Improving the Quality of a Heteroepitaxial CaF2 Overlayer by Rapid Post Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
Loren Pfeiffer ◽  
Julia M. Phillips ◽  
T.P. Smith ◽  
W. M. Augustyniak ◽  
K. W. West
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Short Duration ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Dielectric Breakdown ◽  
Post Annealing ◽  
Random Direction

ABSTRACTWe show that post anneals of short duration at high temperature can markedly improve the quality of CaF2 films grown by molecular beam epitaxy (MBE) on Si (100). Anneals at 1100°C for 20 sec in an Ar ambient improved χmin, the ratio of backscattered 1.8 MeV He4 ions in the aligned to random direction, from as-grown values of .07 to .26, to post post-anneal values of .03 to .045. This is the best χmin yet reported for the CaF2:Si system. The post-annealed films also show improved resistance to chemical etching and mechanical stress, and increased dielectric breakdown voltages.

Aspects of Crystal Quality of Si (100) Films Grown by Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
W. -X. Ni ◽  
A. Henry ◽  
J. O. Ekberg ◽  
G. V. Hansson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Radiant Heating ◽  
Resistive Heating ◽  
Good Crystal Quality ◽  
Resistively Heated

ABSTRACTSilicon layers grown by molecular beam epitaxy, using both direct resistive heating and indirect radiant heating of the substrate, have been evaluated by photoluminescence measurements, diode I-V characterization, and chemical etching tests. The results show that large densities of defects could be introduced when resistively heated substrates were experiencing thermo-mechanical stress. Films with good crystal quality were grown using a carefully designed radiant type heater.

High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN

2015 ◽  
Vol 15 (8) ◽  
pp. 4104-4109 ◽  
Author(s):  
Johannes K. Zettler ◽  
Christian Hauswald ◽  
Pierre Corfdir ◽  
Mattia Musolino ◽  
Lutz Geelhaar ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Material Quality ◽  
Gan Nanowires ◽  
Bulk Gan

Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers

2000 ◽  
Vol 39 (Part 2, No. 4B) ◽  
pp. L330-L333 ◽  
Author(s):  
Akihiko Kikuchi ◽  
Takayuki Yamada ◽  
Shinichi Nakamura ◽  
Kazuhide Kusakabe ◽  
Daisuke Sugihara ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Rf Plasma ◽  
Intermediate Layers

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

Nano Futures ◽  
2021 ◽  
Vol 5 (4) ◽  
pp. 045005
Author(s):  
Koichi Murata ◽  
Shuhei Yagi ◽  
Takashi Kanazawa ◽  
Satoshi Tsubomatsu ◽  
Christopher Kirkham ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Electric Transport ◽  
Photoluminescence Study ◽  
Post Annealing ◽  
Surface Nanostructures ◽  
Doping Technique ◽  
Dopant Source

Abstract Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ-doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.

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