Ammonia detection using optical reflectance from porous silicon formed by metal-assisted chemical etching

2013 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentyn Smyntyna ◽  
Mykolai Pavlenko ◽  
Olga Kanevska ◽  
Yuliia Kirik ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Optical Reflectance ◽  
Ammonia Detection ◽  
Metal Assisted Chemical Etching

In Vitro Gene Delivery with Large Porous Silicon Nanoparticles Fabricated Using Cost-Effective, Metal-Assisted Chemical Etching

Small ◽  
2016 ◽  
Vol 13 (3) ◽  
pp. 1602739 ◽  
Author(s):  
Nancy Wareing ◽  
Kyle Szymanski ◽  
Giridhar R. Akkaraju ◽  
Armando Loni ◽  
Leigh T. Canham ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gene Delivery ◽  
Chemical Etching ◽  
Silicon Nanoparticles ◽  
Cost Effective ◽  
Porous Silicon Nanoparticles ◽  
Metal Assisted Chemical Etching

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

Pathway of Porous Silicon Formation Inside Si Nanowires Throughout Metal Assisted Etching

2012 ◽  
Vol 1408 ◽  
Author(s):  
Alexander A. Tonkikh ◽  
Nadine Geyer ◽  
Bodo Fuhrmann ◽  
Hartmut S. Leipner ◽  
Peter Werner
Keyword(s):  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Semiconductor Surface ◽  
Si Nanowires ◽  
Dissolution Reaction ◽  
Metal Assisted Chemical Etching ◽  
Hole Current ◽  
Selective Formation

ABSTRACTThe selective formation of porous silicon in nanowires is observed in Si/Ge epitaxial layers along Ge layers grown by molecular beam epitaxy on a Si(100) substrate after metal-assisted chemical etching in aqueous HF-H2O2 solution. We assume that Ge layers serve as channels for a hole current out of the semiconductor to sustain the dissolution reaction. The tunnelling of holes through the potential barrier at the semiconductor surface is assumed to be the dominating mechanism of the hole transfer to the electrolyte.

scholarly journals Porous Silicon Formation by Metal-Assisted Chemical Etching

2009 ◽  
Vol 116 (Supplement) ◽  
pp. S-117-S-119 ◽  
Author(s):  
M. Lipinski ◽  
J. Cichoszewski ◽  
R.P. Socha ◽  
T. Piotrowski
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Metal Assisted Chemical Etching

Metal-Assisted Chemical Etching of Multicrystalline Silicon in HF/ Na2S2O8 Produces Porous Silicon

2005 ◽  
Vol 480-481 ◽  
pp. 139-144 ◽  
Author(s):  
T. Hadjersi ◽  
N. Gabouze ◽  
A. Ababou ◽  
M. Boumaour ◽  
W. Chergui ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Multicrystalline Silicon ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
External Bias ◽  
Etching Method ◽  
Metal Assisted Chemical Etching

A new metal-assisted chemical etching method using Na2S2O8 as an oxidant is proposed to form a porous layer on a multicrystalline silicon (mc-Si). This method does not need an external bias and enables formation of uniform porous silicon layers, more rapidly than the conventional stain etching method. A thin layer of Pd is deposited on the mc-Si surface prior to immersion in a solution of HF and Na2S2O8. The characterisations of etched layer formed by this method as a function of etching time were investigated by scanning electron microscopy, X-ray diffraction (XRD), Energy-dispersive X-ray (EDX) and reflectance spectroscopy. It shows that the surface is porous and the etching is independent of grain orientation. In addition, reflectance measurements made with a variety of etching conditions show a lowering of the reflectance from 25 % to 6 % measured with respect to the bare as-cut substrate. However, this result can be improved by changing the experimental conditions (concentration, time, temperature, …).

Porous silicon antireflection layer for solar cells using metal-assisted chemical etching

2008 ◽  
Vol 205 (7) ◽  
pp. 1724-1728 ◽  
Author(s):  
Rachid Chaoui ◽  
Bedra Mahmoudi ◽  
Yasmina Si Ahmed
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Chemical Etching ◽  
Metal Assisted Chemical Etching

Metal-assisted chemical etching in HF/Na2S2O8 OR HF/KMnO4 produces porous silicon

2004 ◽  
Vol 459 (1-2) ◽  
pp. 271-275 ◽  
Author(s):  
T Hadjersi ◽  
N Gabouze ◽  
E.S Kooij ◽  
A Zinine ◽  
A Ababou ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Metal Assisted Chemical Etching
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