Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealing

1987 ◽  
Vol 51 (13) ◽  
pp. 1013-1015 ◽  
Author(s):  
N. Chand ◽  
R. Fischer ◽  
A. M. Sergent ◽  
D. V. Lang ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Gaas On Si

Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing

1986 ◽  
Vol 49 (13) ◽  
pp. 815-817 ◽  
Author(s):  
N. Chand ◽  
R. People ◽  
F. A. Baiocchi ◽  
K. W. Wecht ◽  
A. Y. Cho
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Crystalline Quality ◽  
Gaas On Si

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Characteristic of rapid thermal annealing on GaIn(N)(Sb)As∕GaAs quantum well grown by molecular-beam epitaxy

2006 ◽  
Vol 99 (3) ◽  
pp. 034903 ◽  
Author(s):  
H. Zhao ◽  
Y. Q. Xu ◽  
H. Q. Ni ◽  
S. Y. Zhang ◽  
D. H. Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam

Activation Characteristics of Implanted Dopants in InAs, GaSb and GaP After Rapid Thermal Annealing

1988 ◽  
Vol 100 ◽  
Author(s):  
A. R. Von Neida ◽  
K. T. Short ◽  
J. M. Brown ◽  
S. J. Pearton
Keyword(s):  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Heat Treatments ◽  
Active Concentration

ABSTRACTWe have studied in some detail the activation of implanted Si and Mg ions in InAs, GaSb and GaP after rapid thermal annealing. Even at doses of 1015 cm−2, the activation percentage of Mg is relatively high after optimum anneals -80% in GaP, 55% in GaSb and 45% in InAs. There is considerable outdiffusion of Mg in all three semiconductors for extended heat treatments. The amphoteric species Si shows good activation (60% for 1015 cm−2 dose) in InAs, a saturation electrically active concentration of ∼3 × 1013 cm−2 in GaP, and very low electrical activity in GaSb. The regrowth and damage removal characteristics in the three materials are similar to those of GaAs and InP.

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