Soga ◽  
Salman Alrokayan ◽  
Haseeb Khan ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Near Infrared ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Infrared Region ◽  
Alloy Formation ◽  
Phase Mixing ◽  
Si Substrates ◽  
Msm Photodetector

In this work, nanocrystalline Ge1−xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400 °C, and 450 °C, for 10 s. Then, the effect of thermal annealing on the morphological, structural, and optical characteristics of the synthesized Ge1−xSnx alloys were investigated. The nanocrystalline Ge1−xSnx formation was revealed by high-resolution X-ray diffraction (HR-XRD) measurements, which showed the orientation of (111). Raman results showed that phonon intensities of the Ge-Ge vibrations were improved with an increase in the annealing temperature. The results evidently showed that raising the annealing temperature led to improvements in the crystalline quality of the layers. It was demonstrated that Ge-Sn solid-phase mixing had occurred at a low temperature of 400 °C, which led to the creation of a Ge1−xSnx alloy. In addition, spectral photo-responsivity of a fabricated Ge1−xSnx metal-semiconductor-metal (MSM) photodetector exhibited its extending wavelength into the near-infrared region (820 nm).

High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon

1984 ◽  
Vol 23 (Part 2, No. 6) ◽  
pp. L417-L420 ◽  
Author(s):  
Masao Tamura ◽  
Shoji Shukuri ◽  
Tohru Ishitani ◽  
Masakazu Ichikawa ◽  
Takahisa Doi
Keyword(s):  
Dose Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Dose Rate ◽  
Rate Effect ◽  
High Dose ◽  
Boron Implantation ◽  
Dose Rate Effect

Microstructural studies of epitaxial CoSi2layers on silicon produced by ion beam synthesis and rapid thermal annealing

1993 ◽  
Vol 74 (12) ◽  
pp. 7129-7133 ◽  
Author(s):  
C. D. Meekison ◽  
G. R. Booker ◽  
K. J. Reeson ◽  
R. S. Spraggs ◽  
R. M. Gwilliam ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Microstructural Studies

Effect of rapid thermal annealing on the structure of ion beam synthesized β-FeSi2

Vacuum ◽  
2002 ◽  
Vol 69 (1-3) ◽  
pp. 449-454 ◽  
Author(s):  
V. Darakchieva ◽  
M. Surtchev ◽  
E. Goranova ◽  
M. Baleva
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam
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