Metastable Alloy Formation in Electron Beam Pulsed Al and Si

1980 ◽  
Vol 1 ◽  
Author(s):  
S. T. Picraux ◽  
D. M. Follstaedt ◽  
J. A. Knapp ◽  
W. R. Wampler ◽  
E. Rimini
Keyword(s):  
Electron Beam ◽  
Surface Segregation ◽  
Interface Velocity ◽  
Distribution Coefficients ◽  
Alloy Formation ◽  
Pulsed Electron Beam ◽  
Polycrystalline Layer ◽  
Order Of Magnitude ◽  
Metastable Alloys ◽  
Ion Backscattering

ABSTRACTThe formation of metastable alloys by pulsed electron beam annealing of Al implanted with Sn or Ni and of Si implanted with Sn has been studied by TEM, ion backscattering and channeling. Surface segregation after pulsed melting is observed in Si but not in Al, even though all impurities have similar equilibrium distribution coefficients of∼10-2. This difference is attributed to the higher liquid-solid interface velocity and lower diffusivities in Al. Metastable substitutional solutions more than an order of magnitude above equilibrium solubilities are obtained for Ni and Sn in Al. At Ni concentrations ∼ 5 at.% a highly disordered transformation zone is formed in Al and a new phenomenon in which a polycrystalline layer forms on epitaxially regrown Al is observed.

Metastable Fe(Pd) Alloys Formed By Pulsed Electron Beam Melting

1982 ◽  
Vol 13 ◽  
Author(s):  
D. M. Follstaedt ◽  
J. A. Knapp
Keyword(s):  
Phase Diagram ◽  
Electron Beam ◽  
Electron Beam Melting ◽  
Defect Structures ◽  
Surface Alloys ◽  
Pulsed Electron Beam ◽  
Fcc Phase ◽  
Ion Backscattering ◽  
Initial Solidification

ABSTRACTFe(Pd) surface alloys formed by either ion implanting Pd into Fe or by vapor depositing Pd on Fe have been examined after pulsed (∼70 nsec) electron beam melting. TEM and ion backscattering/channeling showed that the implanted alloys with up to 9.6 at.% Pd were bcc and epitaxial with the substrate, inspite of predictions of initial solidification to the fcc phase by the Fe-Pd phase diagram. The resolidified Pd films, however, were fcc as predicted by the diagram. The defect structures observed in these alloys are discussed.

Surface-alloy formation in film–substrate melting by intense pulsed electron beam. Part 2

2015 ◽  
Vol 45 (10) ◽  
pp. 754-758 ◽  
Author(s):  
Yu. F. Ivanov ◽  
Yu. A. Denisova ◽  
A. D. Teresov ◽  
O. V. Krysina
Keyword(s):  
Electron Beam ◽  
Surface Alloy ◽  
Alloy Formation ◽  
Pulsed Electron Beam ◽  
Substrate Melting ◽  
Film Substrate

Surface-alloy formation in film–substrate melting by intense pulsed electron beam. Part 1

2015 ◽  
Vol 45 (8) ◽  
pp. 559-563
Author(s):  
Yu. F. Ivanov ◽  
Yu. A. Denisova ◽  
A. D. Teresov ◽  
O. V. Krysina
Keyword(s):  
Electron Beam ◽  
Surface Alloy ◽  
Alloy Formation ◽  
Pulsed Electron Beam ◽  
Substrate Melting ◽  
Film Substrate

scholarly journals Effect of CeO2 on Corrosion Resistance of High-Current Pulsed Electron Beam Treated Pressureless Sintering Al-20SiC Composites

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 707
Author(s):  
Yue Sun ◽  
Bo Gao ◽  
Liang Hu ◽  
Kui Li ◽  
Ying Zhang
Keyword(s):  
Corrosion Resistance ◽  
Electron Beam ◽  
Rare Earth ◽  
Corrosion Current ◽  
Corrosion Mechanism ◽  
Pressureless Sintering ◽  
Electron Beam Treatment ◽  
High Current ◽  
Pulsed Electron Beam ◽  
Order Of Magnitude

In this paper, the effect of rare earth Ce on the corrosion resistance of Al-20SiC composites treated with high-current pulsed electron beams is investigated, and the corresponding corrosion mechanism is proposed. The scanning electron microscope (SEM) results show that cracks arise on the surface of Al-20SiC composites prepared by pressureless sintering. After electron beam treatment, the pores on the surface are reduced because of the filling of Al liquid. After adding CeO2 to Al-20SiC composites, the wettability between Al and SiC phases is improved, thus realizing metallurgical bonding of the two phases, and microcracks generated after HCPEB treatment are significantly eliminated. Glancing X-ray diffraction (GIXRD) results show that after electron beam treatment, aluminum grains tend to grow more favorably with the stable and dense crystal plane of Al(111), thus improving corrosion resistance. The electrochemical test results show that the corrosion current density decreases by one order of magnitude with increase in the number of pulses because of rare earth Ce compared to the initial Al-20SiC composite specimens, indicating that the corrosion resistance of the Al-20SiC-0.3CeO2 composite is improved. This is because rare earth not only eliminates microcracks, but also changes the type of corrosion from localized to uniform, thus improving corrosion resistance. The Al-based composite material modified by electron beam and rare earth has many potential applications and development prospects.

A controller for safe, convenient operation of LaB6 emitters on electron-beam instruments

1983 ◽  
Vol 41 ◽  
pp. 408-409
Author(s):  
W. J. Abramson ◽  
H. W. Estry ◽  
L. F. Allard
Keyword(s):  
Electron Beam ◽  
Control System ◽  
Thermal Shock ◽  
Appropriate Care ◽  
Electron Guns ◽  
Tungsten Filaments ◽  
Order Of Magnitude ◽  
Main Components

LaB6 emitters are becoming increasingly popular as direct replacements for tungsten filaments in the electron guns of modern electron-beam instruments. These emitters offer order of magnitude increases in beam brightness, and, with appropriate care in operation, a corresponding increase in source lifetime. They are, however, an order of magnitude more expensive, and may be easily damaged (by improper vacuum conditions and thermal shock) during saturation/desaturation operations. These operations typically require several minutes of an operator's attention, which becomes tedious and subject to error, particularly since the emitter must be cooled during sample exchanges to minimize damage from random vacuum excursions. We have designed a control system for LaBg emitters which relieves the operator of the necessity for manually controlling the emitter power, minimizes the danger of accidental improper operation, and makes the use of these emitters routine on multi-user instruments.Figure 1 is a block schematic of the main components of the control system, and Figure 2 shows the control box.

Analysis of Desorbed Gases from Oxygen-free Copper Stimulated by Irradiation with Single Pulsed Electron Beam

2012 ◽  
Vol 132 (11) ◽  
pp. 951-957
Author(s):  
Hiroki Kaneko ◽  
Yasushi Yamano ◽  
Shinichi Kobayashi ◽  
Yoshio Saito
Keyword(s):  
Electron Beam ◽  
Pulsed Electron Beam

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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