Amorphous Phase Transformation During Rapid Thermal Annealing of Ion-Implanted Si

1985 ◽  
Vol 52 ◽  
Author(s):  
D. Kirillov ◽  
R. A. Powell ◽  
D. T. Hodul
Keyword(s):  
Thermal Annealing ◽  
Amorphous Phase ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
High Energy ◽  
Local Order ◽  
High Dose ◽  
Annealing Effects ◽  
Ion Species ◽  
Low Order

ABSTRACTVariations in the local order of the amorphous phase of Si produced by ion implantation and subjected to rapid thermal annealing were studied using the Raman scattering technique. It was found that the low order amorphous phase was formed independently of implantation ion species for low dose, low energy implantation at room temperature. For high energy, high dose implantation with heavy ions, the ion beam annealing effects were apparent and the higher order amorphous phase was formed. Rapid thermal annealing produced transformation from the low order phase to the high order amorphous phase. The continuous transformation was completed when the detectable crystalline phase regrowth started.

Rapid Thermal Annealing of Fib-Implanted Ga Shallow Impurity Profiles

1987 ◽  
Vol 101 ◽  
Author(s):  
C-M. Lin ◽  
A.J. Steckl ◽  
T.P. Chow
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
High Dose Rate ◽  
High Dose ◽  
Beam Diameter ◽  
Si Substrates ◽  
Concentration Depth Profile ◽  
Shallow Impurity

ABSTRACTIn this paper, we present the results of a study to fabricate shallow p+ n junction using Ga FIB implantation in conjunction with rapid thermal annealing (RTA). A focused 75 KeV ion beam with BO mA/cm2 current density and 0.5 μm beam diameter was used to implant Ga into (100) Si substrates at the doses from 1E13 to 5E15/cm2. The annealing temperature is from 600 °C to 1000 °C for various times, 10–30 sec. Secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP) were used to measure the implanted Ga atomic and carrier concentration depth profiles. As compared to the conventional broad beam (BB) implantation, the FIB implanted impurity concentration depth profile has a longer tail and thus a deeper p+n junction. The damage generated by the high dose rate implantation is possibly responsible for this phenomenon. The results of SRP measurements of the FIB as-implanted samples show no Scif-anneal ing occured during implantations. p+n diodes fabricated using FIB exhibit good junction properties: ideality factor of 1.1, reverse–bias leakage current of below 5 nA/cm2 at -IV, and breakdown voltage of about 35 V.

Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effects

Rapid thermal annealing effects on blue luminescence of As-implanted GaN

2002 ◽  
Vol 92 (7) ◽  
pp. 4129-4131 ◽  
Author(s):  
H. Y. Huang ◽  
J. Q. Xiao ◽  
C. S. Ku ◽  
H. M. Chung ◽  
W. K. Chen ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Luminescence ◽  
Annealing Effects

Structural Characteristics of Diamond-Like Carbon Films Synthesized by Different Methods

2017 ◽  
Vol 743 ◽  
pp. 112-117
Author(s):  
Alexander Zolkin ◽  
Anna Semerikova ◽  
Sergey Chepkasov ◽  
Maksim Khomyakov
Keyword(s):  
Amorphous Phase ◽  
Ion Beam ◽  
High Energy ◽  
Carbon Films ◽  
Ion Source ◽  
Ordered Structure ◽  
Deposition Technique ◽  
Cathodic Arc Deposition ◽  
Cathodic Arc ◽  
Arc Deposition

In the present study, the Raman spectra of diamond-like amorphous (a-C) and hydrogenated amorphous (a-C:H) carbon films on silicon obtained using the ion-beam methods and the pulse cathodic arc deposition technique were investigated with the aim of elucidating the relation between the hardness and structure of the films. The hardness of the samples used in the present study was 19 – 45 GPa. Hydrogenated carbon films were synthesized using END–Hall ion sources and a linear anode layer ion source (LIS) on single-crystal silicon substrates. The gas precursors were CH4 and C3H8, and the rate of the gas flow fed into the ion source was 4.4 to 10 sccm. The ion energies ranged from 150 to 600 eV. a-C films were deposited onto Si substrates using the pulse cathodic arc deposition technique. The films obtained by the pulse arc technique contained elements with an ordered structure. In the films synthesized using low- (150 eV) and high-energy (600 eV) ions beams, an amorphous phase was the major phase. The significant blurriness of the diffraction rings in the electron diffraction patterns due to a large film thickness (180 – 250 nm) did not allow distinctly observing the signals from the elements with an ordered structure against the background of an amorphous phase.

As-deposited properties and rapid thermal annealing effects on Ti/TiN barrier layer for aluminum plug technology

1994 ◽  
Author(s):  
De-Dui Liao ◽  
Yih-Shung Lin ◽  
Hong Yang ◽  
Howard Witham ◽  
Javier Saenz ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Barrier Layer ◽  
Annealing Effects

High energy product FexPt100-x thin films (x = 60–66) prepared by rapid thermal annealing

2020 ◽  
Vol 397 ◽  
pp. 125978
Author(s):  
H.W. Chang ◽  
F.T. Yuan ◽  
C.Y. Shen ◽  
M.F. Huang ◽  
C.Y. Hung ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Energy ◽  
Energy Product

Microstructural studies of epitaxial CoSi2layers on silicon produced by ion beam synthesis and rapid thermal annealing

1993 ◽  
Vol 74 (12) ◽  
pp. 7129-7133 ◽  
Author(s):  
C. D. Meekison ◽  
G. R. Booker ◽  
K. J. Reeson ◽  
R. S. Spraggs ◽  
R. M. Gwilliam ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Microstructural Studies
Sign in / Sign up

Export Citation Format

Share Document