scholarly journals Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

2006 ◽  
Vol 88 (17) ◽  
pp. 172901 ◽  
Author(s):  
M. Wagner ◽  
T. Heeg ◽  
J. Schubert ◽  
St. Lenk ◽  
S. Mantl ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Gate Dielectric ◽  
Electron Beam Evaporation

Preparation and Characterization of Rare Rarth Scandate Thin Films as an Alternative gate dielectric

2006 ◽  
Vol 917 ◽  
Author(s):  
Martin Wagner ◽  
T. Heeg ◽  
J. Schubert ◽  
St. Lenk ◽  
C. Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Gate Dielectric ◽  
Rutherford Backscattering Spectrometry ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
Equivalent Thickness ◽  
X Ray ◽  
Transmission Electron

AbstractRare earth scandate thin films (GdScO3 and DyScO3) were investigated with respect to future high-k applications. They were deposited on (100) silicon substrates using either pulsed laser deposition (PLD) or electron beam evaporation. The investigation of the films was done by means of Rutherford backscattering spectrometry, high-temperature X-ray-diffractometry, X-ray reflectometry, spectroscopic ellipsometry, transmission electron microscopy (TEM) and atomic force microscopy. For the electrical characterization capacitor stacks were prepared. Both materials show very promising characteristics independent from the deposition technique used. The films are stoichiometric and amorphous and exhibit a smooth surface (roughness RMS < 1 Å). The amorphous phase is stable up to 1000°C. The electrical characterization revealed featureless C-V-curves with a small hysteresis. From CET plots (CET = capacitance equivalent thickness) k-values between 20 and 23 could be extracted. The electron beam evaporation produces films with a better homogeneity and a thinner interfacial silicon dioxide and therefore a smaller CET value as confirmed by TEM. The leakage current density of the film with CET = 1.5 nm was as low as 7.7x10-4 A/cm2.

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum

Si-co-doped CuAlS2 :Mn conductive phosphor thin films prepared by electron beam evaporation using phosphor powder pellets

2015 ◽  
Vol 12 (6) ◽  
pp. 793-796
Author(s):  
Hideki Kawaguchi ◽  
Tadashi Ishigaki ◽  
Takayoshi Adachi ◽  
Yuki Oshima ◽  
Koutoku Ohmi
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Phosphor Powder ◽  
Co Doped

scholarly journals CHARACTERISTICS OF LITHIUM LANTHANUM TITANATE THIN FILMS MADE BY ELECTRON BEAM EVAPORATION FROM NANOSTRUCTURED La0.67-xLi 3xTiO3 TARGET

2017 ◽  
Vol 25 (2) ◽  
pp. 243-250
Author(s):  
Nguyen Nang Dinh ◽  
Le Dinh Trong ◽  
Pham Duy Long
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ionic Conductivity ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Electron Beam Evaporation ◽  
Electrochromic Devices ◽  
Lanthanum Titanate ◽  
Average Size ◽  
Beam Deposition

Bulk nanostructured perovskites of La0.67-xLi3xTiO3 (LLTO) were prepared by using thermally ball-grinding from compounds of La2O3, Li2CO3 and TiO2. From XRD analysis, it was found that LTTO materials were crystallized with nano-size grains of an average size of 30 nm. The bulk ionic conductivity was found strongly dependent on the Li+ composition, the samples with x = 0.11 (corresponding to a La0.56Li0.33TiO3 compound) have the best ionic conductivity, which is ca. 3.2 x 10-3 S/cm at room temperature. The LLTO amorphous films were made by electron beam deposition. At room temperature the smooth films have ionic conductivity of 3.5 x 10-5  S/cm and transmittance of 80%. The optical bandgap of the films was found to be of 2.3 eV. The results have shown that the perovskite La0.56Li0.33TiO3  thin films can be used for a transparent solid electrolyte in ionic battery and in all-solid-state electrochromic devices, in particular.    

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