Soft X-ray emission spectroscopy of low-dimensional SiO2 /Si interfaces after Si+ ion implantation and ion beam mixing

2010 ◽  
Vol 207 (3) ◽  
pp. 743-747 ◽  
Author(s):  
D. A. Zatsepin ◽  
S. Kaschieva ◽  
M. Zier ◽  
B. Schmidt ◽  
H.-J. Fitting
2011 ◽  
Vol 8 (4) ◽  
pp. 1398-1402
Author(s):  
Hans-Joachim Fitting ◽  
Dmitry A. Zatsepin ◽  
Lena Fitting Kourkoutis ◽  
Bernd Schmidt

1989 ◽  
Vol 213 (2-3) ◽  
pp. A230
Author(s):  
M. StróŻak ◽  
P. MikoŁajczak ◽  
M. Subotowicz
Keyword(s):  
Ion Beam ◽  

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.


1995 ◽  
Vol 13 (2) ◽  
pp. 231-241 ◽  
Author(s):  
J.J. MacFarlane ◽  
P. Wang ◽  
J.E. Bailey ◽  
T.A. Mehlhorn ◽  
R.J. Dukart

Kα satellite spectroscopy can be a valuable technique for diagnosing conditions in high energy density plasmas. Kα emission lines are produced in intense light ion beam plasma interaction experiments as 2p electrons fill partially open Is shells created by the ion beam. In this paper, we present results from collisional-radiative equilibrium (CRE) calculations which show how Kα emission spectroscopy can be used to determine target plasma conditions in intense lithium beam experiments on Particle Beam Fusion Accelerator-II (PBFAII) at Sandia National Laboratories. In these experiments, 8–10 MeV lithium beams with intensities of 1–2 TW/cm2 irradiate planar multilayer targets containing a thin Al tracer. Kα emission spectra are measured using an X-ray crystal spectrometer with a resolution of λ/∆λ = 1200. The spectra are analyzed using a CRE model in which multilevel (NL ∼ 103) statistical equilibrium equations are solved self-consistently with the radiation field and beam properties to determine atomic level populations. Atomic level-dependent fluorescence yields and ion-impact ionization cross sections are used in computing the emission spectra. We present results showing the sensitivity of the Kα emission spectrum to temperature and density of the Al tracer. We also discuss the dependence of measured spectra on the X-ray crystal spectral resolution, and how additional diagnostic information could be obtained using multiple tracers of similar atomic number.


2000 ◽  
Vol 70 (1) ◽  
pp. 59-63 ◽  
Author(s):  
Y.S. Lee ◽  
K.Y. Lim ◽  
Y.D. Chung ◽  
C.N. Whang ◽  
Y. Jeon

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