Heavily-Doped n+-GaAs with Low Compensation Grown by Atmospheric OMVPE

1988 ◽  
Vol 144 ◽  
Author(s):  
R. Venkatasubramanian ◽  
S. K. Ghandhi
Keyword(s):  
Hall Effect ◽  
Carrier Concentration ◽  
Free Carrier ◽  
Donor And Acceptor ◽  
Heavily Doped ◽  
Quantitative Sims ◽  
Doping Range

ABSTRACTAtmospheric OMVPE has been used, with SiH4 as the dopant, to grow n+-GaAs with free-carrier levels upto about 9e18 cm−3. Following a steady rise in carrier concentration with dopant pressure, the carrier concentration is seen to fall rapidly with further doping. Hall-effect and quantitative SIMS data have been used to obtain the distribution of silicon onto donor and acceptor sites. It is seen that there is negligible compensation upto free-carrier levels of about 5e18 cm−3. The mechanism of compensation throughout the doping range is discussed.

Infrared Optical Properties of Ion Implanted and Laser Annealed Silicon

1980 ◽  
Vol 1 ◽  
Author(s):  
Masanobu Miyao ◽  
Teruaki Motooka ◽  
Nobuyoshi Natsuaki ◽  
Takashi Tokuyama
Keyword(s):  
Optical Properties ◽  
Carrier Concentration ◽  
Laser Annealing ◽  
Electronic States ◽  
Free Carrier ◽  
High Dose ◽  
Carrier Relaxation ◽  
Carrier Effective Mass ◽  
Heavily Doped ◽  
Infrared Optical Properties

ABSTRACTElectronic states of extremely heavily doped n-type Si obtained by high dose ion implantation and laser annealing are investigated by measuring the infrared optical properties. Free carrier effective mass (m*) and carrier relaxation time (τ) are obtained as a function of carrier concentration (1019−5×1021 cm−3). Values of m* and τ increase and decrease, respectively, with the increase of carrier concentration. These results are discussed in relation to the occupation of electrons in a new valley of the conduction band.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Free carrier absorption in heavily doped silicon layers

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped

Effect of free-carrier concentration on the phase transition and vibrational properties of VO2

2011 ◽  
Vol 99 (7) ◽  
pp. 071902 ◽  
Author(s):  
M. Nazari ◽  
Changhong Chen ◽  
A. A. Bernussi ◽  
Z. Y. Fan ◽  
M. Holtz
Keyword(s):  
Phase Transition ◽  
Carrier Concentration ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
Vibrational Properties

Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement

2020 ◽  
Vol 1004 ◽  
pp. 620-626
Author(s):  
Hironori Takeda ◽  
Mitsuru Sometani ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Hall Effect ◽  
Field Effect ◽  
Elevated Temperatures ◽  
Field Effect Transistors ◽  
Free Carrier ◽  
Oxide Semiconductor ◽  
Thermal Excitation ◽  
Temperature Dependent ◽  
Conduction Mechanisms ◽  
The Impact

Temperature-dependent Hall effect measurements were conducted to investigate the channel conduction mechanisms of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). This method allows us to discriminate the impact of the density of mobile (free) carriers in the inversion channels and their net mobility on the performance of SiC MOSFETs. It was found that, while the free carrier ratio of SiC MOSFETs with conventional gate oxides formed by dry oxidation is below 4% at 300 K, increasing the free carrier ratio due to thermal excitation of trapped electrons from SiO2/SiC interfaces leads to an unusual improvement in the field-effect mobility of SiC MOSFETs at elevated temperatures. Specifically, a significant increase in free carrier density surpasses the mobility degradation caused by phonon scattering for thermally grown SiO2/SiC interfaces. It was also found that, although nitrogen incorporation in SiO2/SiC interfaces increases the free carrier ratio typically up to around 30%, introduction of an additional scattering factor associated with interface nitridation compensates for the moderate amount of thermally generated mobile carriers at high temperatures, indicating a fundamental drawback of nitridation of SiO2/SiC interfaces. On the basis of these findings, we discuss the channel conduction mechanisms of SiC MOSFETs.

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