Preparation and Characterization of Rare Rarth Scandate Thin Films as an Alternative gate dielectric

2006 ◽  
Vol 917 ◽  
Author(s):  
Martin Wagner ◽  
T. Heeg ◽  
J. Schubert ◽  
St. Lenk ◽  
C. Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Gate Dielectric ◽  
Rutherford Backscattering Spectrometry ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
Equivalent Thickness ◽  
X Ray ◽  
Transmission Electron

AbstractRare earth scandate thin films (GdScO3 and DyScO3) were investigated with respect to future high-k applications. They were deposited on (100) silicon substrates using either pulsed laser deposition (PLD) or electron beam evaporation. The investigation of the films was done by means of Rutherford backscattering spectrometry, high-temperature X-ray-diffractometry, X-ray reflectometry, spectroscopic ellipsometry, transmission electron microscopy (TEM) and atomic force microscopy. For the electrical characterization capacitor stacks were prepared. Both materials show very promising characteristics independent from the deposition technique used. The films are stoichiometric and amorphous and exhibit a smooth surface (roughness RMS < 1 Å). The amorphous phase is stable up to 1000°C. The electrical characterization revealed featureless C-V-curves with a small hysteresis. From CET plots (CET = capacitance equivalent thickness) k-values between 20 and 23 could be extracted. The electron beam evaporation produces films with a better homogeneity and a thinner interfacial silicon dioxide and therefore a smaller CET value as confirmed by TEM. The leakage current density of the film with CET = 1.5 nm was as low as 7.7x10-4 A/cm2.

Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

1995 ◽  
Vol 10 (1) ◽  
pp. 26-33 ◽  
Author(s):  
L.M. Porter ◽  
R.F. Davis ◽  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Electron Beam Evaporation ◽  
Leakage Currents ◽  
X Ray ◽  
Transmission Electron

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

The Difference between Microstructures and Optical Properties of Pb1-xGexTe Thin Films Evaporated Using Electron Beam and Resistance Heating Respectively

2012 ◽  
Vol 538-541 ◽  
pp. 116-119
Author(s):  
Bin Li ◽  
Ping Xie ◽  
Su Ying Zhang ◽  
Ding Quan Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
Resistance Heating ◽  
X Ray ◽  
Germanium Telluride ◽  
Surface Topographies ◽  
The Difference

Lead germanium telluride (Pb1-xGexTe), a pseudo-binary alloy of IV-VI narrow gap semiconductors PbTe and GeTe, is considered a potential mechanically robust high-index coating material. Pb1-xGexTe thin films were evaporated on silicon substrates from the ingots of single crystals using electron beam and resistance heating, respectively. The surface topographies and compositions of thin-films were characterized by using scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX); the transmission spectra in a spectral range of 2.5~12 μm were also examined. Thin films demonstrated columnar microstructure; moreover, those evaporated using e-beam heating have much larger granular dimensions, in comparison with those using resistance heating. The measurement of transmittance reveals the advantage of perfect stoichiometry in e-beam evaporated thin films fails to improve optical properties. It can be deduced the scattering from the larger grains may impair the optical transparency. It can be concluded that electron beam evaporation is an optimum deposition choice.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

scholarly journals Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

2006 ◽  
Vol 88 (17) ◽  
pp. 172901 ◽  
Author(s):  
M. Wagner ◽  
T. Heeg ◽  
J. Schubert ◽  
St. Lenk ◽  
S. Mantl ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Gate Dielectric ◽  
Electron Beam Evaporation

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
W. Ng ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Film Stress ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Thick Substrate

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

Influence of the Microstructure on the Optical Characteristics of SrTiO3 thin films

2005 ◽  
Vol 20 (1) ◽  
pp. 68-74 ◽  
Author(s):  
M. Gaidi ◽  
L. Stafford ◽  
A. Amassian ◽  
M. Chaker ◽  
J. Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Characteristics ◽  
Silicon Substrates ◽  
Deposition Pressure ◽  
X Ray ◽  
Full Characterization

The influence of the microstructure of strontium-titanate-oxide (SrTiO3 or STO) thin films on their optical properties was investigated through an extensive characterization. The STO films have been deposited on silicon substrates by reactive pulsed laser deposition. The effect of the oxygen deposition pressure on the crystalline quality of the films was systematically studied by x-ray diffraction and scanning electron microscopy. Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry were used to determine the atomic density and depth concentration profiles of the various species forming the film. The refractive index and extinction coefficient were obtained using variable angle spectroscopic ellipsometry. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their microstructural properties. In particular, the refractive index increases with film density, while losses decrease. In addition, the interface between STO and Si is characterized by an interdiffusion layer. As the deposition pressure is enhanced, the width of this layer significantly increases, inducing localized inhomogeneity of the refractive index.

Characterization of Nd:Y3Al5O12 Thin Films Prepared by Electron Beam Evaporation Deposition

2013 ◽  
Vol 320 ◽  
pp. 150-154
Author(s):  
Hao Ren ◽  
Qun Zeng ◽  
Xi Hui Liang
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Morphologies ◽  
Ingaas Detector

Nd:YAG thin films have been prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer. The crystallization of Nd:YAG thin films was improved after annealing at 1100 °C for 1 hour in vacuum. Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of4F3/24I11/2of Nd3+in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

Ferroelectric behavior of pulsed laser deposited BaxSr1−xTiO3 thin films

1993 ◽  
Vol 8 (6) ◽  
pp. 1209-1212 ◽  
Author(s):  
Vivek Mehrotra ◽  
Simon Kaplan ◽  
Albert J. Sievers ◽  
Emmanuel P. Giannelis
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Visible Region ◽  
Pulsed Laser ◽  
Bulk Sample ◽  
X Ray Diffraction ◽  
X Ray ◽  
Capacitance Measurements ◽  
Transmission Electron

Ba0.75Sr0.25TiO3 thin films have been deposited on single-crystal MgO substrates by pulsed laser deposition with the objective of forming ferroelectric films with a low Curie temperature. The films have been characterized by capacitance measurements and by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry (random and channeled). Films deposited with the substrate at 500 °C are polycrystalline, while those deposited at 650 °C are highly aligned and possibly epitaxial. The films are transparent in the visible region with an optical absorption edge at about 300 nm. Capacitance measurements on the polycrystalline films reveal a Curie transition at 283 K. The lowering of Curie temperature from the corresponding bulk sample is attributed to the films being under compression, as verified by Raman spectroscopy.

scholarly journals Annealing effects on the properties of tin thin films

2015 ◽  
Vol 9 (2) ◽  
pp. 67-71 ◽  
Author(s):  
Maja Popovic ◽  
Mirjana Novakovic ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Rutherford Backscattering Spectrometry ◽  
Structural Parameters ◽  
Electrical Characterization ◽  
Vacuum Furnace ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Annealing Effects ◽  
Tin Thin Films

The structure, absorption coefficient and electrical resistivity studies on TiN thin films are presented. The film of thickness 240 nm was grown on Si (100) substrate by DC reactive sputtering at an average deposition rate of ~8 nm/min. After deposition the samples were annealed for 1h at 600?C and 2h at 700?C in nitrogen ambient and vacuum furnace, respectively. Structural characterizations were performed by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical properties were investigated by spectroscopic ellipsometry while a four point probe was used for electrical characterization. It was found that the post-deposition annealing of the films did not cause any variation in stoichiometry, but strongly affects the structural parameters such as lattice constant, micro-strain and grain size. The observed increase in the grain size after annealing leads to significantly lower value of the coefficient of absorption. These changes could be directly correlated with variation of electrical properties of TiN thin films.

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