Combined Effect of Ion Implantation and Ion Beam Mixing on Metal Surface

1988 ◽  
Vol 100 ◽  
Author(s):  
Tian Wei ◽  
Peng Tau
Keyword(s):  
Ion Implantation ◽  
Current Density ◽  
Ion Beam ◽  
Combined Effect ◽  
Solution Ph ◽  
Ion Beam Mixing ◽  
Order Of Magnitude ◽  
A New Technique ◽  
Passive Current ◽  
Better Than

ABSTRACTThe article is an account of the development of a new technique to improve the surface properties of materials by ion beam bombardment combined effect of ion implantation and ion beam mixing.Ti+ ion beam has been used to mix the surface of Cr-deposited on to Fe or to implant Ti+ into the surface of Fe. By comparing the electrochemical properties, it has been shown that the corrosion resistance of Cr-deposited Fe surface mixed with Ti + ion beam is much better than that of Ti+ ion implanted Fe surface, the critical current density Ic and minimum anodic passive current density Im are decreased by one order of magnitude in deacrated 1M CH3 -COONa-CH3 COOH solution (pH 7.3, 25°C). AES and SIMS observation show Nhat the gombined effect of implantation and mixing has been really achieved.

Corrosion Resistivity of Cermet Coating Made by Ion Beam Treatment

1989 ◽  
Vol 157 ◽  
Author(s):  
Tian Wei ◽  
Cai Weiping
Keyword(s):  
Ion Implantation ◽  
Electrochemical Performance ◽  
Pure Iron ◽  
Ion Beam ◽  
Integrated Treatment ◽  
Single Treatment ◽  
Ion Beam Mixing ◽  
Cermet Coating ◽  
Ion Beam Treatment ◽  
Better Than

ABSTRACTA cermet coating was obtained on a silicon-deposited pure iron surface by means of a single treatment integrating ion implantation and ion beam mixing. As conpared with either simple ion implantation or simple ion beam mixing,the integrated treatment provides the cermet coating with an electrochemical performance far better than the simple treatments.

New Instrumentation in Argonne's Hvem-Tandem Facility: Expanded Capability for in Situ Ion Beam Studies+

1995 ◽  
Vol 396 ◽  
Author(s):  
Charles W. Allen ◽  
Loren L. Funk ◽  
Edward A. Ryan
Keyword(s):  
Scientific Community ◽  
State Of The Art ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Voltage Electron ◽  
User Facility ◽  
Order Of Magnitude ◽  
New Instrumentation ◽  
Better Than

AbstractDuring 1995, a state-of-the-art intermediate voltage electron microscope (IVEM) has been installed in the HVEM-Tandem Facility with in situ ion irradiation capabilities similar to those of the HVEM. A 300 kV Hitachi H-9000NAR has been interfaced to the two ion accelerators of the Facility, with a spatial resolution for imaging which is nearly an order of magnitude better than that for the 1.2 MV HVEM which dates from the early 1970s. The HVEM remains heavily utilized for electron- and ion irradiation-related materials studies, nevertheless, especially those for which less demanding microscopy is adequate. The capabilities and limitations of this IVEM and HVEM are compared. Both the HVEM and IVEM are part of the DOE funded User Facility and therefore are available to the scientific community for materials studies, free of charge for non-proprietary research.

scholarly journals Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion Implantation

1993 ◽  
Vol 316 ◽  
Author(s):  
S.M. Myers ◽  
D.M. Follstaedt ◽  
D.M. Bishop
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Internal Surfaces ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Helium Ion ◽  
Saturation Coverage ◽  
Order Of Magnitude ◽  
Metallic Impurities ◽  
Initial Results

ABSTRACTCavities formed in Si by He ion implantation and annealing are shown be strong traps for Cu and Ni impurities. Experiments utilizing ion-beam analysis and transmission electron microscopy indicate that Cu is trapped at the internal surfaces of cavities up to ≈1 monolayer coverage with a binding energy of 2.2±0.2 eV relative to solution. This is greater than the heat of solution from the precipitated Cu3Si phase, determined to be 1.7 eV in agreement with earlier work. Copper at cavity-wall sites is reversibly replaced by H during heating in H2 gas, indicating the relative stability of the two surface terminations. Initial results for Ni impurities indicate that trapping at cavities is again energetically preferred to suicide formation. The saturation coverage of Ni on the internal surfaces, however, is an order of magnitude smaller for Ni than Cu, consistent with published studies of external-surface adsorption. These results suggest that cavity trapping may getter metallic impurities in Si more effectively than methods based on suicide precipitation.

Soft X-ray emission spectroscopy of low-dimensional SiO2 /Si interfaces after Si+ ion implantation and ion beam mixing

2010 ◽  
Vol 207 (3) ◽  
pp. 743-747 ◽  
Author(s):  
D. A. Zatsepin ◽  
S. Kaschieva ◽  
M. Zier ◽  
B. Schmidt ◽  
H.-J. Fitting
Keyword(s):  
Ion Implantation ◽  
Emission Spectroscopy ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
X Ray ◽  
Low Dimensional ◽  
Si Ion Implantation
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