Free carrier absorption in heavily doped silicon layers

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped

Band‐to‐band and free‐carrier absorption coefficients in heavily doped silicon at 4 K and at room temperature

1991 ◽  
Vol 69 (6) ◽  
pp. 3687-3690 ◽  
Author(s):  
S. C. Jain ◽  
A. Nathan ◽  
D. R. Briglio ◽  
D. J. Roulston ◽  
C. R. Selvakumar ◽  
...  
Keyword(s):  
Room Temperature ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Coefficients ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped

Near-infrared free carrier absorption enhancement of heavily doped silicon in all-dielectric metasurface

2020 ◽  
Vol 117 (13) ◽  
pp. 134101
Author(s):  
Honghao Yu ◽  
Qing Xiong ◽  
Hong Wang ◽  
Ye Zhang ◽  
Yi Wang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Free Carrier ◽  
Absorption Enhancement ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped ◽  
Dielectric Metasurface

scholarly journals Near-infrared free carrier absorption in heavily doped silicon

2014 ◽  
Vol 116 (6) ◽  
pp. 063106 ◽  
Author(s):  
Simeon C. Baker-Finch ◽  
Keith R. McIntosh ◽  
Di Yan ◽  
Kean Chern Fong ◽  
Teng C. Kho
Keyword(s):  
Near Infrared ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped

Parameterization of Free Carrier Absorption in Highly Doped Silicon for Solar Cells

2013 ◽  
Vol 60 (7) ◽  
pp. 2156-2163 ◽  
Author(s):  
Marc Rudiger ◽  
Johannes Greulich ◽  
Armin Richter ◽  
Martin Hermle
Keyword(s):  
Solar Cells ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption

SIMS Measurements of Oxygen in Heavily-Doped Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
R. J. Bleiler ◽  
R. S. Hockett ◽  
P. Chu ◽  
E. Strathman
Keyword(s):  
Integrated Circuit ◽  
Secondary Ion Mass Spectrometry ◽  
Signal To Noise Ratio ◽  
Free Carrier Absorption ◽  
Background Signal ◽  
Oxygen Precipitation ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped ◽  
Secondary Ion

ABSTRACTOxygen precipitation in CZ silicon is known to provide beneficial yield improvements in integrated circuit processing if the location and amount of precipitation can be properly controlled. The concentration of oxygen in the unprocessed silicon substrate is one of the most important variables to control for achieving these improvements. Fourier Transform Infrared Spectroscopy (FTIR) has successfully been used to measure [0] in silicon when the silicon resistivity is greater than about 0.1 Ω-cm. At lower resistivities typical of p+ and n+ substrates used for epi-wafers as free carrier absorption interferes with the FTIR measurement of bulk [0].This work will focus on how to quantitatively measure oxygen in heavily-doped silicon by Secondary Ion Mass Spectrometry (SIMS) with a high sample thruput, low background signal, and tight σ/x distribution. SIMS calibration is performed against FTIR-calibrated substrates with resistivity higher than 0.1Ωcm. Typical background signals as measured in FZ are a factor of 20 below signals in CZ, and the 160− signal in CZ is over 105 count/sec. resulting in an excellent signal-to-noise ratio for each single measurement. Typical thruput is 18 samples per day where each sample is analyzed four to five times to obtain a σ/x of 3% for an oxygen level of 15 ppma (ASTM F121−80).

4-QAM OFDM Data Switching via Free Carrier Absorption in Si-Rich SiC Waveguide

2021 ◽  
Vol 27 (3) ◽  
pp. 1-11
Author(s):  
Yen-Wei Hsueh ◽  
Chih-Hsien Cheng ◽  
Cai-Syuan Fu ◽  
Huai-Yung Wang ◽  
Bo-Ji Huang ◽  
...  
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Data Switching
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