Activation Characteristics of Implanted Dopants in InAs, GaSb and GaP After Rapid Thermal Annealing

1988 ◽  
Vol 100 ◽  
Author(s):  
A. R. Von Neida ◽  
K. T. Short ◽  
J. M. Brown ◽  
S. J. Pearton
Keyword(s):  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Heat Treatments ◽  
Active Concentration

ABSTRACTWe have studied in some detail the activation of implanted Si and Mg ions in InAs, GaSb and GaP after rapid thermal annealing. Even at doses of 1015 cm−2, the activation percentage of Mg is relatively high after optimum anneals -80% in GaP, 55% in GaSb and 45% in InAs. There is considerable outdiffusion of Mg in all three semiconductors for extended heat treatments. The amphoteric species Si shows good activation (60% for 1015 cm−2 dose) in InAs, a saturation electrically active concentration of ∼3 × 1013 cm−2 in GaP, and very low electrical activity in GaSb. The regrowth and damage removal characteristics in the three materials are similar to those of GaAs and InP.

Activation Mechanisms in Ion-Implanted GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
N. Morris ◽  
B. J. Sealy
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Time ◽  
Electrical Activation ◽  
Annealing Stage ◽  
Activation Mechanisms ◽  
Ion Implanted

ABSTRACTRapid thermal annealing has been used to study the electrical activation mechanisms for magnesium and selenium implants in GaAs. By analysing the changes in electrical activity as a function of annealing time and temperature, a model has been developed which accurately predicts the electrical properties following the post-implant annealing stage. The model has been used to study the activation of other ions, particularly zinc, beryllium, tin and sulphur, the results of which will be compared with those of magnesium and selenium. The results suggest that the mechanism for electrical activation is dominated by the diffusion of gallium, arsenic or vacancies. The paper will present the model and discuss the activation mechanisms of the ions.

scholarly journals The Effect of Co-Implantation on the Electrical Activity of Implanted Carbon in GaAs

1991 ◽  
Vol 240 ◽  
Author(s):  
A. J. Moll ◽  
W. Walukiewicz ◽  
K. M. Yu ◽  
W. L. Hansen ◽  
E. E. Haller
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Systematic Study ◽  
Active Carbon ◽  
Amorphous Layer ◽  
Group V ◽  
Group Iii ◽  
Carbon Impurities

ABSTRACTWe have undertaken a systematic study of the effect of co-implantation on the electrical properties of C implanted in GaAs. Two effects have been studied, the additional damage caused by co-implantation and the stoichiometry in the implanted layer. A series of co-implant ions were used: group III (B, Al, Ga), group V (N, P, As) and noble gases (Ar, Kr). Co-implantation of ions which create an amorphous layer was found to increase the electrical activity of C Once damage was created, maintaining stoichiometric balance by co-implantation of a group III further increased the fraction of electrically active carbon impurities. Co-implantation of Ga and rapid thermal annealing at 950°C for 10 s resulted in carbon activation as high as 68%, the highest value ever reported.

Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealing

1987 ◽  
Vol 51 (13) ◽  
pp. 1013-1015 ◽  
Author(s):  
N. Chand ◽  
R. Fischer ◽  
A. M. Sergent ◽  
D. V. Lang ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Gaas On Si

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application
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