scholarly journals The Effect of Co-Implantation on the Electrical Activity of Implanted Carbon in GaAs

1991 ◽  
Vol 240 ◽  
Author(s):  
A. J. Moll ◽  
W. Walukiewicz ◽  
K. M. Yu ◽  
W. L. Hansen ◽  
E. E. Haller
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Systematic Study ◽  
Active Carbon ◽  
Amorphous Layer ◽  
Group V ◽  
Group Iii ◽  
Carbon Impurities

ABSTRACTWe have undertaken a systematic study of the effect of co-implantation on the electrical properties of C implanted in GaAs. Two effects have been studied, the additional damage caused by co-implantation and the stoichiometry in the implanted layer. A series of co-implant ions were used: group III (B, Al, Ga), group V (N, P, As) and noble gases (Ar, Kr). Co-implantation of ions which create an amorphous layer was found to increase the electrical activity of C Once damage was created, maintaining stoichiometric balance by co-implantation of a group III further increased the fraction of electrically active carbon impurities. Co-implantation of Ga and rapid thermal annealing at 950°C for 10 s resulted in carbon activation as high as 68%, the highest value ever reported.

Activation Mechanisms in Ion-Implanted GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
N. Morris ◽  
B. J. Sealy
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Time ◽  
Electrical Activation ◽  
Annealing Stage ◽  
Activation Mechanisms ◽  
Ion Implanted

ABSTRACTRapid thermal annealing has been used to study the electrical activation mechanisms for magnesium and selenium implants in GaAs. By analysing the changes in electrical activity as a function of annealing time and temperature, a model has been developed which accurately predicts the electrical properties following the post-implant annealing stage. The model has been used to study the activation of other ions, particularly zinc, beryllium, tin and sulphur, the results of which will be compared with those of magnesium and selenium. The results suggest that the mechanism for electrical activation is dominated by the diffusion of gallium, arsenic or vacancies. The paper will present the model and discuss the activation mechanisms of the ions.

Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact top-GaN

2001 ◽  
Vol 40 (Part 1, No. 7) ◽  
pp. 4450-4453
Author(s):  
Je Won Kim ◽  
Seong-Il Kim ◽  
Yong Tae Kim ◽  
Sangsig Kim ◽  
Man Young Sung ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Susceptor and Proximity Rapid Thermal Annealing of InP

1990 ◽  
Vol 181 ◽  
Author(s):  
A. Katz ◽  
S. J. Pearton ◽  
M. Geva
Keyword(s):  
Surface Morphology ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Substrate Surface ◽  
Effective Surface ◽  
Group V ◽  
Surface Protection ◽  
Pit Formation ◽  
Annealing Cycle ◽  
Inp Substrates

ABSTRACTAn intensive comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology, was carried out. The superiority of annealing within a susccptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750°C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration.

Effects of rapid thermal annealing (RTA) process on pysical and electrical properties of Bi4La4-xTi3O12 (BLT) thin film

2001 ◽  
Vol 39 (1-4) ◽  
pp. 151-159 ◽  
Author(s):  
Woo Seok Yang ◽  
Nam Kyeong Kim ◽  
Seung Jin Yeom ◽  
Soon Yong Kweon ◽  
Eun Seok Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs

1996 ◽  
Vol 98 (5) ◽  
pp. 475-478
Author(s):  
Chang-Sik Son ◽  
Seong-Il Kim ◽  
Tae-Geun Kim ◽  
Yong Kim ◽  
Moo-Sung Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carbon Doped
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