Sn quantum dots embedded in SiO[sub 2] formed by low energy ion implantation

2007 ◽  
Vol 25 (3) ◽  
pp. 796 ◽  
Author(s):  
J. P. Zhao ◽  
Y. Meng ◽  
D. X. Huang ◽  
W. K. Chu ◽  
J. W. Rabalais
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Low Energy

Effects of Low Energy Carbon Ion Implantation on the Material Properties of InAs/GaAs Quantum Dots with Variation in Capping Layer

2015 ◽  
Vol 1743 ◽  
Author(s):  
S. Upadhyay ◽  
A Mandal ◽  
A. Basu ◽  
P. Singh ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Blue Shift ◽  
Low Energy ◽  
Stress Generation ◽  
Carbon Ions ◽  
Implantation Energy ◽  
Carbon Ion ◽  
Capping Layer ◽  
Pl Intensity

ABSTRACTUnder controlled irradiation of low energy carbon ions, photoluminescence (PL) study of InAs quantum dots prepared with different capping structures (GaAs and InAlGaAs) was carried out. Samples were investigated by varying implantation energy from 15 keV to 50 keV with fluence ranging between 3 × 1011ions/cm2 and 8 × 1011 ions/cm2. For fixed fluence of 4 × 1011ions/cm2, low temperature PL showed enhancement in a certain range of energy, along with a blue shift in the PL peak wavelength. In contrast, with varying fluence at fixed implantation energy of 50 keV, PL enhancement was not significant, rather a drop in PL intensity was noted at higher fluence from 5 × 1011 to 8 × 1011 ions/cm2. Moreover, carbon ion implantation caused a blue shift in the PL emission peak for both energy and fluence variations. PL intensity suppression was possibly caused by the formation of non-radiative recombination centers (NRCs) near the capping layer, while the corresponding blue shift might be attributed to stress generation in the capping layer due to implantation. As-grown and implanted InAlGaAs capped samples did not exhibit much variation in full width at half maxima of PL spectra; however, significant variation was observed for the GaAs capped sample. These results validate that InAlGaAs-capped QDs are more immune to ion implantation.

Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

2008 ◽  
Vol 103 (12) ◽  
pp. 124304 ◽  
Author(s):  
J. P. Zhao ◽  
D. X. Huang ◽  
Z. Y. Chen ◽  
W. K. Chu ◽  
B. Makarenkov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Low Energy ◽  
Ge Quantum Dots

Special Aspects of High-Intensity Low-Energy Ion Implantation

2021 ◽  
Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin
Keyword(s):  
Ion Implantation ◽  
High Intensity ◽  
Low Energy

scholarly journals Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Molecular Beam ◽  
Surface Passivation ◽  
Low Energy ◽  
Trioctylphosphine Oxide ◽  
Reverse Transfer ◽  
Semiconductor Heterostructure ◽  
Ligand Type

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

Big channeling effects at low-energy ion implantation in silicon

1986 ◽  
Vol 97 (2) ◽  
pp. K135-K139 ◽  
Author(s):  
J. Bollmann ◽  
H. Klose ◽  
A. Mertens
Keyword(s):  
Ion Implantation ◽  
Low Energy

Conducting polymer formed by low energy gold ion implantation

2008 ◽  
Vol 93 (7) ◽  
pp. 073102 ◽  
Author(s):  
M. C. Salvadori ◽  
M. Cattani ◽  
F. S. Teixeira ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Conducting Polymer ◽  
Low Energy ◽  
Gold Ion

scholarly journals Engineering of gentiopicroside-producing yeast strain using low-energy ion implantation mediated synthetic biology

2016 ◽  
Vol 30 (4) ◽  
pp. 805-812
Author(s):  
Ting Wang ◽  
Weidong Qian ◽  
Yunfang Fu ◽  
Changlong Cai ◽  
Peihong Mao
Keyword(s):  
Synthetic Biology ◽  
Ion Implantation ◽  
Yeast Strain ◽  
Low Energy
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