Infrared Optical Properties of Ion Implanted and Laser Annealed Silicon

1980 ◽  
Vol 1 ◽  
Author(s):  
Masanobu Miyao ◽  
Teruaki Motooka ◽  
Nobuyoshi Natsuaki ◽  
Takashi Tokuyama
Keyword(s):  
Optical Properties ◽  
Carrier Concentration ◽  
Laser Annealing ◽  
Electronic States ◽  
Free Carrier ◽  
High Dose ◽  
Carrier Relaxation ◽  
Carrier Effective Mass ◽  
Heavily Doped ◽  
Infrared Optical Properties

ABSTRACTElectronic states of extremely heavily doped n-type Si obtained by high dose ion implantation and laser annealing are investigated by measuring the infrared optical properties. Free carrier effective mass (m*) and carrier relaxation time (τ) are obtained as a function of carrier concentration (1019−5×1021 cm−3). Values of m* and τ increase and decrease, respectively, with the increase of carrier concentration. These results are discussed in relation to the occupation of electrons in a new valley of the conduction band.

Clustering Kinetics of Arsenic and Phosphorus in Laser Annealed Silicon

1985 ◽  
Vol 45 ◽  
Author(s):  
Josef Goetzlich
Keyword(s):  
Laser Annealing ◽  
Most Probable Number ◽  
High Dose ◽  
Second Phase ◽  
Probable Number ◽  
Relaxation Phase ◽  
Post Annealing ◽  
Residual Damage ◽  
Heavily Doped ◽  
Kinetics Of

ABSTRACTHigh-dose arsenic and phosphorus ion implanted silicon was annealed either by a CW CO2 or a pulsed Nd:YAG laser creating supersaturated dopant concentrations up to 3·1021 cm−3. The relaxation of these metastable electrically active atoms was investigated during thermal post-annealing at temperatures between 600 and 1000°C for times between 3 and 106 s. In heavily doped samples which contain residual damage after laser annealing, a very fast first relaxation phase is observed followed by a much slower second phase. In samples without residual damage only this second slower phase is seen. Carrier concentration profile measurements show that the saturation concentration after the relaxation depends only on temperature and corresponds to the concentration in thermal equilibrium. Using reaction kinetics a cluster model is proposed which demonstrates that in As doped layers the most probable number of As atoms in one cluster depends on temperature (4 As atoms at 700°C, 3 As atoms at 800 - 1000°C). In P doped layers the most probable clusters contain 3 P atoms at temperatures between 700 and 900°C.

Heavily-Doped n+-GaAs with Low Compensation Grown by Atmospheric OMVPE

1988 ◽  
Vol 144 ◽  
Author(s):  
R. Venkatasubramanian ◽  
S. K. Ghandhi
Keyword(s):  
Hall Effect ◽  
Carrier Concentration ◽  
Free Carrier ◽  
Donor And Acceptor ◽  
Heavily Doped ◽  
Quantitative Sims ◽  
Doping Range

ABSTRACTAtmospheric OMVPE has been used, with SiH4 as the dopant, to grow n+-GaAs with free-carrier levels upto about 9e18 cm−3. Following a steady rise in carrier concentration with dopant pressure, the carrier concentration is seen to fall rapidly with further doping. Hall-effect and quantitative SIMS data have been used to obtain the distribution of silicon onto donor and acceptor sites. It is seen that there is negligible compensation upto free-carrier levels of about 5e18 cm−3. The mechanism of compensation throughout the doping range is discussed.

Physical Properties of Silicon Doped Hetero-Epitaxial MOCVD Grown GaN: Influence of Doping Level and Stress

1999 ◽  
Vol 595 ◽  
Author(s):  
P.R. Hageman ◽  
V. Kirilyuk ◽  
A.R.A. Zauner ◽  
G.J. Bauhuis ◽  
P.K. Larsen
Keyword(s):  
Optical Properties ◽  
Physical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Doping Concentration ◽  
Free Carrier ◽  
Silicon Doping ◽  
Sapphire Substrates ◽  
Uv Emission ◽  
Silicon Doped

AbstractSilicon doped layers GaN were grown with MOCVD on sapphire substrates using silane as silicon precursor. The influence of the silicon doping concentration on the physical and optical properties is investigated. A linear relationship is found between the silane-input molfraction and the free carrier concentration in the GaN layers. The morphology of the samples is drastically changed at high silicon concentrations. Photoluminescence was used to probe bandgap variations as function of the silicon concentration. Increasing of the doping concentration led to a continuous shift of the exciton related PL to lower energies, while the intensity of the UV emission was found to increase up to a carrier concentration of n=2.5×1018 cm−3.

Optical Properties of Laser Induced Heavily Doped Silicon Layers

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Slaoui ◽  
E. Fogarassy ◽  
P. Siffert ◽  
J.F. Morhange ◽  
M. Balkanski
Keyword(s):  
Solid Solution ◽  
Optical Properties ◽  
Visible Light ◽  
Laser Annealing ◽  
Supersaturated Solid Solution ◽  
Raman Spectrometry ◽  
Silicon Lattice ◽  
Doped Silicon ◽  
Heavily Doped

ABSTRACTThe goal of this paper is to investigate optical properties of heavily doped silicon, performed by laser annealing of implanted layers.The optical properties were investigated by using U.V. and visible light (between 200 and 500 nm)reflectance and Raman spectrometry measurements. The experimental observations have been correlated with the contribution of the supersaturated solid solution of arsenic in the silicon lattice. Furthermore,the absorption coefficent of these layers has been deduced from ellipsometry measurements.

Photoluminescence and Bandgap Narrowing in Heavily Doped n-GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
H.D. Yao ◽  
A. Compaan
Keyword(s):  
Carrier Concentration ◽  
Conduction Band ◽  
Fermi Energy ◽  
Laser Annealing ◽  
Functional Form ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Bandgap Narrowing ◽  
Heavily Doped ◽  
Very High

AbstractExtremely heavily doped n-GaAs was produced by pulsed-laser annealing of Si implanted GaAs, achieving carrier concentrations exceeding 3.2×1019/cm3. Our photoluminescence (PL) spectra indicate a bandgap narrowing due to heavy n-type doping with a functional form of Δεg(eV) = - 6.3 × 10cm-8[(cm-2)]1/3 . At the highest carrier concentration, the bandgap shrinkage reaches -200 meV and the electron Fermi energy is -410 meV. These large values indicate that there exists a considerable conduction band “stretch” between the Γ and L-valley of GaAs for very high n-type concentrations.

Relaxation Behavior of Metastable As and P Concentrations in Si After Pulsed and CW Laser Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Goetzlich ◽  
P.H. Tsien ◽  
H. Ryssel
Keyword(s):  
Ion Implantation ◽  
Time Dependence ◽  
Carrier Concentration ◽  
Laser Irradiation ◽  
Solid Solutions ◽  
Laser Annealing ◽  
High Dose ◽  
Cw Laser ◽  
Different Temperatures ◽  
Removal Technique

ABSTRACTMetastable solid solutions of arsenic and phosphorus atoms were created by high-dose ion implantation in silicon, followed by annealing either with pulsed (Nd:YAG) or CW (CO2;) laser irradiation. The relaxation of these supersaturated layers was investigated by thermal post-treatment at temperatures between 600 and 1000°C. By measuring the time dependence of the sheet carrier concentration, the time constant and the activation energies for the relaxation of the electrically-active As and P atoms were investigated. In addition, the equilibrium carrier concentrations at different temperatures were obtained by Halleffect measurements in connection with a layer-removal technique.

OPTICAL PROPERTIES OF HEAVILY DOPED POLYACETYLENE FILMS

1983 ◽  
Vol 44 (C3) ◽  
pp. C3-345-C3-348
Author(s):  
O. Bernard ◽  
M. Palpacuer ◽  
C. Benoit ◽  
M. Rolland ◽  
M. J.M. Abadie
Keyword(s):  
Optical Properties ◽  
Heavily Doped

scholarly journals Restructured single parabolic band model for quick analysis in thermoelectricity

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Jianbo Zhu ◽  
Xuemei Zhang ◽  
Muchun Guo ◽  
Jingyu Li ◽  
Jinsuo Hu ◽  
...  
Keyword(s):  
Fermi Level ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Optimization Design ◽  
State Of The Art ◽  
Band Model ◽  
Carrier Effective Mass ◽  
Intermediate Variables ◽  
Level Calculation ◽  
Spb Model

AbstractThe single parabolic band (SPB) model has been widely used to preliminarily elucidate inherent transport behaviors of thermoelectric (TE) materials, such as their band structure and electronic thermal conductivity, etc. However, in the SPB calculation, it is necessary to determine some intermediate variables, such as Fermi level or the complex Fermi-Dirac integrals. In this work, we establish a direct carrier-concentration-dependent restructured SPB model, which eliminates Fermi-Dirac integrals and Fermi level calculation and emerges stronger visibility and usability in experiments. We have verified the reliability of such restructured model with 490 groups of experimental data from state-of-the-art TE materials and the relative error is less than 2%. Moreover, carrier effective mass, intrinsic carrier mobility and optimal carrier concentration of these materials are systematically investigated. We believe that our work can provide more convenience and accuracy for thermoelectric data analysis as well as instructive understanding on future optimization design.

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Free carrier absorption in heavily doped silicon layers

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped
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