Activation Mechanisms in Ion-Implanted GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
N. Morris ◽  
B. J. Sealy
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Time ◽  
Electrical Activation ◽  
Annealing Stage ◽  
Activation Mechanisms ◽  
Ion Implanted

ABSTRACTRapid thermal annealing has been used to study the electrical activation mechanisms for magnesium and selenium implants in GaAs. By analysing the changes in electrical activity as a function of annealing time and temperature, a model has been developed which accurately predicts the electrical properties following the post-implant annealing stage. The model has been used to study the activation of other ions, particularly zinc, beryllium, tin and sulphur, the results of which will be compared with those of magnesium and selenium. The results suggest that the mechanism for electrical activation is dominated by the diffusion of gallium, arsenic or vacancies. The paper will present the model and discuss the activation mechanisms of the ions.

scholarly journals The Effect of Co-Implantation on the Electrical Activity of Implanted Carbon in GaAs

1991 ◽  
Vol 240 ◽  
Author(s):  
A. J. Moll ◽  
W. Walukiewicz ◽  
K. M. Yu ◽  
W. L. Hansen ◽  
E. E. Haller
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Systematic Study ◽  
Active Carbon ◽  
Amorphous Layer ◽  
Group V ◽  
Group Iii ◽  
Carbon Impurities

ABSTRACTWe have undertaken a systematic study of the effect of co-implantation on the electrical properties of C implanted in GaAs. Two effects have been studied, the additional damage caused by co-implantation and the stoichiometry in the implanted layer. A series of co-implant ions were used: group III (B, Al, Ga), group V (N, P, As) and noble gases (Ar, Kr). Co-implantation of ions which create an amorphous layer was found to increase the electrical activity of C Once damage was created, maintaining stoichiometric balance by co-implantation of a group III further increased the fraction of electrically active carbon impurities. Co-implantation of Ga and rapid thermal annealing at 950°C for 10 s resulted in carbon activation as high as 68%, the highest value ever reported.

Rapid Thermal Annealing of Ion Implanted GaAs and InP

1983 ◽  
Vol 23 ◽  
Author(s):  
K.V. Vaidyanathan ◽  
H.L. Dunlap
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Intensity ◽  
Annealing Process ◽  
Electrical Activation ◽  
High Fluence ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Ion Implanted

ABSTRACTThis paper discusses the properties of high intensity lamp-annealed silicon or beryllium-implanted GaAs and InP samples. We find this annealing process can result in efficient activation of dopants. Conventional furnace annealing at the same temperature does not result in increased electrical activation of the dopants. High fluence silicon implants can be activated in anneal times as short as 2 seconds, while low fluence silicon implants require more extended annealing. Activation of low fluence implants in GaAs depends strongly on the properties of the bulk semiinsulating material.

The Effect of Oxygen on The Electrical Activation and Diffusion of Ion-Implanted Boron

1997 ◽  
Vol 469 ◽  
Author(s):  
K. Kyllesbech Larsen ◽  
P. A. Stoik ◽  
V. Privitera ◽  
J. G. M. van Berkum ◽  
W. B. de Boer ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Electrical Activation ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Effect Of Oxygen ◽  
P Type ◽  
And Diffusion ◽  
Ion Implanted

ABSTRACTTransient enhanced diffusion (TED) and electrical activation (EA) of ion-implanted boron during rapid thermal annealing has been investigated using three types of boron doped p-type Si (100) substrates: (a) Cz 20 Ωcm, (b) 3 μm thick 20 Ωcm epitaxial Si layer (epi-layer) grown on a 20 Ωcm Cz substrate, and (c) 3 μm thick 20 Ωcm epi-layer grown on a 5 mΩcin Fz substrate. The level of oxygen is known to decrease from material type (a) to (c). The samples were implanted with 20 keV, 5×1013cm−2boron and subjected to rapid thermal annealing (RTA) at various temperatures and times. The EA and TED were studied using spreading resistance profiling (SRP) and secondary ion mass spectrometry (SIMS), respectively. Although the amount of TED is almost identical for the three substrates, the EA is found to be significantly higher in the epi-layers compared to Cz substrates. It is speculated that the trapping of vacancies by oxygen in the ion-damaged region leads to an increase in the interstitial supersaturation during annealing, which then results in enhanced boron clustering and reduced electrical activation in the peak of the implanted profile.

Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact top-GaN

2001 ◽  
Vol 40 (Part 1, No. 7) ◽  
pp. 4450-4453
Author(s):  
Je Won Kim ◽  
Seong-Il Kim ◽  
Yong Tae Kim ◽  
Sangsig Kim ◽  
Man Young Sung ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Effect of rapid thermal annealing on carrier lifetimes of arsenic‐ion‐implanted GaAs

1996 ◽  
Vol 69 (7) ◽  
pp. 996-998 ◽  
Author(s):  
Gong‐Ru Lin ◽  
Wen‐Chung Chen ◽  
Feruz Ganikhanov ◽  
C.‐S. Chang ◽  
Ci‐Ling Pan
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Lifetimes ◽  
Ion Implanted
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