Influence of the Microstructure on the Optical Characteristics of SrTiO3 thin films

2005 ◽  
Vol 20 (1) ◽  
pp. 68-74 ◽  
Author(s):  
M. Gaidi ◽  
L. Stafford ◽  
A. Amassian ◽  
M. Chaker ◽  
J. Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Characteristics ◽  
Silicon Substrates ◽  
Deposition Pressure ◽  
X Ray ◽  
Full Characterization

The influence of the microstructure of strontium-titanate-oxide (SrTiO3 or STO) thin films on their optical properties was investigated through an extensive characterization. The STO films have been deposited on silicon substrates by reactive pulsed laser deposition. The effect of the oxygen deposition pressure on the crystalline quality of the films was systematically studied by x-ray diffraction and scanning electron microscopy. Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry were used to determine the atomic density and depth concentration profiles of the various species forming the film. The refractive index and extinction coefficient were obtained using variable angle spectroscopic ellipsometry. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their microstructural properties. In particular, the refractive index increases with film density, while losses decrease. In addition, the interface between STO and Si is characterized by an interdiffusion layer. As the deposition pressure is enhanced, the width of this layer significantly increases, inducing localized inhomogeneity of the refractive index.

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

Effects of Oxygen Partial Pressure on the Properties of SnOx Thin Films Doped with Indium

2021 ◽  
Vol 16 (5) ◽  
pp. 819-826
Author(s):  
Myeong Kyun Lyou ◽  
Hyunki Kim ◽  
SeoGwon Kim ◽  
Byung Seong Bae ◽  
Eui-Jung Yun
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Hall Effect ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Hall Effect Measurement ◽  
Amorphous Structure ◽  
X Ray ◽  
Hall Effect Measurements

This study examined the effects of the oxygen partial pressure on the properties of heavily indium-doped tin-oxide (In-SnOx) thin films grown at room temperature by reactive direct-current pulse sputtering from a mixed metallic target containing Sn (70 atomic %)-In (30 atomic %). X-ray photoelectron spectroscopy (XPS), dynamic secondary-ion mass spectrometry, X-ray diffraction (XRD), and Hall Effect measurements showed that the In-SnOx samples prepared with oxygen pressures of 10–20% had metallic properties. This was attributed to the notable Sn0 area ranges of 5.6–17.3%, low resistivity ranges of 5.5×10−3–2×10−4 Ωcm, and the high carrier concentration ranges of 3.5×1021–5.1×1022/cm3. On the other hand, the Sn4+ area and the resistivity increased significantly to 73.3% and 9.4 Ωcm. In comparison, the Sn2+ area and the electron concentration decreased dramatically to 23.6% and 6.5×1016/cm3, respectively, with increasing oxygen partial pressure up to 30%. The samples prepared with oxygen pressures higher than 20% exhibited nonmetallic properties with the dominant n-type SnO2 phase. This steep increase in the Sn4+ area was attributed to an increase in the oxygen contents in the samples, resulting in a decrease in the number of oxygen vacancy donors in the samples prepared with oxygen pressures higher than 20%. The decrease in the Sn2+ area was related to a decrease in the indium (In) contents in the samples, which also decreased the number of metal acceptors in the samples. XRD also showed that the metallic indium stannide (In0.2Sn0.8) and In–Sn–O(ITO) peaks coexisted for samples prepared with an oxygen pressure of 0–10%. In contrast, the samples prepared with oxygen pressures higher than 20% had an amorphous structure with SnO2 and SnO phases, supporting the XPS and Hall Effect measurement results.

Multi-Technique Characterization of WSix films

1994 ◽  
Vol 337 ◽  
Author(s):  
S.M. Baumann ◽  
C.J. Hitzman ◽  
I.C. Ivanov ◽  
AY. Craig ◽  
P.M. Lindley
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Barrier Properties ◽  
Oxide Thickness ◽  
Grain Structure ◽  
Elastic Recoil ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Surface And Interface

ABSTRACTWSix films are used extensively for contact, interconnect, and, in some cases, diffusion and Schottky barriers in semiconductor devices1. The electrical and barrier properties of these films are affected by a variety of factors, such as film stoichiometry, morphology, impurities, etc. This paper will address the capabilities and limitations of a variety of techniques which are frequently used to characterize WSix films. Techniques which were studied include: Dynamic and Static Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry and Elastic Recoil Detection (RBS/ERD), Auger Electron Spectroscopy (AES), Field Emission Scanning Electron Microscopy (FE-SEM), Total Reflection X-ray Fluorescence (TXRF), Atomic Force Microscopy (AFM), and X-Ray Photoelectron Spectroscopy (XPS). Film characteristics which were studied included surface morphology; grain structure; film stoichiometry; surface and interface oxide thickness and composition; and surface, bulk, and interface impurity concentrations including metallic, atmospheric, and dopant impurities. Cross correlation between the techniques was performed whenever possible in order to compare the relative accuracy of the techniques as well.

Preparation and Characterization of Rare Rarth Scandate Thin Films as an Alternative gate dielectric

2006 ◽  
Vol 917 ◽  
Author(s):  
Martin Wagner ◽  
T. Heeg ◽  
J. Schubert ◽  
St. Lenk ◽  
C. Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Gate Dielectric ◽  
Rutherford Backscattering Spectrometry ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
Equivalent Thickness ◽  
X Ray ◽  
Transmission Electron

AbstractRare earth scandate thin films (GdScO3 and DyScO3) were investigated with respect to future high-k applications. They were deposited on (100) silicon substrates using either pulsed laser deposition (PLD) or electron beam evaporation. The investigation of the films was done by means of Rutherford backscattering spectrometry, high-temperature X-ray-diffractometry, X-ray reflectometry, spectroscopic ellipsometry, transmission electron microscopy (TEM) and atomic force microscopy. For the electrical characterization capacitor stacks were prepared. Both materials show very promising characteristics independent from the deposition technique used. The films are stoichiometric and amorphous and exhibit a smooth surface (roughness RMS < 1 Å). The amorphous phase is stable up to 1000°C. The electrical characterization revealed featureless C-V-curves with a small hysteresis. From CET plots (CET = capacitance equivalent thickness) k-values between 20 and 23 could be extracted. The electron beam evaporation produces films with a better homogeneity and a thinner interfacial silicon dioxide and therefore a smaller CET value as confirmed by TEM. The leakage current density of the film with CET = 1.5 nm was as low as 7.7x10-4 A/cm2.

Hole Doping Through Indium Intercalation into Copper Phthalocyanine

2013 ◽  
Vol 802 ◽  
pp. 273-278 ◽  
Author(s):  
Anuchit Jaruvanawat ◽  
Pakorn Prajuabwan ◽  
Sunit Rojanasuwan ◽  
Annop Chanhom ◽  
Adirek Rangkasikorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Copper Phthalocyanine ◽  
High Vacuum ◽  
Hole Transport ◽  
Hole Doping ◽  
Silicon Substrates ◽  
X Ray ◽  
Evaporation Technique

A blend of molecular acceptor and molecular donor made of Copper Phthalocyanine (CuPc) and Indium in various ratios were evaporated in high vacuum on to intrinsic silicon substrates by using vacuum thermal co-evaporation technique. Electronic properties of In-doped CuPc thin films have been examined by X-ray photoelectron spectroscopy (XPS). The results obtained by XPS suggests that In-doped CuPc is a hole transport material.

Characterization of Conductive RuO2 Thin Film as Bottom electrodes for Ferroelectric Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
S. Bhaskar ◽  
P. S. Dobal ◽  
S. B. Majumder ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ferroelectric Properties ◽  
Ruthenium Oxide ◽  
Rutile Phase ◽  
Solution Chemistry ◽  
Silicon Substrates ◽  
Rutile Structure ◽  
X Ray ◽  
Si Substrates

AbstractRuthenium Oxide (RuO2) thin films were prepared on silicon substrates by solution chemistry technique. X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), micro-Raman, X-ray photoelectron spectroscopy (XPS), and four probe Van-der-paw technique were used for the film characterization. X-ray analysis shows a rutile structure in these films. The films annealed at 700°C showed lowest resistivity of 29 × 10−5 ohm-cm. The presence of Eg, A1g, and B2g modes is consistent with the Raman spectrum of rutile phase. These modes as well as additional unidentified band at about 477 cm−1 were investigated by temperature dependent Raman studies. Based on the result, band at 477 cm−1 that disappears above 370 K is attributed to hydrated RuO2 present in the films. XPS analysis show stoichiometric rutile RuO2 present in the films. Small concentrations of RuCl3, RuO3 and hydrated RuO2 were also detected. Pb0.9La0.15TiO3 (PLT15) thin films were deposited on RuO2/Si substrates and characterized for its ferroelectric properties to demonstrate that solution deposition technique offers an alternative approach for preparing high quality RuO2 bottom electrodes.

Sign in / Sign up

Export Citation Format

Share Document