scholarly journals Annealing effects on the properties of tin thin films

2015 ◽  
Vol 9 (2) ◽  
pp. 67-71 ◽  
Author(s):  
Maja Popovic ◽  
Mirjana Novakovic ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Rutherford Backscattering Spectrometry ◽  
Structural Parameters ◽  
Electrical Characterization ◽  
Vacuum Furnace ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Annealing Effects ◽  
Tin Thin Films

The structure, absorption coefficient and electrical resistivity studies on TiN thin films are presented. The film of thickness 240 nm was grown on Si (100) substrate by DC reactive sputtering at an average deposition rate of ~8 nm/min. After deposition the samples were annealed for 1h at 600?C and 2h at 700?C in nitrogen ambient and vacuum furnace, respectively. Structural characterizations were performed by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical properties were investigated by spectroscopic ellipsometry while a four point probe was used for electrical characterization. It was found that the post-deposition annealing of the films did not cause any variation in stoichiometry, but strongly affects the structural parameters such as lattice constant, micro-strain and grain size. The observed increase in the grain size after annealing leads to significantly lower value of the coefficient of absorption. These changes could be directly correlated with variation of electrical properties of TiN thin films.

DIRECT GROWTH OF EPITAXIAL La0.67Ca0.33MnO3 - δ THIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1611-1615 ◽  
Author(s):  
G. CAMPILLO ◽  
L. F. CASTRO ◽  
P. VIVAS ◽  
E. BACA ◽  
P. PRIETO ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Electrical Characterization ◽  
Annealing Treatment ◽  
Pure Oxygen ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Afm Analysis ◽  
Direct Growth

La 0.67 Ca 0.33 MnO 3 - δ thin films were deposited using a high-pressure dc-sputtering process. Pure oxygen at a pressure of 3.8 mbar was used as sputtering gas. The films were grown on (001) LaAlO 3 and (001) SrTiO 3 substrates at heater temperature of 850° without any annealing treatment. The formation of highly a-axis-oriented films with sharp interface with substrate surface is demonstrated by X-ray diffraction, transmission electron microscope (TEM), and atomic force microscope (AFM) analysis. Electrical characterization revealed a metal–insulator transition at T MI = 276 K, and magnetic characterization showed good magnetic properties with a PM–FM transition at TC ≈ 262 K.

Microstructural evolution of dense and porous pyroelectric Pb1−xCaxTiO3 thin films

1999 ◽  
Vol 14 (5) ◽  
pp. 2012-2022 ◽  
Author(s):  
Andreas Seifert ◽  
Laurent Sagalowicz ◽  
Paul Muralt ◽  
Nava Setter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Microstructural Evolution ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Porous Films ◽  
Transmission Electron ◽  
Ca Substitution ◽  
High Figure ◽  
Low Permittivity

Pb1−xCaxTiO3 thin films with x = 0−0.3 for pyroelectric applications were deposited on platinized silicon wafers by chemical solution processing. Ca-substitution for Pb in PbTiO3 results in a reduced c/a ratio of the unit cell, which, in turn, leads to better pyroelectric properties. Control of nucleation and growth during rapid thermal annealing to 650 °C allowed the formation of either highly porous or dense (111) oriented films. The inclusion of pores creates a matrix-void composite with the low permittivity desired for pyroelectric applications, resulting in a high figure of merit. The growth mechanisms for the microstructural evolution of both dense and porous films were analyzed by x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and Rutherford backscattering spectrometry and allowed establishment of microstructure/property relationships.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

TEM Study of FePt and FePt:C/FePt Composite Double-Layered Thin Films

2013 ◽  
Vol 275-277 ◽  
pp. 1952-1955
Author(s):  
Ling Fang Jin ◽  
Xing Zhong Li
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Magnetic Properties ◽  
Composite Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

New functional nanocomposite FePt:C thin films with FePt underlayers were synthesized by noneptaxial growth. The effect of the FePt layer on the ordering, orientation and magnetic properties of the composite layer has been investigated by adjusting FePt underlayer thickness from 2 nm to 14 nm. Transmission electron microscopy (TEM), together with x-ray diffraction (XRD), has been used to check the growth of the double-layered films and to study the microstructure, including the grain size, shape, orientation and distribution. XRD scans reveal that the orientation of the films was dependent on FePt underlayer thickness. In this paper, the TEM studies of both single-layered nonepitaxially grown FePt and FePt:C composite L10 phase and double-layered deposition FePt:C/FePt are presented.

PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure

2015 ◽  
Vol 821-823 ◽  
pp. 213-216
Author(s):  
S.M. Ryndya ◽  
N.I. Kargin ◽  
A.S. Gusev ◽  
E.P. Pavlova
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Selected Area Electron Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Influence Of Substrate ◽  
Composition Structure

Silicon carbide thin films were obtained on Si (100) and (111) substrates by means of vacuum laser ablation of α-SiC ceramic target. The influence of substrate temperature on composition, structure and surface morphology of experimental samples was examined using Rutherford backscattering spectrometry (RBS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM), atomic force microscopy (AFM), selected area electron diffraction (SAED) and X-ray diffraction (XRD) methods.

Nanostructured Silicon thin films Deposited by PECVD in the Presence of Silicon Nanoparticles

1997 ◽  
Vol 467 ◽  
Author(s):  
G. Viera ◽  
P. Roca i Cabarrocas ◽  
S. Hamma ◽  
S. N. Sharma ◽  
J. Costa ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nanoparticles ◽  
Film Growth ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Silicon Matrix ◽  
Silicon Thin Films ◽  
Nanostructured Silicon ◽  
Transmission Electron

ABSTRACTNanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 °C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1–2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

Preparation and Characterization of Rare Rarth Scandate Thin Films as an Alternative gate dielectric

2006 ◽  
Vol 917 ◽  
Author(s):  
Martin Wagner ◽  
T. Heeg ◽  
J. Schubert ◽  
St. Lenk ◽  
C. Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Gate Dielectric ◽  
Rutherford Backscattering Spectrometry ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
Equivalent Thickness ◽  
X Ray ◽  
Transmission Electron

AbstractRare earth scandate thin films (GdScO3 and DyScO3) were investigated with respect to future high-k applications. They were deposited on (100) silicon substrates using either pulsed laser deposition (PLD) or electron beam evaporation. The investigation of the films was done by means of Rutherford backscattering spectrometry, high-temperature X-ray-diffractometry, X-ray reflectometry, spectroscopic ellipsometry, transmission electron microscopy (TEM) and atomic force microscopy. For the electrical characterization capacitor stacks were prepared. Both materials show very promising characteristics independent from the deposition technique used. The films are stoichiometric and amorphous and exhibit a smooth surface (roughness RMS < 1 Å). The amorphous phase is stable up to 1000°C. The electrical characterization revealed featureless C-V-curves with a small hysteresis. From CET plots (CET = capacitance equivalent thickness) k-values between 20 and 23 could be extracted. The electron beam evaporation produces films with a better homogeneity and a thinner interfacial silicon dioxide and therefore a smaller CET value as confirmed by TEM. The leakage current density of the film with CET = 1.5 nm was as low as 7.7x10-4 A/cm2.

scholarly journals Magnetic and Electric Properties of AmorphousCo40Fe40B20Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Yuan-Tsung Chen ◽  
S. M. Xie
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Spin Exchange ◽  
Amorphous State ◽  
Magnetic Memory ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Grain Size Distributions ◽  
Diffraction Patterns ◽  
Plane View

C40Fe40B20was deposited on a glass substrate to a thickness (tf) of between 100 Å and 500 Å. X-ray diffraction patterns (XRD) indicate thatC40Fe40B20films are in an amorphous state. The plane-view microstructures and grain size distributions of CoFeB thin films are observed under a high-resolution transmission electron microscope (HRTEM). The thicker CoFeB films have larger grain size distribution than thinner CoFeB films. The saturation magnetization (Ms) exhibits a size effect, meaning thatMsincreases astfincreases. The magnetic remanence magnetization (Mr) of CoFeB thin films are sensitive to thinner CoFeB films, and the refined grain size of thinner CoFeB films can induce ferromagnetic stronger spin exchange-coupling behavior than thicker CoFeB films, resulting in higher remanence. The highest magnetic squareness ratio (Mr/Ms) of the CoFeB films occurs at thickness of 100 Å, suggesting the 100 Å of the as-deposited CoFeB film is suitable for magnetic memory application. These results also demonstrate that coercivity (Hc) is increased by an increase in the width of the distribution of grain sizes. The electrical resistivity (ρ) of such a film is typically higher than normally exceeding 100 μΩ cm, revealing that the amorphous phase dominates. These results are consistent with the XRD results.

Ferroelectric behavior of pulsed laser deposited BaxSr1−xTiO3 thin films

1993 ◽  
Vol 8 (6) ◽  
pp. 1209-1212 ◽  
Author(s):  
Vivek Mehrotra ◽  
Simon Kaplan ◽  
Albert J. Sievers ◽  
Emmanuel P. Giannelis
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Visible Region ◽  
Pulsed Laser ◽  
Bulk Sample ◽  
X Ray Diffraction ◽  
X Ray ◽  
Capacitance Measurements ◽  
Transmission Electron

Ba0.75Sr0.25TiO3 thin films have been deposited on single-crystal MgO substrates by pulsed laser deposition with the objective of forming ferroelectric films with a low Curie temperature. The films have been characterized by capacitance measurements and by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry (random and channeled). Films deposited with the substrate at 500 °C are polycrystalline, while those deposited at 650 °C are highly aligned and possibly epitaxial. The films are transparent in the visible region with an optical absorption edge at about 300 nm. Capacitance measurements on the polycrystalline films reveal a Curie transition at 283 K. The lowering of Curie temperature from the corresponding bulk sample is attributed to the films being under compression, as verified by Raman spectroscopy.

Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering

2014 ◽  
Vol 92 (7/8) ◽  
pp. 940-942 ◽  
Author(s):  
M.V. Pelegrini ◽  
M.A. Alvarado ◽  
M.I. Alayo ◽  
I. Pereyra
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rutherford Backscattering Spectrometry ◽  
Pure Aluminum ◽  
Gaseous Mixture ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Aluminum nitride (AlN) thin films were deposited by reactive radio frequency magnetron sputtering from pure aluminum target, onto Si (100), ultra dense flat carbon, and quartz. Series of samples were obtained varying the Ar and N2 gaseous mixture. The characterizations performed were Fourier transform infrared (FTIR), X-ray diffraction, high resolution transmission electron microscopy, visible optical absorption, Rutherford backscattering spectrometry, and residual stress measurements by Stoney’s equation. In this paper we report on the Ar/N2 ratio needed to produce preferential (002) AlN growth. Correlations between X-ray diffraction and FTIR are made for highly oriented (002) AlN films.

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