Pathway of Porous Silicon Formation Inside Si Nanowires Throughout Metal Assisted Etching

2012 ◽  
Vol 1408 ◽  
Author(s):  
Alexander A. Tonkikh ◽  
Nadine Geyer ◽  
Bodo Fuhrmann ◽  
Hartmut S. Leipner ◽  
Peter Werner
Keyword(s):  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Semiconductor Surface ◽  
Si Nanowires ◽  
Dissolution Reaction ◽  
Metal Assisted Chemical Etching ◽  
Hole Current ◽  
Selective Formation

ABSTRACTThe selective formation of porous silicon in nanowires is observed in Si/Ge epitaxial layers along Ge layers grown by molecular beam epitaxy on a Si(100) substrate after metal-assisted chemical etching in aqueous HF-H2O2 solution. We assume that Ge layers serve as channels for a hole current out of the semiconductor to sustain the dissolution reaction. The tunnelling of holes through the potential barrier at the semiconductor surface is assumed to be the dominating mechanism of the hole transfer to the electrolyte.

Ammonia detection using optical reflectance from porous silicon formed by metal-assisted chemical etching

2013 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentyn Smyntyna ◽  
Mykolai Pavlenko ◽  
Olga Kanevska ◽  
Yuliia Kirik ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Optical Reflectance ◽  
Ammonia Detection ◽  
Metal Assisted Chemical Etching

In Vitro Gene Delivery with Large Porous Silicon Nanoparticles Fabricated Using Cost-Effective, Metal-Assisted Chemical Etching

Small ◽  
2016 ◽  
Vol 13 (3) ◽  
pp. 1602739 ◽  
Author(s):  
Nancy Wareing ◽  
Kyle Szymanski ◽  
Giridhar R. Akkaraju ◽  
Armando Loni ◽  
Leigh T. Canham ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gene Delivery ◽  
Chemical Etching ◽  
Silicon Nanoparticles ◽  
Cost Effective ◽  
Porous Silicon Nanoparticles ◽  
Metal Assisted Chemical Etching

Improving the Quality of a Heteroepitaxial CaF2 Overlayer by Rapid Post Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
Loren Pfeiffer ◽  
Julia M. Phillips ◽  
T.P. Smith ◽  
W. M. Augustyniak ◽  
K. W. West
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Short Duration ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Dielectric Breakdown ◽  
Post Annealing ◽  
Random Direction

ABSTRACTWe show that post anneals of short duration at high temperature can markedly improve the quality of CaF2 films grown by molecular beam epitaxy (MBE) on Si (100). Anneals at 1100°C for 20 sec in an Ar ambient improved χmin, the ratio of backscattered 1.8 MeV He4 ions in the aligned to random direction, from as-grown values of .07 to .26, to post post-anneal values of .03 to .045. This is the best χmin yet reported for the CaF2:Si system. The post-annealed films also show improved resistance to chemical etching and mechanical stress, and increased dielectric breakdown voltages.

scholarly journals Study of Si Nanowires Produced by Metal-Assisted Chemical Etching as a Light-Trapping Material in n-type c-Si Solar Cells

ACS Omega ◽  
2018 ◽  
Vol 3 (9) ◽  
pp. 10898-10906 ◽  
Author(s):  
Ioannis Leontis ◽  
Martha A. Botzakaki ◽  
Stavroula N. Georga ◽  
A. Galiouna Nassiopoulou
Keyword(s):  
Solar Cells ◽  
Chemical Etching ◽  
Light Trapping ◽  
Si Nanowires ◽  
Si Solar Cells ◽  
Type C ◽  
Metal Assisted Chemical Etching

Growth of Germanium on Porous Silicon (001)

1996 ◽  
Vol 452 ◽  
Author(s):  
W. H. Thompson ◽  
Z. Yamani ◽  
H. M. Nayfeh ◽  
M.-A. Hasan ◽  
J. E. Greene ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Porous Si ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nm Range

AbstractThe surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.

Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy

2005 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Sinichiro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

Emission Wavelength Tuning of Porous Silicon with Ultra-Thin ZnO Capping Layers by Plasma-Assisted Molecular Beam Epitaxy

2014 ◽  
Vol 9 (1) ◽  
pp. 112-116
Author(s):  
Soaram Kim ◽  
Min Su Kim ◽  
Giwoong Nam ◽  
Hyunggil Park ◽  
Hyunsik Yoon ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wavelength Tuning ◽  
Emission Wavelength
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