Corrosion Resistivity of Cermet Coating Made by Ion Beam Treatment

1989 ◽  
Vol 157 ◽  
Author(s):  
Tian Wei ◽  
Cai Weiping
Keyword(s):  
Ion Implantation ◽  
Electrochemical Performance ◽  
Pure Iron ◽  
Ion Beam ◽  
Integrated Treatment ◽  
Single Treatment ◽  
Ion Beam Mixing ◽  
Cermet Coating ◽  
Ion Beam Treatment ◽  
Better Than

ABSTRACTA cermet coating was obtained on a silicon-deposited pure iron surface by means of a single treatment integrating ion implantation and ion beam mixing. As conpared with either simple ion implantation or simple ion beam mixing,the integrated treatment provides the cermet coating with an electrochemical performance far better than the simple treatments.

Combined Effect of Ion Implantation and Ion Beam Mixing on Metal Surface

1988 ◽  
Vol 100 ◽  
Author(s):  
Tian Wei ◽  
Peng Tau
Keyword(s):  
Ion Implantation ◽  
Current Density ◽  
Ion Beam ◽  
Combined Effect ◽  
Solution Ph ◽  
Ion Beam Mixing ◽  
Order Of Magnitude ◽  
A New Technique ◽  
Passive Current ◽  
Better Than

ABSTRACTThe article is an account of the development of a new technique to improve the surface properties of materials by ion beam bombardment combined effect of ion implantation and ion beam mixing.Ti+ ion beam has been used to mix the surface of Cr-deposited on to Fe or to implant Ti+ into the surface of Fe. By comparing the electrochemical properties, it has been shown that the corrosion resistance of Cr-deposited Fe surface mixed with Ti + ion beam is much better than that of Ti+ ion implanted Fe surface, the critical current density Ic and minimum anodic passive current density Im are decreased by one order of magnitude in deacrated 1M CH3 -COONa-CH3 COOH solution (pH 7.3, 25°C). AES and SIMS observation show Nhat the gombined effect of implantation and mixing has been really achieved.

Soft X-ray emission spectroscopy of low-dimensional SiO2 /Si interfaces after Si+ ion implantation and ion beam mixing

2010 ◽  
Vol 207 (3) ◽  
pp. 743-747 ◽  
Author(s):  
D. A. Zatsepin ◽  
S. Kaschieva ◽  
M. Zier ◽  
B. Schmidt ◽  
H.-J. Fitting
Keyword(s):  
Ion Implantation ◽  
Emission Spectroscopy ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
X Ray ◽  
Low Dimensional ◽  
Si Ion Implantation

Formation of Cosi2-Shallow Junctions By Ion Beam Mixing and Rapid Thermal Annealing

1990 ◽  
Vol 181 ◽  
Author(s):  
L. Niewöhner ◽  
D. Depta
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Dopant Distribution ◽  
Junction Depth ◽  
Ion Beam Mixing ◽  
Sem And Tem ◽  
Shallow Junctions

ABSTRACTFormation of CoSi2 using the technique of ion implantation through metal (ITM) and subsequent appropriate rapid thermal annealing is described. Silicide morphology is investigated by SEM and TEM. SIMS and RBS are used to determine dopant distribution and junction depth. Self-aligned CoSi2/n+p diodes produced in this technique are presented.

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