Solvent-induced formation of unidirectionally curved and tilted Si nanowires during metal-assisted chemical etching

2013 ◽  
Vol 1 (2) ◽  
pp. 220-224 ◽  
Author(s):  
Yongkwan Kim ◽  
Angela Tsao ◽  
Dae Ho Lee ◽  
Roya Maboudian
Keyword(s):  
Chemical Etching ◽  
Si Nanowires ◽  
Metal Assisted Chemical Etching

scholarly journals Study of Si Nanowires Produced by Metal-Assisted Chemical Etching as a Light-Trapping Material in n-type c-Si Solar Cells

ACS Omega ◽  
2018 ◽  
Vol 3 (9) ◽  
pp. 10898-10906 ◽  
Author(s):  
Ioannis Leontis ◽  
Martha A. Botzakaki ◽  
Stavroula N. Georga ◽  
A. Galiouna Nassiopoulou
Keyword(s):  
Solar Cells ◽  
Chemical Etching ◽  
Light Trapping ◽  
Si Nanowires ◽  
Si Solar Cells ◽  
Type C ◽  
Metal Assisted Chemical Etching

Pathway of Porous Silicon Formation Inside Si Nanowires Throughout Metal Assisted Etching

2012 ◽  
Vol 1408 ◽  
Author(s):  
Alexander A. Tonkikh ◽  
Nadine Geyer ◽  
Bodo Fuhrmann ◽  
Hartmut S. Leipner ◽  
Peter Werner
Keyword(s):  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Semiconductor Surface ◽  
Si Nanowires ◽  
Dissolution Reaction ◽  
Metal Assisted Chemical Etching ◽  
Hole Current ◽  
Selective Formation

ABSTRACTThe selective formation of porous silicon in nanowires is observed in Si/Ge epitaxial layers along Ge layers grown by molecular beam epitaxy on a Si(100) substrate after metal-assisted chemical etching in aqueous HF-H2O2 solution. We assume that Ge layers serve as channels for a hole current out of the semiconductor to sustain the dissolution reaction. The tunnelling of holes through the potential barrier at the semiconductor surface is assumed to be the dominating mechanism of the hole transfer to the electrolyte.

A systematic study of silicon nanowires array fabricated through metal-assisted chemical etching

2020 ◽  
Vol 92 (3) ◽  
pp. 30402
Author(s):  
Shiying Zhang ◽  
Zhenhua Li ◽  
Qingjun Xu
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Optimal Solution ◽  
Solution Concentration ◽  
Etching Time ◽  
Si Nanowires ◽  
Selected Area Electron Diffraction ◽  
Initial Silicon ◽  
Metal Assisted Chemical Etching

Aligned and uniform silicon nanowires (SiNWs) arrays were fabricated with good controllability and reproducibility by metal-assisted chemical etching in aqueous AgNO3/HF etching solutions in atmosphere. The SiNWs formed on silicon were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The results show that the as-prepared SiNWs are perfectly single crystals and the axial orientation of the Si nanowires is identified to be parallel to the [111] direction, which is identical to the initial silicon wafer. In addition, a series of experiments were conducted to study the effects of etching conditions such as solution concentration, etching time, and etching temperature on SiNWs. And the optimal solution concentrations for SiNWs have been identified. The formation mechanism of silicon nanowires and silver dendrites were also discussed.

scholarly journals Correction to: Facile morphology control of high aspect ratio patterned Si nanowires by metal-assisted chemical etching

2018 ◽  
Vol 29 (21) ◽  
pp. 18178-18178 ◽  
Author(s):  
Indrajit V. Bagal ◽  
Muhammad Ali Johar ◽  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Sang-Wan Ryu
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Morphology Control ◽  
Si Nanowires ◽  
Metal Assisted Chemical Etching

Needles and Haystacks: Influence of Catalytic Metal Nanoparticles on Structural and Vibrational Properties and Morphology of Silicon Nanowires Synthesized by Metal-Assisted Chemical Etching

2013 ◽  
Vol 1551 ◽  
pp. 101-110
Author(s):  
M. K. Dawood ◽  
S. Tripathy ◽  
S. B. Dolmanan ◽  
T. H. Ng ◽  
T. Hao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Metal Nanoparticles ◽  
Chemical Etching ◽  
Near Infrared ◽  
Metal Catalyst ◽  
Vibrational Properties ◽  
Si Nanowires ◽  
Wide Range ◽  
Metal Assisted Chemical Etching ◽  
Si Nanostructures

ABSTRACTMetal-assisted chemical etching (MACE) of silicon (Si) is a simple and low-cost process to fabricate Si nanostructures with varying aspect ratio and properties. In this work, we report on the structural and vibrational properties of Si nanostructures synthesized with varying metal catalyst. The morphology of the synthesized nanowires was characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The optical and vibrational properties of the Si nanostructures were studied by photoluminescence and Raman spectroscopy using three different excitation sources (UV, visible and near-infrared) and are correlated to their microstructures. We propose that the excessive injection of holes into Si at the metal-Si interface and its diffusion to the nanowire surfaces facilitate the etching of Si on these surfaces, leading to a mesoporous network of Si nanocrystallites. When etched with catalytic Au nanoparticles, “hay-stacked” mesoporous Si nanowires were obtained. The straighter nanowires etched with Ag nanoparticles, consisted of a single crystalline core with a thin porous layer that decreased in thickness towards the base of the nanowire. This difference is due to the higher catalytic activity of Au compared to Ag for H2O2 decomposition. The SERRS observed during UV and visible Raman with Ag-etched Si nanowires and near-infrared Raman with Au-etched Si nanowires is due to the presence of the sunken metal nanoparticles. In addition, we explored the influence of varying H2O2 and HF concentration as well as the influence of increased etching temperature on the resultant nanostructured Si morphology. Such Si nanostructures may be useful for a wide range of applications such as photovoltaic and biological and chemical sensing.

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