scholarly journals Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion Implantation

1993 ◽  
Vol 316 ◽  
Author(s):  
S.M. Myers ◽  
D.M. Follstaedt ◽  
D.M. Bishop
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Internal Surfaces ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Helium Ion ◽  
Saturation Coverage ◽  
Order Of Magnitude ◽  
Metallic Impurities ◽  
Initial Results

ABSTRACTCavities formed in Si by He ion implantation and annealing are shown be strong traps for Cu and Ni impurities. Experiments utilizing ion-beam analysis and transmission electron microscopy indicate that Cu is trapped at the internal surfaces of cavities up to ≈1 monolayer coverage with a binding energy of 2.2±0.2 eV relative to solution. This is greater than the heat of solution from the precipitated Cu3Si phase, determined to be 1.7 eV in agreement with earlier work. Copper at cavity-wall sites is reversibly replaced by H during heating in H2 gas, indicating the relative stability of the two surface terminations. Initial results for Ni impurities indicate that trapping at cavities is again energetically preferred to suicide formation. The saturation coverage of Ni on the internal surfaces, however, is an order of magnitude smaller for Ni than Cu, consistent with published studies of external-surface adsorption. These results suggest that cavity trapping may getter metallic impurities in Si more effectively than methods based on suicide precipitation.

Solute Binding at Void Surfaces in Silicon and germanium

1992 ◽  
Vol 283 ◽  
Author(s):  
S. M. Myers ◽  
D. M. Bishop ◽  
D. M. Follstaedt ◽  
H. J. Stein ◽  
W. R. Wampler
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Dissociation Energy ◽  
Ion Beam ◽  
Exothermic Reactions ◽  
Internal Surfaces ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Silicon And Germanium ◽  
Surface Bond

ABSTRACTThe strongly exothermic reactions of H and Cu with internal surfaces in Si and Ge were examined in experiments employing ion implantation, ion-beam analysis, transmission electron microscopy, and infrared spectroscopy. The dissociation energy of the Si-H surface bond was determined to be 2.6±0.1 eV, so that the monohydride is more stable than molecular H2, whose dissociation energy per atom is 2.26 eV. Initial experiments indicate a dissociation energy for the Ge-H surface bond of =1.9 eV. Copper is bound to the Si surface with an energy of 2.2±0.2 eV relative to solid solution, as compared to a reported binding energy of 1.5 eV for Cu in the precipitated Cu3Si phase.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

Plasma and Ion Beam Tools for Enhanced Battery Electrode Performance

1996 ◽  
Vol 438 ◽  
Author(s):  
A. Anders ◽  
F. Kong ◽  
Y. Chen ◽  
O. R. Monteiro ◽  
F. R. McLarnon ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Ion Beam ◽  
Current Collector ◽  
Corrosion Current ◽  
Alkaline Electrolyte ◽  
Battery Electrode ◽  
Order Of Magnitude ◽  
Plasma Immersion Ion Implantation ◽  
Metal Ion Implantation

AbstractPlasma and ion beam methods such as gas and metal ion implantation, plasma immersion ion implantation (PIII), and metal plasma immersion ion implantation and deposition (MePIIID) are introduced as powerful tools to modify the properties of battery electrodes. Three kinds of rechargeable electrochemical cells have been investigated: the lead-acid cell, the nickel alkaline-electrolyte cell, and the lithium cell. It was experimentally shown that (i) metal ion implantation of Ti, V, Cr, Ni, and W into lead and lead-antimony electrodes reduced the corrosion current by more than one order of magnitude, (ii) cobalt ion implantation into nickel electrodes enhanced the interconversion of Ni(OH)2 to NiOOH and the associated cycle life, (iii) nitrogen-PIII resulted in the formation of a nitrided lithium layer on lithium which stabilized the surface against corrosion, (iv) MePIIID with a tungsten plasma reduced the pitting corrosion of aluminum, a current collector for a lithium battery.

Nanostructures from Hydrogen and Helium Implantation of Aluminum

2010 ◽  
Vol 1264 ◽  
Author(s):  
Markus D. Ong ◽  
Nancy Yang ◽  
Ryan J. Depuit ◽  
Bruce R. McWatters ◽  
Rion A. Causey
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Mobility ◽  
Transmission Electron ◽  
Helium Ion ◽  
Fusion Applications ◽  
Helium Implantation ◽  
Bicontinuous Structure ◽  
Nanoporous Structures

AbstractThis study investigates a pathway to nanoporous structures created by hydrogen and helium implantation in aluminum. Previous experiments for fusion applications have indicated that hydrogen and helium ion implantations are capable of producing bicontinuous nanoporous structures in a variety of metals. This study focuses specifically on implantations of hydrogen and helium ions at 25 keV in aluminum. The hydrogen and helium systems result in remarkably different nanostructures of aluminum at the surface. Scanning electron microscopy, focused ion beam, and transmission electron microscopy show that both implantations result in porosity that persists approximately 200 nm deep. However, hydrogen implantations tend to produce larger and more irregular voids that preferentially reside at defects. Implantations of helium at a fluence of 1018 cm-2 produce much smaller porosity on the order of 10 nm that is regular and creates a bicontinuous structure in the porous region. The primary difference driving the formation of the contrasting structures is likely the relatively high mobility of hydrogen and the ability of hydrogen to form alanes that are capable of desorbing and etching Al (111) faces.

Development of PC based automation of ion beam analysis and ion implantation experiments

2020 ◽  
Vol 15 (05) ◽  
pp. P05008-P05008
Author(s):  
K. Suresh ◽  
J. Navas ◽  
B. Sundaravel ◽  
J. Pradhan ◽  
C. David ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis

Mg Segregation, Difficulties of P-Doping in GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
Z. Liliental-Weber ◽  
M. Benamara ◽  
W. Swider ◽  
J. Washburn ◽  
I. Grzegory ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Bulk Crystals ◽  
Planar Defects ◽  
Polar Direction ◽  
Internal Surfaces ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Metal Organic

AbstractTransmission electron microscopy has been used to study defects formed in Mg-doped GaN crystals. Three types of crystals have been studied: bulk crystals grown by a high pressure and high temperature process with Mg added to the Ga solution and two types of crystals grown by metal-organic chemical vapor deposition (MOCVD) where Mg was either delta-doped or continuously doped. Spontaneous ordering was observed in bulk crystals. The ordering consists of Mg rich planar defects on basal planes separated by 10.4 nm and occurs only for growth in the N to Ga polar direction (000 1N polarity). These planar defects exhibit the characteristics of stacking faults with a shift vector of a 1/3 [1100] +c/2 but some other features identify these defects as inversion domains. Different type of defects were formed on the opposite site of the crystal (Ga to N polar direction), where the growth rate is also an order of magnitude faster compared to the growth with N-polarity. These defects are three-dimensional: pyramidal and rectangular, empty inside with Mg segregation on internal surfaces. The same types of defects seen for the two growth polarities in the bulk crystals were also observed in the MOCVD grown GaN samples with Mg delta doping, but were not observed in the crystals where Mg was added continuously.

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