Microstructural studies of epitaxial CoSi2layers on silicon produced by ion beam synthesis and rapid thermal annealing

1993 ◽  
Vol 74 (12) ◽  
pp. 7129-7133 ◽  
Author(s):  
C. D. Meekison ◽  
G. R. Booker ◽  
K. J. Reeson ◽  
R. S. Spraggs ◽  
R. M. Gwilliam ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Microstructural Studies

scholarly journals Ion Beam Synthesis Of Cds, ZnS, And PbS Compound Semiconductor Nanocrystals

1997 ◽  
Vol 504 ◽  
Author(s):  
C. W. White ◽  
J. D. Budai ◽  
A. L. Meldrum ◽  
S. P. Withrow ◽  
R. A. Zuhr ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Ion Beam ◽  
Semiconductor Nanocrystals ◽  
Compound Semiconductor ◽  
Size Distributions ◽  
Pbs Nanocrystals ◽  
Ion Beam Synthesis ◽  
The Matrix

ABSTRACTSequential ion implantation followed by thermal annealing has been used to form encapsulated CdS, ZnS, and PbS nanocrystals in SiO2 and Al2O3 matrices. In SiO2, nanoparticles are nearly spherical and randomly oriented, and ZnS and PbS nanocrystals exhibit bimodal size distributions. In Al2O3, nanoparticles are facetted and oriented with respect to the matrix. Initial photoluminescence (PL) results are presented.

Effect of rapid thermal annealing on the structure of ion beam synthesized β-FeSi2

Vacuum ◽  
2002 ◽  
Vol 69 (1-3) ◽  
pp. 449-454 ◽  
Author(s):  
V. Darakchieva ◽  
M. Surtchev ◽  
E. Goranova ◽  
M. Baleva
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam

Influence of Low-Dose Ion-Beam Mixing on CoSi2 Formation

1992 ◽  
Vol 268 ◽  
Author(s):  
Ikasko C. Dehm ◽  
H. Ryssel
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Dose ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Annealing Temperatures ◽  
Critical Dose ◽  
Incomplete Reaction ◽  
Abrupt Interface ◽  
Complete Formation

ABSTRACTIn this study, the critical dose for ion-beam mixing of Co and Si with Ge-ions which results in homogenous CoSi2 formation after rapid thermal annealing was found. For this purpose, Co was deposited by sputtering on chemically cleaned, <100>-oriented Si and subsequently mixed with Ge ions at doses in the range of 2. 1014 to 1. 1015 cm−2. Silicidation was performed in a rapid thermal annealing (RTA) system at temperatures between 700° and 100°C. Rutherford backscattering measurements showed that annealing at 700°C results in an incomplete reaction when ion-beam mixing at a dose of 2.1014 cm−2 or no ion-beam mixing was performed. After annealing at 1000°C, TEM samples revealed an inhomogeneous CoSi2 film consisting of large grains embedded in the Si. Mixing at doses at or above 5.1014 cm−2 and subsequent RTA at 700°C resulted in uniform CoSi2 layers. Higher annealing temperatures cause larger grains and resistivity values as low as 18 μΩcm. Therefore, we demonstrated that the critical dose leading to complete formation of smooth CoSi2 films with abrupt interface is 5.1014 cm−2 which is nearly the same value as the amorphization dose of Ge in Si.

Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing

1991 ◽  
Vol 224 ◽  
Author(s):  
Po-Ching Chen ◽  
Jian-Yang Lin ◽  
Huey-Liang Hwang
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Titanium Silicide ◽  
Mixing Conditions ◽  
Cross Sectional ◽  
Ion Beam Mixing ◽  
Post Annealing

AbstractTitanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapid thermal annealing. Three different arsenic-ion mixing conditions were examined in this work. The sheet resistance, residue As concentration post annealing and TiSi2 phase were characterized by using the* four-point probe, RBS and electron diffraction, respectively. TiSi2 of C54 phase was identified in the doubly implanted samples. The thickness of the Ti silicide and the TiSi2/Si interface were observed by the cross-sectional TEM.

Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing

1988 ◽  
Vol 52 (11) ◽  
pp. 877-879 ◽  
Author(s):  
Y. H. Ku ◽  
S. K. Lee ◽  
D. K. Shih ◽  
D. L. Kwong ◽  
C‐O Lee ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Silicide Growth

Doping properties of the Ion-Beam-Sputtered SiGe Film

1996 ◽  
Vol 441 ◽  
Author(s):  
Wen-Jie Qi ◽  
Zhi-Sheng Wang ◽  
Zhi-Guang Gu ◽  
Guo-Ping Ru ◽  
Guo-Bao Jialig ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Polycrystalline Structure ◽  
X Ray ◽  
Post Annealing ◽  
And Diffusion

AbstractThe ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.

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