Growth, structure and properties of magnetron sputtered ultra-thin WTi films

2013 ◽  
Vol 1580 ◽  
Author(s):  
A. Le Priol ◽  
E. Le Bourhis ◽  
P.-O. Renault ◽  
L. Simonot ◽  
G. Abadias ◽  
...  
Keyword(s):  
Fiber Texture ◽  
Ex Situ ◽  
Structure And Properties ◽  
Working Pressure ◽  
Wafer Curvature ◽  
Size Dependent ◽  
Growth Structure ◽  
Refractory Metal Alloy ◽  
Ex Situ Xrd

ABSTRACTRefractory metal alloy WTi films were elaborated by magnetron sputtering from an alloyed target (W:Ti ∼ 70:30 at%). Film continuity threshold has been determined at 4.5 ± 0.2 nm using in situ surface differential reflectance (SDR) technique. Prior to film continuity, deposition of a continuous interfacial layer is suggested by both in situ and real-time SDR and wafer-curvature techniques. After continuity, WxTi1-x films (9.5 nm thick WTi films) have a body-centered structure with a {110} fiber texture. Composition (x) and microstructure can be tuned varying working pressure. A transition from compressive to tensile residual stresses was observed by ex situ XRD and wafer-curvature methods. Size dependent resistivity is obtained and slightly varies as a function of working pressure.

Size dependent behavior of Fe3O4crystals during electrochemical (de)lithiation: an in situ X-ray diffraction, ex situ X-ray absorption spectroscopy, transmission electron microscopy and theoretical investigation

2017 ◽  
Vol 19 (31) ◽  
pp. 20867-20880 ◽  
Author(s):  
David C. Bock ◽  
Christopher J. Pelliccione ◽  
Wei Zhang ◽  
Janis Timoshenko ◽  
K. W. Knehr ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Structural Changes ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Size Dependent ◽  
Transmission Electron ◽  
Dependent Behavior ◽  
X Ray Absorption

Crystal and atomic structural changes of Fe3O4upon electrochemical (de)lithiation were determined.

In Situ NMR, Ex Situ XRD and SEM Study of the Hydrothermal Crystallization of Nanoporous Aluminum Trimesates MIL-96, MIL-100, and MIL-110

2012 ◽  
Vol 24 (13) ◽  
pp. 2462-2471 ◽  
Author(s):  
Mohamed Haouas ◽  
Christophe Volkringer ◽  
Thierry Loiseau ◽  
Gérard Férey ◽  
Francis Taulelle
Keyword(s):  
Ex Situ ◽  
Hydrothermal Crystallization ◽  
Sem Study ◽  
In Situ Nmr ◽  
Ex Situ Xrd

Controlled Solubilization of Toluene by Silicate−Catanionic Surfactant Mesophases as Studied by in Situ and ex Situ XRD

Langmuir ◽  
2002 ◽  
Vol 18 (4) ◽  
pp. 1380-1385 ◽  
Author(s):  
Anna Lind ◽  
Jenny Andersson ◽  
Stefan Karlsson ◽  
Patrik Ågren ◽  
Patrick Bussian ◽  
...  
Keyword(s):  
Ex Situ ◽  
Catanionic Surfactant ◽  
Ex Situ Xrd

Matching in-situ and ex-situ recorded stress gradients in an AlxGa1−xN Heterostructure: Complementary wafer curvature analyses in time and space

2018 ◽  
Vol 147 ◽  
pp. 50-54 ◽  
Author(s):  
M. Reisinger ◽  
C. Ostermaier ◽  
M. Tomberger ◽  
J. Zechner ◽  
B. Sartory ◽  
...  
Keyword(s):  
Ex Situ ◽  
Time And Space ◽  
Wafer Curvature ◽  
Stress Gradients

Size-dependent Phase Transformations During Point Loading of Silicon

2000 ◽  
Vol 15 (8) ◽  
pp. 1754-1758 ◽  
Author(s):  
A. B. Mann ◽  
D. van Heerden ◽  
J. B. Pethica ◽  
T. P. Weihs
Keyword(s):  
Phase Transformations ◽  
Strong Dependence ◽  
The Body ◽  
Ex Situ ◽  
Stress Fields ◽  
Rhombohedral Structure ◽  
Size Dependent ◽  
Transmission Electron ◽  
Contact Size

Using a unique combination of in situ electrical and acoustical measurements and ex situ transmission electron microscopy, the phase transformations of silicon during point loading were shown to exhibit a strong dependence on the size of the deformed volume. For nanometer-size volumes of silicon, the final phase was the body centered cubic structure BC8, but for larger volumes it was amorphous. The size dependence was explained by considering how shear stress fields vary with contact size and how interfacial effects between the silicon substrate and the BC8 phase determine its stability. For both small and large contacts the presence of a nonmetallic phase (assumed to be the Rhombohedral structure R8) was observed.

scholarly journals In Situ and Real-Time Nanoscale Monitoring of Ultra-Thin Metal Film Growth Using Optical and Electrical Diagnostic Tools

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2225 ◽  
Author(s):  
Jonathan Colin ◽  
Andreas Jamnig ◽  
Clarisse Furgeaud ◽  
Anny Michel ◽  
Nikolaos Pliatsikas ◽  
...  
Keyword(s):  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Film Formation ◽  
Ex Situ ◽  
Diagnostic Tools ◽  
Growth Stages ◽  
Deposition Flux ◽  
Growth Monitoring ◽  
Wafer Curvature

Continued downscaling of functional layers for key enabling devices has prompted the development of characterization tools to probe and dynamically control thin film formation stages and ensure the desired film morphology and functionalities in terms of, e.g., layer surface smoothness or electrical properties. In this work, we review the combined use of in situ and real-time optical (wafer curvature, spectroscopic ellipsometry) and electrical probes for gaining insights into the early growth stages of magnetron-sputter-deposited films. Data are reported for a large variety of metals characterized by different atomic mobilities and interface reactivities. For fcc noble-metal films (Ag, Cu, Pd) exhibiting a pronounced three-dimensional growth on weakly-interacting substrates (SiO2, amorphous carbon (a-C)), wafer curvature, spectroscopic ellipsometry, and resistivity techniques are shown to be complementary in studying the morphological evolution of discontinuous layers, and determining the percolation threshold and the onset of continuous film formation. The influence of growth kinetics (in terms of intrinsic atomic mobility, substrate temperature, deposition rate, deposition flux temporal profile) and the effect of deposited energy (through changes in working pressure or bias voltage) on the various morphological transition thicknesses is critically examined. For bcc transition metals, like Fe and Mo deposited on a-Si, in situ and real-time growth monitoring data exhibit transient features at a critical layer thickness of ~2 nm, which is a fingerprint of an interface-mediated crystalline-to-amorphous phase transition, while such behavior is not observed for Ta films that crystallize into their metastable tetragonal β-Ta allotropic phase. The potential of optical and electrical diagnostic tools is also explored to reveal complex interfacial reactions and their effect on growth of Pd films on a-Si or a-Ge interlayers. For all case studies presented in the article, in situ data are complemented with and benchmarked against ex situ structural and morphological analyses.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

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