Effects of Low Energy Carbon Ion Implantation on the Material Properties of InAs/GaAs Quantum Dots with Variation in Capping Layer

2015 ◽  
Vol 1743 ◽  
Author(s):  
S. Upadhyay ◽  
A Mandal ◽  
A. Basu ◽  
P. Singh ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Blue Shift ◽  
Low Energy ◽  
Stress Generation ◽  
Carbon Ions ◽  
Implantation Energy ◽  
Carbon Ion ◽  
Capping Layer ◽  
Pl Intensity

ABSTRACTUnder controlled irradiation of low energy carbon ions, photoluminescence (PL) study of InAs quantum dots prepared with different capping structures (GaAs and InAlGaAs) was carried out. Samples were investigated by varying implantation energy from 15 keV to 50 keV with fluence ranging between 3 × 1011ions/cm2 and 8 × 1011 ions/cm2. For fixed fluence of 4 × 1011ions/cm2, low temperature PL showed enhancement in a certain range of energy, along with a blue shift in the PL peak wavelength. In contrast, with varying fluence at fixed implantation energy of 50 keV, PL enhancement was not significant, rather a drop in PL intensity was noted at higher fluence from 5 × 1011 to 8 × 1011 ions/cm2. Moreover, carbon ion implantation caused a blue shift in the PL emission peak for both energy and fluence variations. PL intensity suppression was possibly caused by the formation of non-radiative recombination centers (NRCs) near the capping layer, while the corresponding blue shift might be attributed to stress generation in the capping layer due to implantation. As-grown and implanted InAlGaAs capped samples did not exhibit much variation in full width at half maxima of PL spectra; however, significant variation was observed for the GaAs capped sample. These results validate that InAlGaAs-capped QDs are more immune to ion implantation.

Enhancement of superconducting parameters of MgB2 by low energy carbon ion implantation

2019 ◽  
Vol 438 ◽  
pp. 42-47 ◽  
Author(s):  
Phaneendra Konduru ◽  
Awana Veer Pal Singh ◽  
Asokan Kandasami ◽  
Kanjilal Dinakar ◽  
S. Sreehari Sastry
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Carbon Ion ◽  
Superconducting Parameters

scholarly journals Full-color-emitting (CuInS2)ZnS-alloyed core/shell quantum dots with trimethoxysilyl end-capped ligands soluble in an ionic liquid

RSC Advances ◽  
2019 ◽  
Vol 9 (44) ◽  
pp. 25576-25582 ◽  
Author(s):  
Huiqing Wang ◽  
Jiayuan Hu ◽  
Min Zhu ◽  
Yucheng Li ◽  
Hao Qian ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ionic Liquid ◽  
Blue Shift ◽  
Core Shell ◽  
Full Color ◽  
Pl Intensity

ZCIS QDs were fabricated by varying ratio stock A to stock B. PL intensity enhanced and blue shift as shell layers increase. Emissions covering 800 nm to 518 nm tuned by compositions or shell layers. Ligand exchanged by MPtMS enable solubility in IL.

Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

2008 ◽  
Vol 103 (12) ◽  
pp. 124304 ◽  
Author(s):  
J. P. Zhao ◽  
D. X. Huang ◽  
Z. Y. Chen ◽  
W. K. Chu ◽  
B. Makarenkov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Low Energy ◽  
Ge Quantum Dots

Formation of graphitic and diamond-like carbon by low energy carbon ion implantation on c plane sapphire substrate

2018 ◽  
Vol 649 ◽  
pp. 12-16 ◽  
Author(s):  
S. Pradeep ◽  
S. Surender ◽  
K. Prabakaran ◽  
M. Jayasakthi ◽  
Shubra Singh ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sapphire Substrate ◽  
Low Energy ◽  
Diamond Like Carbon ◽  
Carbon Ion

Surface Modification of Silicon Nano Mechanical Structures by Carbon Ion Implantation for Post-fabrication Transformation to Silicon Carbide

2005 ◽  
Vol 908 ◽  
Author(s):  
Kumar R Virwani ◽  
Dinesh K Sood ◽  
Robert G Elliman ◽  
Ajay P Malshe
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Surface Modification ◽  
Chemical Composition ◽  
Ion Implantation ◽  
Bending Strength ◽  
Internal Stresses ◽  
Carbon Ions ◽  
Carbon Ion ◽  
Unique Ability

AbstractInternal stresses can cause de-lamination and fracture of coatings and structures and it is well known that ion-implantation can be used to control such behavior through modification of the stress. Here, however, we show that the unique ability of implantation to create controlled stresses in materials by altering both the chemical composition and mechanical properties, combined with an increase in the bending strength of materials, can used to create novel vertical nanostructures. Silicon cantilevers (beams), 193nm thick, 200nm wide and 3μm long, were implanted with carbon ions to create a buried SiCx layers. The internal stresses generated by implantation caused the beams to bend at angles ranging from 10 degrees to greater than 90 degrees, leading to unique vertical nanostructures. This method can be used to create 3-D nano electromechanical systems (NEMS).

Localized Silicon Nanocrystals Fabricated by Stencil Masked Low Energy Ion Implantation: Effect of the Stencil Aperture Size on the Implanted Dose

2009 ◽  
Vol 1160 ◽  
Author(s):  
Regis Diaz ◽  
Carine Dumas ◽  
Jeremie Grisolia ◽  
Thierry Ondarçuhu ◽  
Sylvie Schamm ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Cell Size ◽  
Silicon Oxide ◽  
Blue Shift ◽  
Low Energy ◽  
Silica Layer ◽  
Silicon Oxide Layer ◽  
Force Microscopy ◽  
Stencil Mask ◽  
Electrostatic Charging

AbstractIn this paper, we develop a new method based on ultra-low-energy ion implantation through a stencil mask to locally fabricate Si nanocrystals in an ultrathin silica layer. We perform a 1 keV Si implantation with doses of 5×1015 Si+/cm2, 7.5×1015 Si+/cm2 and 1×1016 Si+/cm2 in a 7 nm thick silicon oxide layer through stencil mask apertures ranging from 1μm up to 5 μm. After the mask removal the samples are furnace annealed at a temperature of 1050°C for 90 min under N2 atmosphere. The samples are then characterized by mapping the implanted and non-implanted areas by atomic force microscopy and photoluminescence spectroscopy. The intensity and the wavelength of the PL peak are found to depend on the implanted NCs cell size. A slight blue shift from 730 nm up to 720 nm is observed with decreasing cell size. Simultaneously, the PL intensity decreases and the signal vanishes for submicron features (which should contain 102 to 103 NCs). AFM microcopy performed on the implanted regions shows that the well-known oxide swelling usually observed after NCs synthesis decreases from 3.5 nm down to 0 as the cell size decreases. This result demonstrates that the effective implanted dose clearly decreases with the size of the cells. This effect is probably due to an electrostatic charging of the Si3N4 membrane despite the metallization treatments applied to the mask surface.

scholarly journals Effect of Low-Energy Nitrogen Ion Implantation on Friction and Wear Properties of Ion-Plated TiC Coating

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 775
Author(s):  
Zhongyu Dou ◽  
Yinglu Guo ◽  
Faguang Zhang ◽  
Dianxi Zhang
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Implantation Dose ◽  
Low Energy ◽  
Wear Properties ◽  
Implantation Energy ◽  
Nitrogen Ion Implantation ◽  
Friction Performance ◽  
Nitrogen Ion ◽  
Tribological Analysis

To further improve the performance of the coated tools, we investigated the effects of low-energy nitrogen ion implantation on surface structure and wear resistance for TiC coatings deposited by ion plating. In this experiment, an implantation energy of 40 keV and a dose of 2 × 1017 to 1 × 1018 (ions/cm2) were used to implant N ions into the TiC coatings. The results indicate that the surface roughness of the coating increases first and then decreases with the increase of ion implantation dose. After ion implantation, the surface of the coating will soften and reduce the hardness, and the production of TiN phase will gradually increase the hardness. Nitrogen ion implantation can reduce the friction coefficient of the TiC coating and improve the friction performance. In terms of wear resistance, the coating with an implant dose of 1×1018 ions/cm2 has the greatest improvement in wear resistance. Tribological analysis shows that the improvement in the performance of TiC coatings implanted with N ions is mainly due to the effect of the lubricating implanted layer. The implanted layer mainly exists in the form of amorphous TiC, TiN phase, and sp2C–C phase.

Electronmicroscopical Study of the Formation of Iron Carbide Phases After High-fluence Carbon Ion Implantation into Iron at Low Temperatures

1998 ◽  
Vol 13 (9) ◽  
pp. 2614-2622 ◽  
Author(s):  
C Hammerl ◽  
A. Königer ◽  
B. Rauschenbach
Keyword(s):  
Ion Implantation ◽  
Iron Carbide ◽  
Subsequent Annealing ◽  
High Fluence ◽  
Carbon Ions ◽  
Cross Sectional ◽  
Carbon Ion ◽  
Carbide Phases ◽  
Structure And Morphology ◽  
Transmission Electron

Carbon ions were implanted with energies between 50 and 150 keV into thin iron layers at temperatures of –10 °C and –70 °C. Formation of iron carbide phases was studied as a function of fluence, which was varied from 1.2 × 1017 C+-ions/cm2 up to 1.4 × 1018 C+-ions/cm2. The sequence of phase transformation during subsequent annealing to temperatures of up to 450 °C was also investigated. Detailed analysis of structure and morphology was done by cross-sectional transmission electron microscopy and electron diffraction experiments. The existence of metastable iron carbide phases, θ-Fe3C, Χ-Fe5C2, η-Fe2C, and also the amorphous phase Fe(C), after high-fluence carbon ion implantation and the transformation of the formed metastable phases by subsequent annealing into the θ-Fe3C phase are demonstrated.

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